Abstract: An interconnect structure is provided by applying a conductive layer (typically one or more metal layers 23,28) over the entire surface of the module (11) to form all of the contacts (19,32) to all of the cells in the module and then scribing the conductive layer into a series of strips using a series of straight high speed laser scribes. The strips are then divided into individual links by scribing transversely to the first scribe direction with the laser turned on and off to cut each alternate stripe. The p-type regions of the cells are contacted through holes (19), n-type regions are contacted through holes (32). A silicon film (12) is separated into cells (35a,b,c,d) by isolation grooves (16). In a first embodiment, every second transverse scribe is offset by one strip such that each strip is cut into links which overlap two links on either side that are offset by a distance equal to half the pitch of the links.

Abstract: A method of texturing a substrate or superstrate support material is provided, in which a thin textured film (32) is applied to the surface of the support material such as glass sheet (11). The dipping process is performed by loading a sheet (50) of the support material (11) into a frame (51) which provides a small number of small area contact points (52, 53) at which the sheet (50) is supported and lowering the frame (51) into texturing solution (59) comprising a mixture (59) of Sol-Gel (61) and texturing particles (62) comprising SiO2 monospheres. The sheet is then withdrawn from the texturing solution and the resultant film allowed to dry. The film is then sintered and the resulting film provides a textured surface suitable for the formation of a photovoltaic device.

Abstract: An interconnect structure is provided by applying a conductive layer (typically one or more metal layers 23,28) over the entire surface of the module (11) to form all of the contacts (19,32) to all of the cells in the module and then scribing the conductive layer into a series of strips using a series of straight high speed laser scribes. The strips are then divided into individual links by scribing transversely to the first scribe direction with the laser turned on and off to cut each alternate stripe. The p-type regions of the cells are contacted through holes (19), n-type regions are contacted through holes (32). A silicon film (12) is separated into cells (35a,b,c,d) by isolation grooves (16). In a first embodiment, every second transverse scribe is offset by one strip such that each strip is cut into links which overlap two links on either side that are offset by a distance equal to half the pitch of the links.

Abstract: A method of texturing a substrate or superstrate support material is provided, in which a thin textured film (32) is applied to the surface of the support material such as glass sheet (11). The dipping process is performed by loading a sheet (50) of the support material (11) into a frame (51) which provides a small number of small area contact points (52, 53) at which the sheet (50) is supported and lowering the frame (51) into texturing solution (59) comprising a mixture (59) of Sol-Gel (61) and texturing particles (62) comprising SiO2 monospheres. The sheet is then withdrawn from the texturing solution and the resultant film allowed to dry. The film is then sintered and the resulting film provides a textured surface suitable for the formation of a photovoltaic device.

Abstract: A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.