Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

Abstract: A computer-implemented method for determining biometric data of an eye and a corresponding method for manufacturing spectacle lenses taking into account the biometric data determined. The method includes: providing individual standard data of a user, the standard data including prescription data including a distance prescription and/or a near prescription of at least one eye of a user; and calculating individual additional data including at least one individual biometric parameter of the at least one eye of the user based on the individual standard data and using a statistical model describing a relation between the standard data and the additional data, wherein the statistical model has been derived using statistical analysis of a training data set with a plurality of reference data sets, each of the reference data sets including standard data and additional data associated with the standard data.

Abstract: A connection device for at least one plug-in portion including an annular external groove includes a housing, into which at least one plug-in portion can be plugged, and also at least in each case one integral locking element and a securing device. A locking element includes a securing portion and a locking portion which can be preassembled in the housing. In the preassembled state, the locking portion, by elastic deflection, permits a plug-in portion to be plugged into the housing and brings about the locking of the plug-in portion in the housing. By means of the securing device, the securing portion can be secured on an outer side of the housing opening against displacement in a circumferential direction. A securing device is designed as a ring which engages around the housing and is movable on the housing at least axially counter to a resistance and has an axial recess in a plugging-in direction.

Abstract: The present invention relates to a method of determining a reduction of remaining service lifetime of an electrical device during a specific time period. A measurement system is provided comprising a temperature measurement device, a current measurement device and a voltage measurement device. A temperature value, voltage values and current values are measured by using the measurement device. A harmonic load is determined based on the current values. A reduced maximum operating temperature is determined based on the harmonic load. An amount of transient over-voltages is determined based on the voltage values. A transient aging factor is determined based on the amount of transient over-voltages. A temperature dependent aging factor is determined based on the temperature value and the reduced maximum operating temperature. Finally, the reduction of remaining service life is determined based on the specific time period, the transient aging factor and the temperature dependent aging factor.

Abstract: A connection device (1) for at least one plug-in portion (3) comprising an annular external groove (2) comprises a housing (7), into which at least one plug-in portion (3) can be plugged, and also at least in each case one integral locking element (9) and a securing device (15). A locking element (9) comprises a securing portion (11) and a locking portion (10) which can be preassembled in the housing (7). In the preassembled state, the locking portion (10), by elastic deflection, permits a plug-in portion (3) to be plugged into the housing (7) and brings about the locking of said plug-in portion in the housing (7). By means of the securing device (15), the securing portion (11) can be secured on an outer side of the housing opening (13) against displacement in a circumferential direction (14). A securing device (15) is designed as a ring which engages around the housing (7) and is movable on said housing (7) at least axially counter to a resistance and has an axial recess (16) in a plugging-in direction (8).

Abstract: The present invention relates to a method of determining a reduction of remaining service lifetime of an electrical device during a specific time period. A measurement system is provided comprising a temperature measurement device, a current measurement device and a voltage measurement device. A temperature value, voltage values and current values are measured by using the measurement device. A harmonic load is determined based on the current values. A reduced maximum operating temperature is determined based on the harmonic load. An amount of transient over-voltages is determined based on the voltage values. A transient aging factor is determined based on the amount of transient over-voltages. A temperature dependent aging factor is determined based on the temperature value and the reduced maximum operating temperature. Finally, the reduction of remaining service life is determined based on the specific time period, the transient aging factor and the temperature dependent aging factor.

Abstract: A method of determining a reduction of remaining service lifetime of an electrical device during a specific time period. The method comprising the steps of providing a measurement system comprising a temperature measurement device; a current measurement device and a voltage measurement device; measuring a temperature value, voltage values and current values by using the measurement device; determining a harmonic load based on the current values; determining a reduced maximum operating temperature based on the harmonic load; determining an amount of transient over-voltages based on the voltage values; determining a transient aging factor based on the amount of transient over-voltages; determining a temperature dependent aging factor based on the temperature value and the reduced maximum operating temperature; and determining the reduction of remaining service life based on the specific time period, the transient aging factor and the temperature dependent aging factor.

Abstract: The present invention relates to a method of determining a reduction of remaining service lifetime, of an electrical device during a specific time period. A measurement system is provided comprising a temperature measurement device, a current measurement device and a voltage measurement device. A temperature value, voltage values and current values are measured by using the measurement device. A harmonic load is determined based on the current values. A reduced maximum operating temperature is determined based on the harmonic load. An amount of transient over-voltages is determined based on the voltage values. A transient aging factor is determined based on the amount of transient over-voltages. A temperature dependent aging factor is determined based on the temperature value and the reduced maximum operating temperature.

Abstract: The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes.

Abstract: Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.

Abstract: Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542,543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical actuation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.

Abstract: The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes.

Abstract: Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542, 543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical acutation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.

Abstract: Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.

Abstract: A device and a method for reducing particle exposure to substrates during thermal treatment are disclosed. Semiconductor wafers may be rotated on a device within a process chamber divided into two partial chambers such that a first partial chamber contains the substrate to be thermally treated and a second partial chamber contains at least parts of the rotation device. Between the partial chambers, a flow of gas is set such that gas from the second partial chamber is substantially prevented from passing into the first partial chamber. In this way, particles which are produced by rotation abrasion in the second partial chamber are largely prevented from passing onto the substrate to be thermally treated. This device and this method are particularly advantageous if the rotation is realized by means of a gas drive, wherein the gas used for the rotation can be introduced directly into the second partial chamber.

Abstract: The aim of the invention is to reduce the formation of scratches in a device for the thermal treatment of substrates, in particular, semiconductor substrates, in a chamber in which the substrate is placed upon support elements. According to the invention, said aim is achieved by means of displaceable support elements.

Abstract: The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element (15) can be at least partly lowered and/or raised in the reaction chamber.

Abstract: The aim of the invention is to reduce the formation of scratches in a device for the thermal treatment of substrates, in particular, semiconductor substrates, in a chamber in which the substrate is placed upon support elements. According to the invention, said aim is achieved by means of displaceable support elements.

Abstract: A method is provided. The method, comprises: power amplifying, with at least two parallel power amplifiers, at least two pre-distorted signals each corresponding to a unique transmit band, wherein each power amplifier operates in a unique transmit band; and pre-distorting, with a single pre-distortion system, at least two signals in different transmit bands, where the pre-distortion of each of the at least two signals is based upon a portion of a corresponding power amplified, pre-distorted signal, and where the pre-distortion diminishes certain IMD products in the corresponding power amplified, pre-distorted signal.