Abstract: A method of manufacturing a modified structure comprising a semiconducting modified graphene layer on a substrate, comprising the subsequent following steps: supply of an initial structure comprising at least one substrate, formation of a graphene layer on the substrate, hydrogenation of the initial structure by exposure to atomic hydrogen, characterized in that the hydrogenation step of the graphene layer is done with an exposure dose between 100 and 4000 Langmuirs, and forms a modified graphene layer.

Abstract: A method of manufacturing a modified structure comprising a semiconducting modified graphene layer on a substrate, comprising the subsequent following steps: supply of an initial structure comprising at least one substrate, formation of a graphene layer on the substrate, hydrogenation of the initial structure by exposure to atomic hydrogen, characterised in that the hydrogenation step of the graphene layer is done with an exposure dose between 100 and 4000 Langmuirs, and forms a modified graphene layer.

Abstract: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.

Abstract: Nanostructures with 0, 1, 2 and 3 dimensions, with negative differential resistance and method for making these nanostructures. A nanostructure according to the invention may notably be used in nanoelectronics. It comprises at least one structure (32) or at least one plurality of said at least one structure, at the surface of a silicon carbide substrate (30), the structure being selected from quantum dots, atomic segments, atomic lines and clusters, and at least one metal deposit (34), this metal deposit covering at least the structure or at least the plurality of said at least one structure, or of the combination of two or more of these nanostructures with 0, 1, 2 or 3 dimensions.

Abstract: Substrate, in particular in silicon carbide, covered by a thin film of stoichiometric silicon nitride, for the manufacture of electronic components and method for obtaining said film. To obtain the film on the substrate (1) in the presence of at least one nitrogen gas, the substrate is covered with a film (2) of a material that is permeable to said gas and the film of silicon nitride is capable of forming at the interface between the substrate and the film of the material. The invention applies for example to microelectronics.

Abstract: Silicon layer highly sensitive to oxygen and method for obtaining said layer. This layer (2), formed on a substrate (4) for example of SiC, has a 3'2 structure. To obtain it, it is possible to substantially uniformly deposit silicon on a surface of the substrate. The invention can be applied for example to microelectronics.

Abstract: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.

Abstract: The invention relates to an anti-reflecting coating (20) comprising a combined inner coating (21), made of anti-reflecting silicon, and outer coating (22) made of carbon in the form of an amorphous diamond which is essentially non-porous and essentially devoid of foreign species. The invention also relates to a method for the production of an anti-reflecting coating and to the use thereof as a coating for a solar batter (10). The coating is less likely to deteriorate with time and can improve the spectral domain of efficient conversion of radiation.

Abstract: Method for metallizing the pre-passivated surface of a semiconductor material and material obtained by said method. According to the invention, which is applied in particular in microelectronics, the material surface (2) is prepared so that it has bonds capable of adsorbing atoms of hydrogen or of a metal element, one ore several layers are passivated, preferably immediately underneath the surface, by exposing it to a passivation compound, and the surface (4) is metallized by exposure to atoms of hydrogen or of the metal element.

Abstract: Metallic nano-objects, formed on surfaces of semiconductors, and a process for manufacturing these nano-objects. The invention is applicable in nano-electronics and for example provides a means of obtaining nano-objects (4) by depositing a metal on a prepared surface (2) of cubic SiC.

Abstract: Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C?C (4) of sp configuration, into a plane of dimers C—C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.

Abstract: Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2x2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C?C (4) of sp configuration, into a plane of dimers C-C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.

Abstract: According to the invention, parallel atomic lines (4) are formed on the surface of a substrate (2) in silicon carbide, and a material is deposited on this surface, able to be adsorbed selective fashion between the atomic lines and not on these atomic lines, the depositing of this material thereby generating strips (6,8) of this material between the atomic lines.

Abstract: A highly oxygen-sensitive silicon layer (2) is formed on a substrate (4) of, for example, SiC. The layer (2) has a 4×3 surface structure. The silicon layer (2) is deposited on a surface of the substrate (4) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.

Abstract: Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.

Abstract: This invention relates to a process for improving the properties of metal oxide superconductors said process comprising deposition an alkali metal layer having a thickness of less than about three monolayers onto the surface of an oxide superconductor by evaporation.

Abstract: Nitride layers are formed on semiconductor substrates utilizing alkali metals as catalysts. The surface of the semiconductor substrate first has a thin layer of an alkali metal deposited thereon and then is exposed to nitrogen from a nitrogen source at temperatures and pressures sufficient to grow a nitride layer, which will generally occur at lower temperatures than required for nitride formation by conventional processes. The surface is then annealed and the catalyst removed by heating at moderate temperatures, desorbing the catalyst and leaving a nitride layer on the surface of the substrate which is uncontaminated by the alkali metal catalyst. The process is particularly suited to the formation of nitride layers on silicon utilizing essentially a monolayer of the alkali metal such as sodium.