Abstract: A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.

Abstract: A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.

Abstract: Chemical additives are used to increase the rate of deposition for the amorphous silicon film (?Si:H) and/or the microcrystalline silicon film (?CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Abstract: A support system designed to reduce the stress exerted on the back of a wearer when he bends over to lift a load. It comprises a harness and a yoke for distributing the load on the shoulder of the wearer and a tension system equipped with elastic cables. It further comprises leggings including straps designed to wrap around the sole of the wearer and to maintain the force acting on the leg as close as possible to the bone structure of the leg of the wearer, thereby relieving stress on his back and along his legs.

Abstract: The objective of this invention is to use chemical additives to increase the rate of deposition processes for the amorphous silicon film (?Si:H) and/or the microcrystalline silicon film (?CSi:H), and improve the electrical current generating capability of the deposited films for photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Abstract: A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.

Abstract: This invention is a back support system designed to reduce the stress exerted on the back of a wearer when he bends over to lift a load. This back support system comprises a harness and a yoke for distributing the load on the shoulder of the wearer. The back support also comprises a tension system equipped with elastic cables. The back support further comprises leggings including straps designed to wrap around the sole of the wearer and to maintain the force acting on the leg as close as possible to the bone structure of the leg of the wearer, thereby relieving stress on his back and along his legs.

Abstract: A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.