Abstract: A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Abstract: Embodiments of the disclosure include a cache array having a plurality of cache sets grouped into a plurality of subsets. The cache array also includes a read line configured to receive a read signal for the cache array and a set selection line configured to receive a set selection signal. The set selection signal indicates that the read signal corresponds to one of the plurality subsets of the cache array. The read line and the set selection line are operatively coupled to the plurality of cache sets and based on the set selection signal the subset that corresponds to the set selection signal is switched.

Abstract: Embodiments of the disclosure include a cache array having a plurality of cache sets grouped into a plurality of subsets. The cache array also includes a read line configured to receive a read signal for the cache array and a set selection line configured to receive a set selection signal. The set selection signal indicates that the read signal corresponds to one of the plurality subsets of the cache array. The read line and the set selection line are operatively coupled to the plurality of cache sets and based on the set selection signal the subset that corresponds to the set selection signal is switched.

Abstract: A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Abstract: A memory array can include a global evaluation circuit, a local evaluation circuit for evaluating a voltage level of a local bit line and a wake transistor configured to connect an output of the local evaluation circuit to a global bit line (GBL) of the global evaluation circuit. The global evaluation circuit can include a holding circuit. The wake transistor can be turned on in response to a read signal, and remain on while the GBL is precharged to a logical “high” voltage. Memory cells connected to the at least one local bit line can be addressed, and the local bit line can be pulled to a logical “low” voltage for a first time period. The GBL can be pulled to a logical low voltage for a second time period, and the holding circuit polarity can be reversed during a third time period.

Abstract: A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Abstract: A memory array can include a global evaluation circuit, a local evaluation circuit for evaluating a voltage level of a local bit line and a wake transistor configured to connect an output of the local evaluation circuit to a global bit line (GBL) of the global evaluation circuit. The global evaluation circuit can include a holding circuit. The wake transistor can be turned on in response to a read signal, and remain on while the GBL is precharged to a logical “high” voltage. Memory cells connected to the at least one local bit line can be addressed, and the local bit line can be pulled to a logical “low” voltage for a first time period. The GBL can be pulled to a logical low voltage for a second time period, and the holding circuit polarity can be reversed during a third time period.

Abstract: A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Abstract: A column access control circuit for generating column write enable outputs with redundancy steering control and bit write control for an integrated circuit chip, and an integrated circuit chip having the same. A column access control circuit may include: a column write enable driver, a redundancy steering logic, and a bit write controller. The column write enable driver may produce column write enable outputs through an output. The column write enable driver is configured to receive certain column interleave write enable and enable column write according to the column interleave write enable received. The redundancy steering logic is configured to receive one or more fuses and skip a damaged column indicated by a corresponding fuse. The bit write controller is configured to receive one or more bit write and provide bit write control according to the one or more bit write received.

Abstract: Embodiments include a high frequency write through memory device including a plurality of memory cells and a plurality of local evaluation circuits. Each of the plurality of local evaluation circuits are coupled to at least one of the plurality of memory cells and are configured to prevent data stored in the coupled memory cells from being written to a latch node during a write through operation.

Abstract: A write block read apparatus for a memory device includes a dynamic read address decoder that receives static read address bits as inputs thereto and having an output used to implement a read operation of a memory location corresponding to the read address bits; a dynamic write address decoder that receives static write address bits as inputs thereto and having an output used to implement a write operation of a memory location corresponding to the write address bits; and a static write address decoder, configured in parallel with the dynamic write address decoder, the static write address decoder configured to receive a portion of the static write address bits as inputs thereto, and wherein the static write address decoder is coupled to the dynamic read address decoder so as to block the read operation upon an address conflict with the write operation.

Abstract: A method of implementing a write block read function for a memory device includes configuring a dynamic read address decoder to receive static read address bits as inputs thereto and to generate an output used to implement a read operation of a memory location corresponding to the read address bits; configuring a dynamic write address decoder to receive static write address bits as inputs thereto and to generate an output used to implement a write operation of a memory location corresponding to the write address bits; and configuring a static write address decoder, in parallel with the dynamic write address decoder, to receive a portion of the static write address bits as inputs thereto, and coupling the static write address decoder to the dynamic read address decoder so as to block the read operation upon an address conflict with the write operation.

Abstract: A write block read apparatus for a memory device includes a dynamic read address decoder that receives static read address bits as inputs thereto and having an output used to implement a read operation of a memory location corresponding to the read address bits; a dynamic write address decoder that receives static write address bits as inputs thereto and having an output used to implement a write operation of a memory location corresponding to the write address bits; and a static write address decoder, configured in parallel with the dynamic write address decoder, the static write address decoder configured to receive a portion of the static write address bits as inputs thereto, and wherein the static write address decoder is coupled to the dynamic read address decoder so as to block the read operation upon an address conflict with the write operation.

Abstract: A method of implementing a write block read function for a memory device includes configuring a dynamic read address decoder to receive static read address bits as inputs thereto and to generate an output used to implement a read operation of a memory location corresponding to the read address bits; configuring a dynamic write address decoder to receive static write address bits as inputs thereto and to generate an output used to implement a write operation of a memory location corresponding to the write address bits; and configuring a static write address decoder, in parallel with the dynamic write address decoder, to receive a portion of the static write address bits as inputs thereto, and coupling the static write address decoder to the dynamic read address decoder so as to block the read operation upon an address conflict with the write operation.

Abstract: A technique to generate timing control for an SRAM circuit operating with dual power supplies is provided. A voltage signal is generated by a programmable local clock buffer that receives power from a first voltage level. The voltage signal is shifted higher by a level shifter that receives power from both the first voltage level and a second voltage level. The voltage signal is delayed by a delay clock chopper circuit that receives power from the second voltage level. The delay clock chopper circuit includes a programmable pulse width variation (PWVAR) circuit that varies the pulse width of the voltage signal. The PWVAR circuit receives power from the second voltage level. The voltage signal drives a global bitline of the SRAM. The voltage signal has timing sensitive to both the first and second voltage levels. The voltage signal has its pulse width sensitive to the second voltage level.

Abstract: Embodiments of the disclosure include a cache array having a plurality of cache sets grouped into a plurality of subsets. The cache array also includes a read line configured to receive a read signal for the cache array and a set selection line configured to receive a set selection signal. The set selection signal indicates that the read signal corresponds to one of the plurality subsets of the cache array. The read line and the set selection line are operatively coupled to the plurality of cache sets and based on the set selection signal the subset that corresponds to the set selection signal is switched.

Abstract: A memory apparatus includes a plurality of memory arrays, each memory array including a plurality of memory cells. The apparatus includes a plurality of global bit lines and each one of the global bit lines is connected to a plurality of local bit lines, which are in turn connected to a plurality of memory cells. The apparatus includes a plurality of global bit line (GBL) latches and each GBL latch is located along a separate global bit line to latch a signal along the respective global bit line. The apparatus further includes a plurality of solar bit lines configured to connect the global bit lines to an output latch via a plurality of logic gates.

Abstract: Embodiments of the disclosure include a cache array having a plurality of cache sets grouped into a plurality of subsets. The cache array also includes a read line configured to receive a read signal for the cache array and a set selection line configured to receive a set selection signal. The set selection signal indicates that the read signal corresponds to one of the plurality subsets of the cache array. The read line and the set selection line are operatively coupled to the plurality of cache sets and based on the set selection signal the subset that corresponds to the set selection signal is switched.

Abstract: Embodiments of the disclosure include a high frequency write through memory device including a plurality of memory cells and a plurality of local evaluation circuits. Each of the plurality of local evaluation circuits are coupled to at least one of the plurality of memory cells and are configured to prevent data stored in the coupled memory cells from being written to a latch node during a write through operation.

Abstract: A memory apparatus includes a plurality of memory arrays, each memory array including a plurality of memory cells. The apparatus includes a plurality of global bit lines and each one of the global bit lines is connected to a plurality of local bit lines, which are in turn connected to a plurality of memory cells. The apparatus includes a plurality of global bit line (GBL) latches and each GBL latch is located along a separate global bit line to latch a signal along the respective global bit line. The apparatus further includes a plurality of solar bit lines configured to connect the global bit lines to an output latch via a plurality of logic gates.