Patents by Inventor Patrick Rush Webb
Patrick Rush Webb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6901653Abstract: A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.Type: GrantFiled: April 2, 2002Date of Patent: June 7, 2005Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Richard Hsiao, Prakash Kasiraj, Quang Le, Paul Phong Nguyen, Son Van Nguyen, Denny D. Tang, Patrick Rush Webb
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Patent number: 6878240Abstract: A sputtering system is provided with a substrate and a sputtering material layer that are located in a sputtering chamber. The sputtering material layer has a sputtering surface where atoms of the material are sputtered and the substrate has a forming surface with a site where atoms of the sputtered material are to be formed. The sputtering material layer has a sputtering center which is located at a center of the atoms to be sputtered and the aforementioned site has a periphery with a forming center at a center of the periphery. The sputtering center is offset from the forming center so that shadowing at outer extremities of photoresist masks near the periphery of the substrate is minimized.Type: GrantFiled: June 28, 2002Date of Patent: April 12, 2005Assignee: International Business Machines CorporationInventors: Raymond Bus-Kwofie, James Mac Freitag, Lichiao Metin, Mustafa Pinarbasi, Patrick Rush Webb, Serhat Metin
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Patent number: 6862798Abstract: A method of making a magnetic head assembly wherein the magnetic head assembly has a write head with a pole tip includes the steps of forming a shaping layer on an underlying layer wherein the shaping layer has a side surface and a top surface, ion beam sputter depositing a ferromagnetic material layer on the underlying layer and on the side and top surfaces of the shaping layer and removing first and second portions of the ferromagnetic material layer from the underlying layer and the top surface of the shaping layer, respectively, leaving a remaining portion of the ferromagnetic material layer on the side surface of the shaping layer which is the aforementioned pole tip.Type: GrantFiled: January 18, 2002Date of Patent: March 8, 2005Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: James Bernard Kruger, Benjamin Lu chen Wang, Patrick Rush Webb, Howard Gordon Zolla
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Publication number: 20040257701Abstract: A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure.Type: ApplicationFiled: June 23, 2003Publication date: December 23, 2004Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES, INC.Inventors: Daniel Wayne Bedell, Richard Hsiao, James D. Jarratt, Patrick Rush Webb, Sue Siyang Zhang
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Patent number: 6804879Abstract: A method for producing a magnetic transducer with a inductive write head having a multilayer coil with a high aspect ratio and a short yoke is provided. A damascene process is used for two coil layers and a conventional process for the third coil layer. The process of the invention allows a seed layer for the coil to be deposited on the side walls of the trenches for the first and second coil layers. In one embodiment the seed layer for the coil is preceded by an adhesion layer.Type: GrantFiled: October 23, 2002Date of Patent: October 19, 2004Assignee: Hitachi Global Storage Technologies Netherlands, B.V.Inventors: Richard D. Hsiao, Quang Le, Edward Hin Pong Lee, Paul Phong Nguyen, Son Van Nguyen, Denny D. Tang, Bradley Douglas Webb, Patrick Rush Webb, Samuel Wei-san Yuan
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Publication number: 20040190196Abstract: Applicants disclose a method for producing a magnetic transducer with a inductive write head having a multilayer coil with a high aspect ratio and a short yoke. A damascene process is used for two coil layers and a conventional process for the third coil layer. The process of the invention allows a seed layer for the coil to be deposited on the side walls of the trenches for the first and second coil layers. In one embodiment the seed layer for the coil is preceded by an adhesion layer.Type: ApplicationFiled: March 29, 2004Publication date: September 30, 2004Inventors: Richard D. Hsiao, Quang Le, Edward Hin Pong Lee, Paul Phong Nguyen, Son Van Nguyen, Denny D. Tang, Bradley Douglas Webb, Patrick Rush Webb, Samuel Wei-san Yuan
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Publication number: 20040179312Abstract: A magnetoresistive sensor having bias stabilization tabs includes a protective cap layer. The protective cap layer prevents oxidation, avoids potential damage from using ion milling for oxidation removal, and lowers parasitic resistance. A disk drive is provided with the magnetoresistive sensor including a protective cap layer.Type: ApplicationFiled: March 13, 2003Publication date: September 16, 2004Inventors: James Mac Freitag, Mustafa Michael Pinarbasi, Patrick Rush Webb
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Publication number: 20040177493Abstract: A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.Type: ApplicationFiled: March 31, 2004Publication date: September 16, 2004Inventors: Richard Hsiao, Prakash Kasiraj, Quang Le, Paul Phong Nguyen, Son Van Nguyen, Denny D. Tang, Patrick Rush Webb
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Patent number: 6785101Abstract: The first and second side surfaces of either a bottom spin valve sensor or a top spin valve sensor are notched so as to enable a reduction in the magnetoresistive coefficient of side portions of the sensor beyond the track width region thereby minimizing side reading by the sensor. The first and second notches of the spin valve sensor are then filled with layers in various embodiments of the invention to complete the spin valve sensor.Type: GrantFiled: July 12, 2001Date of Patent: August 31, 2004Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Patrick Rush Webb, Mustafa Pinarbasi, Richard Hsiao, Hardayal Singh Gill
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Patent number: 6744607Abstract: A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve sensor has first and second wing portions which extend laterally beyond a track width of the spin valve sensor and are exchange coupled to first and second AFM pinning layers. Magnetic moments of the wing portions of the free layer are pinned parallel to the ABS and parallel to major planes of the layers of the sensor for magnetically stabilizing the central portion of the free layer which is located within the track width. The spin valve sensor has a central portion that extends between the first and second AFM layers. First and second lead layers overlay the first and second AFM layers and further overlay first and second portions of the central portion so that a distance between the first and second lead layers defines a track width that is less than a distance between the first and second AFM layers.Type: GrantFiled: March 21, 2002Date of Patent: June 1, 2004Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: James Mac Freitag, Mustafa Pinarbasi, Patrick Rush Webb
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Publication number: 20040080866Abstract: Applicants disclose a method for producing a magnetic transducer with a inductive write head having a multilayer coil with a high aspect ratio and a short yoke. A damascene process is used for two coil layers and a conventional process for the third coil layer. The process of the invention allows a seed layer for the coil to be deposited on the side walls of the trenches for the first and second coil layers. In one embodiment the seed layer for the coil is preceded by an adhesion layer.Type: ApplicationFiled: October 23, 2002Publication date: April 29, 2004Inventors: Richard D. Hsiao, Quang Le, Edward Hin Pong Lee, Paul Phong Nguyen, Son Van Nguyen, Denny D. Tang, Bradley Douglas Webb, Patrick Rush Webb, Samuel Wei-san Yuan
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Publication number: 20040075938Abstract: A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.Type: ApplicationFiled: November 19, 2003Publication date: April 22, 2004Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIESInventors: Richard Hsiao, Prakash Kasiraj, Quang Le, Paul Phong Nguyen, Son Van Nguyen, Denny D. Tang, Patrick Rush Webb
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Publication number: 20040027718Abstract: The electroplated components of a magnetic head of the present invention are fabricated utilizing a seed layer that is susceptible to reactive ion etch removal techniques. A preferred seed layer is comprised of tungsten or titanium. Following the electroplating of the components utilizing a fluorine species reactive ion etch process the seed layer is removed, and significantly, the fluorine RIE process creates a gaseous tungsten or titanium fluoride compound removal product. The problem of seed layer redeposition along the sides of the electroplated components is overcome because the gaseous fluoride compound is not redeposited. The present invention also includes an enhanced two part seed layer, where the lower part is tungsten, titanium or tantalum and the upper part is composed of the material that constitutes the component to be electroplated.Type: ApplicationFiled: August 1, 2003Publication date: February 12, 2004Inventors: Richard Hsiao, Neil Leslie Robertson, Patrick Rush Webb
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Publication number: 20040000477Abstract: A sputtering system is provided with a substrate and a sputtering material layer that are located in a sputtering chamber. The sputtering material layer has a sputtering surface where atoms of the material are sputtered and the substrate has a forming surface with a site where atoms of the sputtered material are to be formed. The sputtering material layer has a sputtering center which is located at a center of the atoms to be sputtered and the aforementioned site has a periphery with a forming center at a center of the periphery. The sputtering center is offset from the forming center so that shadowing at outer extremities of photoresist masks near the periphery of the substrate is minimized.Type: ApplicationFiled: June 28, 2002Publication date: January 1, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Raymond Bus-Kwofie, James Mac Freitag, Serhat Metin, Mustafa Pinarbasi, Patrick Rush Webb
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Publication number: 20030214761Abstract: A lead overlay magnetic sensor for use in a disk drive is provided having a protective cap layer disposed between the electrical leads and the sensor. The protective cap layer is preferably formed from ruthenium, rhodium, or other suitable material. The sensors thus formed have low resistance between the electrical leads and the sensor and also have well defined magnetic trackwidths.Type: ApplicationFiled: May 16, 2002Publication date: November 20, 2003Inventors: James Mac Freitag, Mustafa Pinarbasi, Patrick Rush Webb
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Publication number: 20030203645Abstract: A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered antireflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/Al2O3, Ta/SiO2, Ta/TiO2, Ta/Ta2O5, Ta/Cr2O3, Ta/Si3N4, Ti/Al2O3, Ti/SiO2, Ti/TiO2, Ti/Ta2O5, Ti/Cr2O3, Ti/Si3N4, Cr/Al2O3, Cr/SiO2, Cr/TiO2, Cr/Ta2O5, Cr/Cr2O3, Cr/Si3N4, Al/Al2O3, Al/TiO2, Al/Ta2O5, Al/Cr2O3, Al/Si3N4, Ni/Al2O3, Ni/SiO2, Ni/TiO2, Ni/Ta2O5, Ni/Cr2O3, Ni/Si3N4, Ir/Al2O3, Ir/SiO2, Ir/TiO2, Ir/Ta2O5, Ir/Cr2O3, and Ir/Si3N4. At least the absorption and dielectric layers can be formed using vacuum deposition.Type: ApplicationFiled: April 30, 2002Publication date: October 30, 2003Applicant: International Business Machines CorporationInventors: James Bernard Kruger, Clinton David Snyder, Patrick Rush Webb, Howard Gordon Zolla
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Publication number: 20030184912Abstract: A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.Type: ApplicationFiled: April 2, 2002Publication date: October 2, 2003Applicant: INTERNATIONAL BUSINESS MACHINESInventors: Richard Hsiao, Prakash Kasiraj, Quang Le, Paul Phong Nguyen, Son Van Nguyen, Denny D. Tang, Patrick Rush Webb
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Publication number: 20030182790Abstract: Methods of making a read head with improved contiguous junctions are described. After sensor layer materials are deposited over a substrate, a lift-off mask is formed over the sensor layer materials in a central region which is surrounded by end regions. Ion milling is performed with use of the lift-off mask such that the sensor layer materials in the end regions are removed and those in the central region remain to form a read sensor. A high-angle ion mill (e.g. between 45-80 degrees) is then performed to remove redeposited material from side walls of the lift-off mask Next, a reactive ion etch (RIE) is used to reduce the thickness and the width of the lift-off mask and to remove capping layer materials from the top edges of the read sensor.Type: ApplicationFiled: March 28, 2002Publication date: October 2, 2003Inventors: Richard Hsiao, Wipul Pemsiri Jayasekara, Mustafa Pinarbasi, Patrick Rush Webb
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Publication number: 20030179507Abstract: A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve sensor has first and second wing portions which extend laterally beyond a track width of the spin valve sensor and are exchange coupled to first and second AFM pinning layers. Magnetic moments of the wing portions of the free layer are pinned parallel to the ABS and parallel to major planes of the layers of the sensor for magnetically stabilizing the central portion of the free layer which is located within the track width. The spin valve sensor has a central portion that extends between the first and second AFM layers. First and second lead layers overlay the first and second AFM layers and further overlay first and second portions of the central portion so that a distance between the first and second lead layers defines a track width that is less than a distance between the first and second AFM layers.Type: ApplicationFiled: March 21, 2002Publication date: September 25, 2003Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James Mac Freitag, Mustafa Pinarbasi, Patrick Rush Webb
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Patent number: 6621660Abstract: The electroplated components of a magnetic head of the present invention are fabricated utilizing a seed layer that is susceptible to reactive ion etch removal techniques. A preferred seed layer is comprised of tungsten or titanium. Following the electroplating of the components utilizing a fluorine species reactive ion etch process the seed layer is removed, and significantly, the fluorine RIE process creates a gaseous tungsten or titanium fluoride compound removal product. The problem of seed layer redeposition along the sides of the electroplated components is overcome because the gaseous fluoride compound is not redeposited. The present invention also includes an enhanced two part seed layer, where the lower part is tungsten, titanium or tantalum and the upper part is composed of the material that constitutes the component to be electroplated.Type: GrantFiled: January 16, 2001Date of Patent: September 16, 2003Assignee: International Business Machines CorporationInventors: Richard Hsiao, Neil Leslie Robertson, Patrick Rush Webb