Abstract: The invention relates to a solid-state imaging device in which a light-sensitive element region and a charge transfer region are separately formed on a semiconductor substrate of a first conductivity type by implanting an impurity of a second conductivity type into the substrate. A channel region is formed between these two regions by implanting an impurity of the first conductivity type into the substrate. Next, charge transfer electrodes made of a light-proof material are formed on the light-sensitive element region and the charge transfer region, with insulating films thereunder.An alloy of a high-melting-point metal and silicon is used in the construction of the charge transfer electrodes, and this alloy is subjected to high-temperature processing in an atmosphere of O.sub.2.