Patents by Inventor Patrick W. DeHaven
Patrick W. DeHaven has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9224675Abstract: A method includes forming a first metal liner conformally along a sidewall and a bottom of a contact opening. A second metal liner is formed above and in direct contact with the first metal liner, a grain size of the first metal liner is larger than a grain size of the second metal liner. A barrier layer is formed above and in direct contact with the second metal liner and the contact opening is filled with a conductive material to form a middle-of-the-line contact.Type: GrantFiled: July 31, 2014Date of Patent: December 29, 2015Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar, Keith Kwong Hon Wong
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Patent number: 8574953Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: GrantFiled: January 31, 2012Date of Patent: November 5, 2013Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
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Publication number: 20120126216Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: ApplicationFiled: January 31, 2012Publication date: May 24, 2012Applicant: International Business Machines CorporationInventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
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Patent number: 8123997Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: GrantFiled: July 3, 2008Date of Patent: February 28, 2012Assignee: International Business Machines CorporationInventors: Patrick W DeHaven, David R Medeiros, David B Mitzi
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Patent number: 7951708Abstract: A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an iridium concentration of at least 60 atomic % such that the barrier layer has a resulting amorphous structure.Type: GrantFiled: June 3, 2009Date of Patent: May 31, 2011Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, Daniel C. Edelstein, Philip L. Flaitz, Takeshi Nogami, Stephen M. Rossnagel, Chih-Chao Yang
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Publication number: 20100311236Abstract: A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an iridium concentration of at least 60% by atomic weight such that the barrier layer has a resulting amorphous structure.Type: ApplicationFiled: June 3, 2009Publication date: December 9, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Patrick W. DeHaven, Daniel C. Edelstein, Philip L. Flaitz, Takeshi Nogami, Stephen M. Rossnagel, Chih-Chao Yang
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Publication number: 20080292825Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: ApplicationFiled: July 3, 2008Publication date: November 27, 2008Applicant: International Business Machines CorporationInventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
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Patent number: 7456045Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: GrantFiled: August 1, 2006Date of Patent: November 25, 2008Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
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Patent number: 7407875Abstract: Embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back-end-of-line interconnect. The method includes creating at least one contact opening in said layer of dielectric material; forming a first TiN film through a chemical-vapor deposition process, said first TiN film lining said contact opening; and forming a second TiN film through a physical vapor deposition process, said second TiN film lining said first TiN film. A contact structure fabricated according to embodiments of the invention is also provided.Type: GrantFiled: September 6, 2006Date of Patent: August 5, 2008Assignee: International Business Machines CorporationInventors: Keith Kwong Hon Wong, Patrick W. DeHaven, Sadanand V. Deshpande, Anita Madan
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Publication number: 20080054326Abstract: Embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back-end-of-line interconnect. The method includes creating at least one contact opening in said layer of dielectric material; forming a first TiN film through a chemical-vapor deposition process, said first TiN film lining said contact opening; and forming a second TiN film through a physical vapor deposition process, said second TiN film lining said first TiN film. A contact structure fabricated according to embodiments of the invention is also provided.Type: ApplicationFiled: September 6, 2006Publication date: March 6, 2008Applicant: International Business Machines CorporationInventors: Keith Kwong Hon Wong, Patrick W. DeHaven, Sadanand V. Deshpande, Anita Madan
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Patent number: 7291516Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: GrantFiled: June 5, 2006Date of Patent: November 6, 2007Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
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Patent number: 7223691Abstract: A novel interlevel contact via structure having low contact resistance and improved reliability, and method of forming the contact via. The method comprises steps of: etching an opening through an interlevel dielectric layer to expose an underlying metal (Copper) layer surface; and, performing a low energy ion implant of an inert gas (Nitrogen) into the exposed metal underneath; and, depositing a refractory liner into the walls and bottom via structure which will have a lower contact resistance due to the presence of the proceeding inert gas implantation. Preferably, the inert Nitrogen gas reacts with the underlying exposed Copper metal to form a thin layer of CuN.Type: GrantFiled: October 14, 2004Date of Patent: May 29, 2007Assignee: International Business Machines CorporationInventors: Cyril Cabral, Jr., Lawrence A. Clevenger, Timothy J. Dalton, Patrick W. DeHaven, Chester T. Dziobkowski, Sunfei Fang, Terry A. Spooner, Tsong-Lin L. Tai, Kwong Hon Wong, Chin-Chao Yang
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Patent number: 7105360Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining an solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: GrantFiled: March 8, 2002Date of Patent: September 12, 2006Assignee: International Business Machines CorporationInventors: Patrick W Dehaven, David R Medeiros, David B Mitzi
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Patent number: 6916729Abstract: A method of forming a salicide on a semiconductor device includes depositing a first refractory metal layer over a silicon region of a substrate, depositing a near-noble metal layer over the first refractory metal layer, and depositing a second refractory metal layer over the near-noble metal layer. The semiconductor device is annealed in a first annealing process to form a silicide layer abutting the doped region of the semiconductor device. Un-reacted portions of the near-noble metal layer and the second refractory metal layer are removed. The device may be annealed in an optional second annealing process to convert the silicide layer to a low resistance phase silicide material. Junction leakage and bridging are minimized or eliminated by embodiments of the present invention, and a smoother silicided surface is achieved.Type: GrantFiled: April 8, 2003Date of Patent: July 12, 2005Assignees: Infineon Technologies AG, International Business Machines CorporationInventors: Sunfei Fang, Keith Kwong Hon Wong, Paul D. Agnello, Christian Lavoie, Lawrence A. Clevenger, Chester T. Dziobkowski, Richard J. Murphy, Patrick W. DeHaven, Nivo Rovedo, Hsiang-Jen Huang
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Patent number: 6909772Abstract: An apparatus and method for mapping film thickness of textured polycrystalline thin films. Multiple sample films of known thicknesses are provided, and each is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of each sample film is calculated based on multiple incomplete pole figures collected from the diffraction image and used to correct the x-ray diffraction intensities obtained from such sample film. Corrected and integrated diffraction intensities of the sample films are then correlated to respective known film thicknesses of such films, and the correlation so determined can be used to map the film thickness of a textured polycrystalline thin film of unknown thickness, based on the corrected and integrated diffraction intensity calculated for such thin film.Type: GrantFiled: December 23, 2003Date of Patent: June 21, 2005Assignees: HyperNex, Inc., International Business Machines Corp.Inventors: Krzysztof J. Kozaczek, David S. Kurtz, Paul R. Moran, Roger I. Martin, Patrick W. Dehaven, Kenneth P. Rodbell, Sandra G. Malhotra
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Publication number: 20040203229Abstract: A method of forming a salicide on a semiconductor device includes depositing a first refractory metal layer over a silicon region of a substrate, depositing a near-noble metal layer over the first refractory metal layer, and depositing a second refractory metal layer over the near-noble metal layer. The semiconductor device is annealed in a first annealing process to form a silicide layer abutting the doped region of the semiconductor device. Un-reacted portions of the near-noble metal layer and the second refractory metal layer are removed. The device may be annealed in an optional second annealing process to convert the silicide layer to a low resistance phase silicide material. Junction leakage and bridging are minimized or eliminated by embodiments of the present invention, and a smoother silicided surface is achieved.Type: ApplicationFiled: April 8, 2003Publication date: October 14, 2004Inventors: Sunfei Fang, Keith Kwong Hon Wong, Paul D. Agnello, Christian Lavoie, Lawrence A. Clevenger, Chester T. Dziobkowski, Richard J. Murphy, Patrick W. DeHaven, Nivo Rovedo, Hsiang-Jen Huang
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Patent number: 6792075Abstract: An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of the sample film, is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.Type: GrantFiled: August 21, 2002Date of Patent: September 14, 2004Assignee: HyperNex, Inc.Inventors: Krzysztof J. Kozaczek, David S. Kurtz, Paul R. Moran, Roger I. Martin, Patrick W. Dehaven, Kenneth P. Rodbell, Sandra G. Malhotra
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Publication number: 20040170249Abstract: An apparatus and method for mapping film thickness of textured polycrystalline thin films. Multiple sample films of known thicknesses are provided, and each is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of each sample film is calculated based on multiple incomplete pole figures collected from the diffraction image and used to correct the x-ray diffraction intensities obtained from such sample film. Corrected and integrated diffraction intensities of the sample films are then correlated to respective known film thicknesses of such films, and the correlation so determined can be used to map the film thickness of a textured polycrystalline thin film of unknown thickness, based on the corrected and integrated diffraction intensity calculated for such thin film.Type: ApplicationFiled: December 23, 2003Publication date: September 2, 2004Inventors: Krzysztof J. Kozaczek, David S. Kurtz, Paul R. Moran, Roger I. Martin, Patrick W. Dehaven, Kenneth P. Rodbell, Sandra G. Malhotra
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Publication number: 20040047447Abstract: An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of the sample film, is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.Type: ApplicationFiled: August 21, 2002Publication date: March 11, 2004Inventors: Krzysztof J. Kozaczek, David S. Kurtz, Paul R. Moran, Roger I. Martin, Patrick W. Dehaven, Kenneth P. Rodbell, Sandra G. Malhotra
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Patent number: 6638374Abstract: A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100° C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than −20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.Type: GrantFiled: January 16, 2002Date of Patent: October 28, 2003Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, Charles C. Goldsmith, Jeffery L. Hurd, Suryanarayana Kaja, Michele S. Legere, Eric D. Perfecto