Abstract: A method for producing a semiconductor device is provided. A growth substrate having a first side and an opposite second side is provided. At least one electronic component is produced by depositing and/or structuring at least one layer on the first side of the growth substrate, said layer containing or consisting of at least one compound semiconductor. The first side of the electronic component that is opposite the first side of the growth substrate is connected to a support. The growth substrate is removed. The support has at least one feed-through and/or at least one conductor track, which is connected to at least one terminal contact of the electronic component. Alternatively or in addition, a semiconductor device produced in this way and a support having such a semiconductor device may be provided.

Abstract: A method for determining the structure of a transistor having at least one first layer including GaN, one second layer including AlxGa1-xN disposed on the first layer, and one fourth layer including a metal or an alloy disposed on the second layer. The method includes setting the layer thickness of the second layer, setting the aluminum content x of the second layer, producing at least the second layer and the first layer, determining the surface potential of formula (I) and/or the charge carrier density n, and/or the charge carrier motility ? after producing the second layer and the first layer, and selecting the material of the fourth layer as a function of the at least one measurement result.

Abstract: A method for determining the structure of a transistor having at least one first layer including GaN, one second layer including AlxGa1-xN disposed on the first layer, and one fourth layer including a metal or an alloy disposed on the second layer. The method includes setting the layer thickness of the second layer, setting the aluminum content x of the second layer, producing at least the second layer and the first layer, determining the surface potential of formula (I) and/or the charge carrier density n, and/or the charge carrier motility ? after producing the second layer and the first layer, and selecting the material of the fourth layer as a function of the at least one measurement result.