Patents by Inventor Patrik Svensson
Patrik Svensson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9035278Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.Type: GrantFiled: September 25, 2012Date of Patent: May 19, 2015Assignee: GLO ABInventors: Patrik Svensson, Linda Romano, Sungsoo Yi, Olga Kryliouk, Ying-Lan Chang
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Patent number: 9012887Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device including a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.Type: GrantFiled: October 24, 2011Date of Patent: April 21, 2015Assignee: Qunano ABInventors: Lars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
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Patent number: 8901534Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.Type: GrantFiled: December 5, 2012Date of Patent: December 2, 2014Assignee: GLO ABInventor: Patrik Svensson
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Publication number: 20140312381Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: ApplicationFiled: July 3, 2014Publication date: October 23, 2014Inventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Patent number: 8807471Abstract: A fishing reel including: a housing with a side plate, a gear stud rotatably disposed relative to the housing to rotate about a first axis, and a main gear concentrically disposed relative to the gear stud. The main gear interacts with another gear to rotate a spool about a second axis. The reel also includes a drag stack concentrically disposed relative to the gear stud, a one way clutch concentrically disposed relative to the gear stud, and a clutch sleeve disposed within and engaging the one-way clutch. The clutch sleeve is constrained to rotate with the gear stud. The reel further includes an adjustment member disposed outside the housing that provides a user interface for adjusting a desired drag, and a drag adjuster that transmits drag adjustments from the adjustment member to the drag stack without axially displacing the clutch sleeve.Type: GrantFiled: February 3, 2012Date of Patent: August 19, 2014Assignee: Pure Fishing, Inc.Inventors: Patrik Svensson, Peter Yaskowski
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Patent number: 8796119Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: GrantFiled: May 3, 2013Date of Patent: August 5, 2014Assignee: Qunano ABInventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Publication number: 20130200194Abstract: A fishing reel including: a housing with a side plate, a gear stud rotatably disposed relative to the housing to rotate about a first axis, and a main gear concentrically disposed relative to the gear stud. The main gear interacts with another gear to rotate a spool about a second axis. The reel also includes a drag stack concentrically disposed relative to the gear stud, a one way clutch concentrically disposed relative to the gear stud, and a clutch sleeve disposed within and engaging the one-way clutch. The clutch sleeve is constrained to rotate with the gear stud. The reel further includes an adjustment member disposed outside the housing that provides a user interface for adjusting a desired drag, and a drag adjuster that transmits drag adjustments from the adjustment member to the drag stack without axially displacing the clutch sleeve.Type: ApplicationFiled: February 3, 2012Publication date: August 8, 2013Applicant: PURE FISHING, INC.Inventors: Stephan Lawson, Patrik Svensson, Peter Yaskowski
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Patent number: 8455857Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: GrantFiled: September 8, 2011Date of Patent: June 4, 2013Assignee: QuNano ABInventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Patent number: 8350249Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.Type: GrantFiled: September 26, 2011Date of Patent: January 8, 2013Assignee: GLO ABInventor: Patrik Svensson
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Publication number: 20130001511Abstract: The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.Type: ApplicationFiled: July 2, 2012Publication date: January 3, 2013Applicant: QuNano ABInventors: Bo Pedersen, Lars Samuelson, Jonas Ohlsson, Patrik Svensson
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Patent number: 8227817Abstract: The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.Type: GrantFiled: December 22, 2007Date of Patent: July 24, 2012Assignee: QuNano ABInventors: Bo Pedersen, Lars Samuelson, Jonas Ohlsson, Patrik Svensson
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Publication number: 20120145990Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.Type: ApplicationFiled: October 24, 2011Publication date: June 14, 2012Inventors: Lars SAMUELSON, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
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Publication number: 20110316019Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: ApplicationFiled: September 8, 2011Publication date: December 29, 2011Inventors: Lars Ivar SAMUELSON, Patrik SVENSSON, Jonas OHLSSON, Truls LOWGREN
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Patent number: 8084337Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.Type: GrantFiled: October 27, 2008Date of Patent: December 27, 2011Assignee: QuNano ABInventors: Lars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
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Patent number: 8067299Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: GrantFiled: May 13, 2010Date of Patent: November 29, 2011Assignee: QuNano ABInventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Patent number: 8049203Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: GrantFiled: June 15, 2007Date of Patent: November 1, 2011Assignee: QuNano ABInventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Publication number: 20100252808Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.Type: ApplicationFiled: October 27, 2008Publication date: October 7, 2010Inventors: Lars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
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Publication number: 20100148149Abstract: The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.Type: ApplicationFiled: December 22, 2007Publication date: June 17, 2010Inventors: Bo Pedersen, Lars Samuelson, Jonas Ohlsson, Patrik Svensson
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Publication number: 20080149914Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: ApplicationFiled: June 15, 2007Publication date: June 26, 2008Inventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Publication number: 20050178868Abstract: A fishing reel of the multiplier type has a frame, a shaft rotatably mounted in the frame, a device for braking the shaft, and a line spool mounted on the shaft. A handle is arranged to rotate by a drive mechanism the line spool in a direction of retrieval for rewinding onto the line spool a part, paid out from the line spool, of a line wound onto the same. The line spool is rotatably mounted on the shaft. A freewheeling hub is arranged between the line spool and the shaft so as to allow rotation of the line spool relative to the shaft in the direction of retrieval but prevent rotation of the line spool relative to the shaft in the opposite direction.Type: ApplicationFiled: February 3, 2005Publication date: August 18, 2005Inventor: Patrik Svensson