Abstract: The invention concerns a magnetic field-sensitive component, a magnetic field sensing device and a memory structure each incorporating said component, and a method for detecting a magnetic field using said component. A component according to the invention comprises: at least one diluted magnetic semiconductor, first means for generating an electric current in said semiconductor along one predetermined direction, and second means for producing a signal representing a Hall voltage transverse to said direction, and it is so designed that the semiconductor is selected from the group consisting of II/VI and IV/IV type semiconductors and comprises a zone sensitive to said field which forms all or part of a magnetic quantum well, wherein are confined current carriers incorporated by doping in the semiconductor and inducing in said well ferromagnetic exchange interactions.

Abstract: The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.

Abstract: The invention concerns a magnetic field-sensitive component, a magnetic field sensing device and a memory structure each incorporating said component, and a method for detecting a magnetic field using said component. A component according to the invention comprises: at least one diluted magnetic semiconductor, first means for generating an electric current in said semiconductor along one predetermined direction, and second means for producing a signal representing a Hall voltage transverse to said direction, and it is so designed that the semiconductor is selected from the group consisting of II/VI and IV/IV type semiconductors and comprises a zone sensitive to said field which forms all or part of a magnetic quantum well, wherein are confined current carriers incorporated by doping in the semiconductor and inducing in said well ferromagnetic exchange interactions.

Abstract: The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.