Patents by Inventor Patrik Svensson

Patrik Svensson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9035278
    Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: May 19, 2015
    Assignee: GLO AB
    Inventors: Patrik Svensson, Linda Romano, Sungsoo Yi, Olga Kryliouk, Ying-Lan Chang
  • Patent number: 9012887
    Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device including a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: April 21, 2015
    Assignee: Qunano AB
    Inventors: Lars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
  • Patent number: 8901534
    Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: December 2, 2014
    Assignee: GLO AB
    Inventor: Patrik Svensson
  • Publication number: 20140312381
    Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
    Type: Application
    Filed: July 3, 2014
    Publication date: October 23, 2014
    Inventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
  • Patent number: 8807471
    Abstract: A fishing reel including: a housing with a side plate, a gear stud rotatably disposed relative to the housing to rotate about a first axis, and a main gear concentrically disposed relative to the gear stud. The main gear interacts with another gear to rotate a spool about a second axis. The reel also includes a drag stack concentrically disposed relative to the gear stud, a one way clutch concentrically disposed relative to the gear stud, and a clutch sleeve disposed within and engaging the one-way clutch. The clutch sleeve is constrained to rotate with the gear stud. The reel further includes an adjustment member disposed outside the housing that provides a user interface for adjusting a desired drag, and a drag adjuster that transmits drag adjustments from the adjustment member to the drag stack without axially displacing the clutch sleeve.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: August 19, 2014
    Assignee: Pure Fishing, Inc.
    Inventors: Patrik Svensson, Peter Yaskowski
  • Patent number: 8796119
    Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: August 5, 2014
    Assignee: Qunano AB
    Inventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
  • Publication number: 20130200194
    Abstract: A fishing reel including: a housing with a side plate, a gear stud rotatably disposed relative to the housing to rotate about a first axis, and a main gear concentrically disposed relative to the gear stud. The main gear interacts with another gear to rotate a spool about a second axis. The reel also includes a drag stack concentrically disposed relative to the gear stud, a one way clutch concentrically disposed relative to the gear stud, and a clutch sleeve disposed within and engaging the one-way clutch. The clutch sleeve is constrained to rotate with the gear stud. The reel further includes an adjustment member disposed outside the housing that provides a user interface for adjusting a desired drag, and a drag adjuster that transmits drag adjustments from the adjustment member to the drag stack without axially displacing the clutch sleeve.
    Type: Application
    Filed: February 3, 2012
    Publication date: August 8, 2013
    Applicant: PURE FISHING, INC.
    Inventors: Stephan Lawson, Patrik Svensson, Peter Yaskowski
  • Patent number: 8455857
    Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: June 4, 2013
    Assignee: QuNano AB
    Inventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
  • Patent number: 8350249
    Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
    Type: Grant
    Filed: September 26, 2011
    Date of Patent: January 8, 2013
    Assignee: GLO AB
    Inventor: Patrik Svensson
  • Publication number: 20130001511
    Abstract: The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.
    Type: Application
    Filed: July 2, 2012
    Publication date: January 3, 2013
    Applicant: QuNano AB
    Inventors: Bo Pedersen, Lars Samuelson, Jonas Ohlsson, Patrik Svensson
  • Patent number: 8227817
    Abstract: The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.
    Type: Grant
    Filed: December 22, 2007
    Date of Patent: July 24, 2012
    Assignee: QuNano AB
    Inventors: Bo Pedersen, Lars Samuelson, Jonas Ohlsson, Patrik Svensson
  • Publication number: 20120145990
    Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
    Type: Application
    Filed: October 24, 2011
    Publication date: June 14, 2012
    Inventors: Lars SAMUELSON, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
  • Publication number: 20110316019
    Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
    Type: Application
    Filed: September 8, 2011
    Publication date: December 29, 2011
    Inventors: Lars Ivar SAMUELSON, Patrik SVENSSON, Jonas OHLSSON, Truls LOWGREN
  • Patent number: 8084337
    Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: December 27, 2011
    Assignee: QuNano AB
    Inventors: Lars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
  • Patent number: 8067299
    Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
    Type: Grant
    Filed: May 13, 2010
    Date of Patent: November 29, 2011
    Assignee: QuNano AB
    Inventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
  • Patent number: 8049203
    Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
    Type: Grant
    Filed: June 15, 2007
    Date of Patent: November 1, 2011
    Assignee: QuNano AB
    Inventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
  • Publication number: 20100252808
    Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
    Type: Application
    Filed: October 27, 2008
    Publication date: October 7, 2010
    Inventors: Lars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
  • Publication number: 20100148149
    Abstract: The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.
    Type: Application
    Filed: December 22, 2007
    Publication date: June 17, 2010
    Inventors: Bo Pedersen, Lars Samuelson, Jonas Ohlsson, Patrik Svensson
  • Publication number: 20080149914
    Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
    Type: Application
    Filed: June 15, 2007
    Publication date: June 26, 2008
    Inventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
  • Publication number: 20050178868
    Abstract: A fishing reel of the multiplier type has a frame, a shaft rotatably mounted in the frame, a device for braking the shaft, and a line spool mounted on the shaft. A handle is arranged to rotate by a drive mechanism the line spool in a direction of retrieval for rewinding onto the line spool a part, paid out from the line spool, of a line wound onto the same. The line spool is rotatably mounted on the shaft. A freewheeling hub is arranged between the line spool and the shaft so as to allow rotation of the line spool relative to the shaft in the direction of retrieval but prevent rotation of the line spool relative to the shaft in the opposite direction.
    Type: Application
    Filed: February 3, 2005
    Publication date: August 18, 2005
    Inventor: Patrik Svensson