Abstract: A method for locally modifying a structure of a paperboard. A penetrating region (114) of the paperboard (110) is penetrated by laser radiation (102) such that moisture in the penetrating region (114) evaporates for locally modifying the structure of the penetrating region (114) e.g. by weakening the paperboard at the region and for deforming it there.

Abstract: A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Abstract: A method for separating and recovering silicon debris from sawing waste is characterized in that it includes the following steps: —treating the sawing waste so as to deoxidize the silicon debris in a manner that reduces their surface energy, —applying to the sawing waste thus treated a flotation method using a flotation liquid and a nonoxidizing flotation gas, and —recovering the silicon debris at the surface of the flotation liquid.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Abstract: A method for separating and recovering silicon debris from sawing waste is characterized in that it includes the following steps:—treating the sawing waste so as to deoxidize the silicon debris in a manner that reduces their surface energy,—applying to the sawing waste thus treated a flotation method using a flotation liquid and a nonoxidizing flotation gas, and—recovering the silicon debris at the surface of the flotation liquid.

Abstract: A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

Abstract: The substrate with electrodes is formed of a transparent material onto which is deposited a film (1) of a transparent conductive material of thickness e1 and of refractive index n1, said film being structured to form a set of electrodes (1a) whose contours (8) delimit insulating spaces (3), wherein the insulating spaces (3) are filled with a transparent dielectric material of thickness e2 and of refractive index n2 so that the respective thicknesses of the conductive material and the dielectric material are inversely proportional to the values of the refractive indices of said materials and said dielectric material forms neither depressions nor beads at the contour (8) of the electrodes. A hardcoating layer (7) may be disposed between the substrate (5) and the electrodes and a protective film (9) added. The substrate with electrodes is obtained by UV irradiation through a single mask.

Abstract: A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

Abstract: A process for providing a security paper, in particular a banknote, with a coloured marking, comprising providing a photosensitive preparation on a portion of said document and submitting at least selected areas of said portion to a light beam, wherein said preparation is capable of forming a film on said portion and comprises a substance capable of producing colloidal metal particles under the effect of UV irradiation, and said areas are irradiated by means of an UV-light beam.

Abstract: The substrate with electrodes is formed of a transparent material onto which is deposited a film (1) of a transparent conductive material of thickness e1 and of refractive index n1, said film being structured to form a set of electrodes (1a) whose contours (8) delimit insulating spaces (3), wherein the insulating spaces (3) are filled with a transparent dielectric material of thickness e2 and of refractive index n2 so that the respective thicknesses of the conductive material and the dielectric material are inversely proportional to the values of the refractive indices of said materials and said dielectric material forms neither depressions nor beads at the contour (8) of the electrodes. A hardcoating layer (7) may be disposed between the substrate (5) and the electrodes and a protective film (9) added. The substrate with electrodes is obtained by UV irradiation through a single mask.

Abstract: The substrate with electrodes is formed of a transparent material onto which is deposited a film (1) of a transparent conductive material of thickness e1 and of refractive index n1, said film being structured to form a set of electrodes (1a) whose contours (8) delimit insulating spaces (3), wherein the insulating spaces (3) are filled with a transparent dielectric material of thickness e2 and of refractive index n2 so that the respective thicknesses of the conductive material and the dielectric material are inversely proportional to the values of the refractive indices of said materials and said dielectric material forms neither depressions nor beads at the contour (8) of the electrodes. A hardcoating layer (7) may be disposed between the substrate (5) and the electrodes and a protective film (9) added. The substrate with electrodes is obtained by UV irradiation through a single mask.

Abstract: The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Abstract: A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

Abstract: A method for the gas phase deposition of partially fluorinated or perfluorinated alkyl silanes onto a substrate in a reaction chamber includes cleaning the substrate, hydrating the substrate with steam, drying the substrate and silanization of the substrate by deposition of the alkyl silane from the gas phase. The cleaning of the substrate is a plasma etching process and the hydration occurs directly after the plasma etching.

Abstract: The substrate with electrodes is formed of a transparent material onto which is deposited a film (1) of a transparent conductive material of thickness e1 and of refractive index n1, said film being structured to form a set of electrodes (1a) whose contours (8) delimit insulating spaces (3), wherein the insulating spaces (3) are filled with a transparent dielectric material of thickness e2 and of refractive index n2 so that the respective thicknesses of the conductive material and the dielectric material are inversely proportional to the values of the refractive indices of said materials and said dielectric material forms neither depressions nor beads at the contour (8) of the electrodes. A hardcoating layer (7) may be disposed between the substrate (5) and the electrodes and a protective film (9) added.

Abstract: The invention relates to a device for producing a gas mixture consisting of HMDSO and oxygen, whereby process gas is produced. In order to be able to continuously produce a large volume of process gas using such a device and to be able to withdraw the same at practical processable temperatures, the invention provides that a number of filling packages (2) are stacked in an elongated essentially vertical column (1) that can be cooled. In addition, an inlet tube (3), which is inserted into the column (1) from the exterior, and a gas outlet connection (6), which leads to the exterior, are secured in the upper area of said column (1). Devices (26) are also provided for measuring the temperature, the pressure and the amount of the exiting gas mixture. In addition, a distribution cup (29) which spans the cross-section of the column (1) and which is provided with gas flow-through openings (38) is placed underneath the inner discharge end (4) of the inlet tube (3).