Abstract: A shift register includes cascade-connected stages, each of which includes a data latch and an output stage. In at least one embodiment, the latch has a single data input which, in use, receives a date signal from a preceding or succeeding stage. The output stage includes a first switch, which passes a clock signal to the stage output when the output stage is activated by the latch. The output stage also comprises a second switch, which passes the lower supply voltage to the stage output when the output stage is inactive.

Abstract: A charge storage circuit for a pixel comprises a charge storage node. First and second series-connected transistors (8,10) are provided for selectively isolating the charge storage node from a first voltage input (9,SL) for supplying a data voltage. The circuit is provided with a voltage follower circuit for replicating a voltage at the charge storage node (12) at another node in the circuit thereby to reduce the drain-source voltage across the second transistor (10). The first transistor forms part of the voltage follower circuit.

Abstract: A pixel circuit for a display includes a pixel storage node for storing and presenting a pixel voltage to a pixel display element, a cell storage node for storing the data on the pixel storage node, and a first storage capacitor and a second storage capacitor each including a first electrode and a second electrode. The first electrode of the first storage capacitor is operatively coupled to the pixel storage node and the first electrode of the second storage capacitor operatively coupled to the cell storage node. The second electrode of the first and second storage capacitors is operatively coupled to a respective different one of first and second independent voltage signal lines.

Abstract: A pixel circuit is disclosed that includes a video mode, a memory mode and an inversion mode of operation. The pixel circuit includes a pixel storage node for storing data to be output by a liquid crystal cell, a pixel write circuit configured to receive display data and provide the display data to the pixel storage node for storage thereon. Further, the pixel circuit includes a hold circuit operatively coupled to the pixel write circuit and configured to minimize leakage of charge from the pixel storage node through the pixel write circuit, and an internal inversion circuit operatively coupled to the hold circuit and the pixel storage node and configured to invert a voltage of the data stored on the pixel storage node and a voltage applied to a liquid crystal cell that receives data stored on the pixel storage node.

Abstract: An array element circuit with an integrated impedance sensor is provided. The array element circuit includes an array element which is controlled by application of a drive voltage by a drive element; writing circuitry for writing the drive voltage to the drive element; and sense circuitry for sensing an impedance presented at the drive element.

Abstract: A static random-access memory (SRAM) cell which includes: a sampling switch and a feedback switch; and a first inverter and a second inverter connected in series whereby an output of the first inverter is connected to an input of the second inverter. An input of the first inverter is connected to a data input of the SRAM cell via the sampling switch, and to a data output of the SRAM cell independent of the feedback switch, an output of the second inverter is connected to the input of the first inverter via the feedback switch, and first and second clock inputs of the SRAM cell are configured to control the sampling switch and the feedback switch, respectively.

Abstract: A serial-to-parallel converter which includes n input latching elements; k intermediate latching elements, and n output latching elements configured to sample outputs of the k intermediate latching elements and a remaining (n?k) input latching elements of the n input latching elements, respectively, after the nth data of the n successive data has been sampled by the nth input latching element and before the kth data of a next n successive data in the serial input data stream has been sampled by the kth input latching element, wherein the n input latching elements and the k intermediate latching elements are transparent for one state of their clock input, and n and k are positive integers, where n>k.

Abstract: An active-matrix device is provided which includes a plurality of array element circuits arranged in rows and columns; a plurality of source addressing lines each shared between the array element circuits in corresponding same columns; a plurality of gate addressing lines each shared between the array element circuits in corresponding same rows; a plurality of sensor row select lines each shared between the array element circuits in corresponding same rows, wherein each of the plurality of array element circuits includes: an array element which is controlled by application of a drive voltage by a drive element; writing circuitry for writing the drive voltage to the drive element, the writing circuitry being coupled to a corresponding source addressing line and gate addressing line among the plurality of source addressing lines and gate addressing lines; and sense circuitry for sensing an impedance presented at the drive element, the sense circuitry being coupled to a corresponding sensor row select line; and

Abstract: A serial-to-parallel converter which includes n input latching elements; k intermediate latching elements, and n output latching elements configured to sample outputs of the k intermediate latching elements and a remaining (n?k) input latching elements of the n input latching elements, respectively, after the nth data of the n successive data has been sampled by the nth input latching element and before the kth data of a next n successive data in the serial input data stream has been sampled by the kth input latching element, wherein the n input latching elements and the k intermediate latching elements are transparent for one state of their clock input, and n and k are positive integers, where n>k.

Abstract: In one embodiment of the present invention, a display for receiving m-bit display data includes a display driver including a switched capacitor digital/analogue converter including an n-bit input, where m is not greater than n. The upper plates of the capacitors of the switched capacitor digital/analogue converter may be connected, in the zeroing phase, to one of a plurality of reference voltages. The choice of which reference voltage is connected to the upper plates of the capacitors of the switched capacitor digital/analogue converter in the zeroing phase is independent of the input n-bit digital code, and is determined by a signal internal to the display. The output voltage range from the converter in a decoding phase may be a first range in which output voltages are above and below one reference voltage or it may be a second range in which output voltages are above and below another reference voltage, depending on which reference voltage was selected in the preceding zeroing phase.

Abstract: A microfluidic device includes a plurality of array elements configured to manipulate one or more droplets of fluid on an array, each of the array elements including a top substrate electrode and a drive electrode between which the one or more droplets may be positioned, the top substrate electrode being formed on a top substrate, and the drive electrode being formed on a lower substrate; and active matrix drive circuitry arranged to provide drive signals to the top substrate and drive electrodes of the plurality of array elements to manipulate the one or more droplets among the plurality of array elements. With respect to one or more of the array elements the active matrix drive circuitry is configured to provide the drive signals to the top substrate and drive electrodes to selectively manipulate the one or more droplets within the array element both by Electro-wetting-on-Dielectric (EWOD) and by Dielectrophoresis (DEP).

Abstract: A pixel circuit for a display includes a pixel storage node for storing and presenting a pixel voltage to a pixel display element, a cell storage node for storing the data on the pixel storage node, and a first storage capacitor and a second storage capacitor each including a first electrode and a second electrode. The first electrode of the first storage capacitor is operatively coupled to the pixel storage node and the first electrode of the second storage capacitor operatively coupled to the cell storage node. The second electrode of the first and second storage capacitors is operatively coupled to a respective different one of first and second independent voltage signal lines.

Abstract: A pixel circuit is disclosed that includes a video mode, a memory mode and an inversion mode of operation. The pixel circuit includes a pixel storage node for storing data to be output by a liquid crystal cell, a pixel write circuit configured to receive display data and provide the display data to the pixel storage node for storage thereon. Further, the pixel circuit includes a hold circuit operatively coupled to the pixel write circuit and configured to minimize leakage of charge from the pixel storage node through the pixel write circuit, and an internal inversion circuit operatively coupled to the hold circuit and the pixel storage node and configured to invert a voltage of the data stored on the pixel storage node and a voltage applied to a liquid crystal cell that receives data stored on the pixel storage node.

Abstract: In one embodiment of the present invention, a drive circuit includes: a logic block connected between a source of a first voltage and a source of a second voltage, and a sampler including a plurality of sampling circuits. Each sampling circuit is for sampling, in use, an input data signal and outputting a voltage to a respective output. The drive circuit further includes a voltage booster having plurality of voltage boost circuits, each voltage boost circuit being associated with a respective one of the sampling circuits and, in use, generating a boosted voltage signal and providing the boosted voltage signal to the respective sampling circuit. Each voltage boost circuit is connected between the source of the first voltage and the source of the second voltage. The logic block may be, but is not limited to, a shift register.

Abstract: In one embodiment of the present invention, a multiple phase pulse generator includes n stages, where each stage includes a first sub-stage and a second sub-stage. The first sub-stage includes a first memory element and the second sub-stage includes a second memory element. The first memory element of each stage is arranged to be set by the preceding stage. The first sub-stage is arranged to supply a stage output pulse while the first memory element is set. The second memory element is arranged to be set by the stage output pulse. The second sub-stage is arranged to hold the first memory element reset after the stage output pulse while the second memory element is set.

Abstract: A display device includes a first layer having an optically active display portion, a second layer including a photovoltaic element, and a third layer including electronics operatively coupled to the first layer, wherein the electronics are configured to drive the optically active display portion. Further, the second layer is arranged between the first and third layers.

Abstract: A static random-access memory (SRAM) cell which includes: a sampling switch and a feedback switch; and a first inverter and a second inverter connected in series whereby an output of the first inverter is connected to an input of the second inverter. An input of the first inverter is connected to a data input of the SRAM cell via the sampling switch, and to a data output of the SRAM cell independent of the feedback switch, an output of the second inverter is connected to the input of the first inverter via the feedback switch, and first and second clock inputs of the SRAM cell are configured to control the sampling switch and the feedback switch, respectively.

Abstract: A digital logic circuit includes a plurality of transistors of a same conduction type. In at least one embodiment, a first transistor has a source, gate and drain connected to a first circuit node, a second circuit node and a first power supply line, respectively. A second transistor has a source, gate and drain connected to the second node, the first node and the first supply line, respectively. A third transistor has a drain connected to the first node. A fourth transistor has a gate and drain connected to a third circuit node and the second circuit node, respectively. A fifth transistor has a gate and drain connected to the first and third nodes, respectively. Such a circuit may be used, for example, as a latch in a shift register of an active matrix addressing arrangement.

Abstract: An array element circuit with an integrated impedance sensor is provided. The array element circuit includes an array element which is controlled by application of a drive voltage by a drive element; writing circuitry for writing the drive voltage to the drive element; and sense circuitry for sensing an impedance presented at the drive element.

Abstract: An active-matrix device is provided which includes a plurality of array element circuits arranged in rows and columns; a plurality of source addressing lines each shared between the array element circuits in corresponding same columns; a plurality of gate addressing lines each shared between the array element circuits in corresponding same rows; a plurality of sensor row select lines each shared between the array element circuits in corresponding same rows, wherein each of the plurality of array element circuits includes: an array element which is controlled by application of a drive voltage by a drive element; writing circuitry for writing the drive voltage to the drive element, the writing circuitry being coupled to a corresponding source addressing line and gate addressing line among the plurality of source addressing lines and gate addressing lines; and sense circuitry for sensing an impedance presented at the drive element, the sense circuitry being coupled to a corresponding sensor row select line; and