Patents by Inventor Patrik Schmuki

Patrik Schmuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solar thermoplasmonic nanofurnaces and method for making and using same
    Patent number: 11807950
    Abstract: A thermoplasmonic device includes a titanium film and a plurality of titanium nitride tube elements disposed on the titanium film. Each of the titanium nitride tube elements includes an open top and a titanium nitride bottom. Each of the titanium nitride tube elements has titanium nitride tubular middle portion that extends from the open top to the titanium nitride bottom.
    Type: Grant
    Filed: May 2, 2022
    Date of Patent: November 7, 2023
    Assignee: Purdue Research Foundation
    Inventors: Vladimir M. Shalaev, Zhaxylyk Kudyshev, Alexandra Boltasseva, Alberto Naldoni, Alexander Kildishev, Luca Mascaretti, {hacek over (S)}t{hacek over (e)}phán Kment, Radek Zbo{hacek over (r)}il, Jeong Eun Yoo, Patrik Schmuki
  • Solar Thermoplasmonic Nanofurnaces and Method for Making and Using Same
    Publication number: 20220333266
    Abstract: A thermoplasmonic device includes a titanium film and a plurality of titanium nitride tube elements disposed on the titanium film. Each of the titanium nitride tube elements includes an open top and a titanium nitride bottom. Each of the titanium nitride tube elements has titanium nitride tubular middle portion that extends from the open top to the titanium nitride bottom.
    Type: Application
    Filed: May 2, 2022
    Publication date: October 20, 2022
    Inventors: Vladimir M. Shalaev, Zhaxylyk Kudyshev, Alexandra Boltasseva, Alberto Naldoni, Alexander Kildishev, Luca Mascaretti, Stêphán Kment, Radek Zboril, Jeong Eun Yoo, Patrik Schmuki
  • Solar thermoplasmonic nanofurnaces and method for making and using same
    Patent number: 11319640
    Abstract: Titanium nitride (TiN) nanofurnaces are fabricated in a method that involves anodization of a titanium (Ti) foil to form TiO2 nanocavities. After anodization, the TiO2 nanocavities are converted to TiN at 600° C. under ammonia flow. The resulting structure is an array of refractory (high-temperature stable) subwavelength TiN cylindrical cavities that operate as plasmonic nanofurnaces capable of reaching temperatures above 600° C. under moderate concentrated solar irradiation. The nanofurnaces show near-unity solar absorption in the visible and near infrared spectral ranges and a maximum thermoplasmonic solar-to-heat conversion efficiency of 68 percent.
    Type: Grant
    Filed: May 3, 2020
    Date of Patent: May 3, 2022
    Assignee: Purdue Research Foundation
    Inventors: Vladimir M. Shalaev, Zhaxylyk Kudyshev, Alexandra Boltasseva, Alberto Naldoni, Alexander Kildishev, Luca Mascaretti, Ŝtêphán Kment, Radek Zbo{circumflex over (r)}il, Jeong Eun Yoo, Patrik Schmuki
  • Solar Thermoplasmonic Nanofurnaces and Method for Making and Using Same
    Publication number: 20200347508
    Abstract: Titanium nitride (TiN) nanofurnaces are fabricated in a method that involves anodization of a titanium (Ti) foil to form TiO2 nanocavities. After anodization, the TiO2 nanocavities are converted to TiN at 600° C. under ammonia flow. The resulting structure is an array of refractory (high-temperature stable) subwavelength TiN cylindrical cavities that operate as plasmonic nanofurnaces capable of reaching temperatures above 600° C. under moderate concentrated solar irradiation. The nanofurnaces show near-unity solar absorption in the visible and near infrared spectral ranges and a maximum thermoplasmonic solar-to-heat conversion efficiency of 68 percent.
    Type: Application
    Filed: May 3, 2020
    Publication date: November 5, 2020
    Inventors: Vladimir M. Shalaev, Zhaxylyk Kudyshev, Alexandra Boltasseva, Alberto Naldoni, Alexander Kildishev, Luca Mascaretti, Stephán Kment, Radek Zboril, Jeong Eun Yoo, Patrik Schmuki
  • Selective electrochemical process for creating semiconductor nano- and micro-patterns
    Patent number: 6518603
    Abstract: A porous semiconductor is created by electrochemical etching. Selected regions of a semiconductor are first treated to reduce the threshold potential at which pore formation occurs, and then an electrochemical etch is carried out on the semicnoductor at a potential at least equal to the reduced threshold potential for the selected regions and less than the threshold potential for untreated regions. The selective treatment preferably involves implantation with the same ions as the semiconductor, i.e. Si ions for silicon. The treatment results in the formation of highly defined etch patterns or patterns of porous material depending on the process conditions.
    Type: Grant
    Filed: October 25, 2000
    Date of Patent: February 11, 2003
    Assignee: National Research Council of Canada
    Inventors: Patrik Schmuki, Lynden Erickson, David J. Lockwood
  • Selective electrochemical process for creating semiconductor nano-and micro-patterns
    Patent number: 6284671
    Abstract: A porous semiconductor is created by electrochemical etching. Selected regions of a semiconductor are first treated to reduce the threshold potential at which pore formation occurs, and then an electrochemical etch is carried out on the semiconductor at a potential at least equal to the reduced threshold potential for the selected regions and less than the threshold potential for untreated regions. The selective treatment preferably involves implantation with the same ions as the semiconductor, i.e. Si ions for silicon. The treatment results in the formation of highly defined etch patterns or patterns of porous material depending on the process conditions.
    Type: Grant
    Filed: November 19, 1998
    Date of Patent: September 4, 2001
    Assignee: National Research Council of Canada
    Inventors: Patrik Schmuki, Lynden Erickson, David J. Lockwood