Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to the front and back surfaces of the diaphragm. The diaphragm is contiguous with the piezoelectric plate around at least 50% of a periphery of the diaphragm.

Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator device includes a substrate having a surface, wherein the surface comprises an etched cavity, and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans the cavity. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate, wherein interleaved fingers of the IDT are aligned with the cavity such that the interleaved fingers are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT.

Abstract: Acoustic resonator devices and filters are disclosed. A piezoelectric plate is attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern is formed on a surface of the piezoelectric plate. The first conductor pattern includes interleaved fingers of an interdigital transducer disposed on the diaphragm, and a first plurality of contact pads. A second conductor pattern is formed on a surface of a base, the second conductor pattern including a second plurality of contact pads. Each pad of the first plurality of contact pads is directly bonded to a respective pad of the second plurality of contact pads. A ring-shaped seal is form between a perimeter of the piezoelectric plate and a perimeter of the base.

Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to the front and back surfaces of the diaphragm. The diaphragm is contiguous with the piezoelectric plate around at least 50% of a perimeter of the cavity.

Abstract: Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least a portion of an edge of the diaphragm is at an oblique angle to the fingers.

Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a Z-cut lithium niobate piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the piezoelectric plate.

Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The interleaved fingers of the IDT are substantially molybdenum. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. A thickness of the interleaved fingers of the IDT is between 0.25 times and 2.5 times a thickness of the piezoelectric plate.

Abstract: Resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a substrate and a single-crystal piezoelectric plate having parallel front and back surfaces. An acoustic Bragg reflector is sandwiched between a surface of the substrate and the back surface of the single-crystal piezoelectric plate. An interdigital transducer (IDT) is formed on the front surface. The IDT and the single-crystal piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the single-crystal piezoelectric plate. The acoustic Bragg reflector is configured to reflect the primary shear acoustic mode.

Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the piezoelectric plate.

Abstract: Resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a substrate and a single-crystal piezoelectric plate having parallel front and back surfaces. An acoustic Bragg reflector is sandwiched between a surface of the substrate and the back surface of the single-crystal piezoelectric plate. An interdigital transducer (IDT) is formed on the front surface. The IDT is configured to excite shear acoustic waves in the piezoelectric plate in response to a radio frequency signal applied to the IDT.

Abstract: Filter devices and methods of fabrication are disclosed. A filter device includes a piezoelectric plate attached to a substrate, portions of the piezoelectric plate forming diaphragms spanning respective cavities in the substrate. A conductor pattern formed on a surface of the piezoelectric plate includes a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators including a shunt resonator and a series resonator, interleaved fingers of each of the plurality of IDTs disposed on one of the diaphragms. Radio frequency signals applied to the IDTs excite respective primary shear acoustic modes in the respective diaphragms. A thickness of a first dielectric layer disposed on the front surface between the fingers of the IDT of the shunt resonator is greater than a thickness of a second dielectric layer disposed on the front surface between the fingers of the IDT of the series resonator.

Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to the front and back surfaces of the diaphragm. The diaphragm is contiguous with the piezoelectric plate around at least 50% of a perimeter of the cavity.

Abstract: Resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a substrate and a single-crystal piezoelectric plate having parallel front and back surfaces. An acoustic Bragg reflector is sandwiched between a surface of the substrate and the back surface of the single-crystal piezoelectric plate. An interdigital transducer (IDT) is formed on the front surface. The IDT is configured to excite shear acoustic waves in the piezoelectric plate in response to a radio frequency signal applied to the IDT.

Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on a portion of the piezoelectric plate suspended over a cavity formed in the substrate.

Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on a portion of the piezoelectric plate suspended over a cavity formed in the substrate.

Abstract: Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness DCU defined by 0.12 P?DCU?0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness DOX defined by 3.1DCU?DOX?4.5DCU.

Abstract: Surface acoustic wave (SAW) filters and methods of fabricating SAW filters are disclosed. A filter includes a piezoelectric wafer having a thickness within one of a plurality of noncontiguous thickness ranges that define piezoelectric wafers upon which filter circuits meeting predetermined requirements can be fabricated according to a predetermined design using a predetermined fabrication process, and a filter circuit fabricated on the piezoelectric substrate according to the predetermined design using the predetermined fabrication process.

Abstract: Surface acoustic wave (SAW) filters and methods of fabricating SAW filters are disclosed. A filter includes a piezoelectric wafer having a thickness within one of a plurality of noncontiguous thickness ranges that define piezoelectric wafers upon which filter circuits meeting predetermined requirements can be fabricated according to a predetermined design using a predetermined fabrication process, and a filter circuit fabricated on the piezoelectric substrate according to the predetermined design using the predetermined fabrication process.

Abstract: Methods of designing surface acoustic wave (SAW) filters and SAW filters fabricated on piezoelectric substrates are disclosed. A filter design including two or more SAW resonators may be established. Admittances of relevant plate modes associated with each of the two or more SAW resonators may be modeled and added in parallel with the admittances of the respective SAW resonators. The filter design including the admittances of relevant plate modes may be iterated to establish a final filter design that satisfies a set of design requirements.

Abstract: This invention enables high temperature superconducting (HTS) metal oxide materials ReBa2Cu3Ox ((RE)BCO) to carry high superconducting currents at high current densities under high magnetic field (?3 Tesla), in all orientations of the field, and at high temperatures (65 Kelvin). The superconductor is adapted to carry current in a superconducting state, with the superconductor having a current (I) carrying capacity of at least 250 A/cm width, in a field of 3 Tesla (T), at 65 Kelvin (K), at all angles relative to the coated conductor. More preferably, the current carrying capacity extends through the range of substantially 250 A/cm to 500 A/cm. Excellent performance is achieved by use of intrinsic pinning centers in the HTS compound. The invention preferably does not require the addition of extra elements or compounds or particles to the superconducting compound during synthesis, nor does it require extra process steps.