Abstract: A method is provided of indexing an electron diffraction pattern obtained from a crystalline sample. Indexing data comprising phase and crystallographic orientation information is obtained for first set of locations on the sample. A second set of locations to be indexed is identified. For each nominal location in the second set an experimental electron diffraction pattern is obtained, together with a simulated template from a number of previously indexed locations in the first set, the previously indexed locations being in a proximal region of the sample to the nominal location. Further simulated templates are generated by modifying the crystallographic orientation for the previously indexed locations at angular sub-intervals. The templates are compared with the experimental pattern for the nominal location and, using a similarity measure, a resultant indexing of the location is produced. A corresponding system is also disclosed.

Abstract: A method of indexing an electron diffraction pattern comprises obtaining a number of experimental electron diffraction patterns at a low resolution from a sample of material using a detector. A master simulation dataset is loaded into the primary memory of a computer system for each phase of the sample material. A simulated template is generated at the low resolution in the primary memory of the computer by using the master simulation dataset from the primary memory wherein the simulated template represents a simulated electron diffraction pattern for a nominal crystallographic orientation. The simulated template is compared with the experimental electron diffraction pattern so as to generate a corresponding similarity measure which is stored. The process is repeated for all crystallographic orientations using crystallographic orientation intervals, and for each phase and each location on the sample.

Abstract: The invention relates to a method of preparing a sample for analysis. The method comprises: providing a sample comprising a surface region of interest on a first face of the sample and a second face oriented at an angle to the first face about a common edge between the first and second faces, the second face extending between the common edge and a second edge on the opposing side of the second face of the sample; and milling the second face of the sample to provide a trench in the surface of the second face, the trench extending from a first position on the second face between the common edge and the second edge to a second position adjacent to the common edge; wherein the trench is arranged so as to provide an electron transparent sample layer comprising the surface region of interest. By milling the second face of the sample only, a surface region of interest on the first face of the sample is fully preserved and remains free of milling beam induced damage.