Abstract: A double wall reaction chamber assembly comprising a cylindrical inner wall and a cylindrical outer wall axially parallel thereto, the inner wall having an annular junction with a thickened annular junction flange on the outer surface thereof. The lower end of the outer wall being fused to the outer surface of the thickened annular junction. The outer surface of the inner wall and the inner surface of the annular junction flange define a sloping annular drainage channel to a downwardly sloping drainage port, enabling liquid to drain from the junction. The double wall reaction chamber assembly has a cylindrical inner wall and a cylindrical outer wall axially parallel thereto. It has a lower end fused to the inner wall. A gas distribution tube has a gas inlet end and a gas distributor end, the gas distributor end comprising a split tee having a junction.

Abstract: In summary, the vertical rapid cooling furnace of this invention for treating semiconductor wafers with self contained gas chilling and recycling comprises a hot wall reaction tube positioned within a cylindrical array of heating coils. Space between the hot wall reaction tube and said array of heating coils provides a cooling gas passageway therebetween. The cooling gas passageway has an inlet and an outlet, a chilled gas inlet communicating with the inlet of the cooling gas passageway and a heated gas outlet communicating with the outlet of the cooling gas passageway. The furnace includes a heat exchanger having a hot gas inlet and a chilled gas outlet, the hot gas inlet thereof communicating with said heated gas outlet, and the chilled gas outlet communicating with said cooling gas passageway inlet. With this system, heated gas from the cooling gas passageway can be chilled to remove heat therefrom and returned to the cooling gas passageway to remove heat from the furnace.