Abstract: In an image sensor having a plurality of photodiodes, subsets of photodiodes share a common node for signals to be sent to an amplifier. Within each subset, each individual photodiode is selected for sending signals to the amplifier by an associated selection device. The selection device is a MOS device operating in a linear region. The subset of photodiodes share a common “fill and spill” or “bucket brigade” transfer circuit to the amplifier, the transfer circuit including at least one MOS device which operates in a subthreshold region.

Abstract: An architecture and manufacturing method for photosensitive chips, such as used in office equipment and digital cameras, involves creating grooves between chip areas in a wafer, and then placing a light-transmissive planar layer over the main surface of the wafer. The planar layer, which may be acrylic-based, creates a substantially planar surface over both the photosites in the chip areas and the grooves. The planar layer in turn supports one or more light-transmissive filtering layers. The arrangement avoids damage to the filtering layers when the wafer is diced along the grooves.

Abstract: The present disclosure relates that constraining a substrate into a convex arc prior to mounting and affixing of any chips, allows those chips to achieve exemplary final chip-to-chip abutment when the substrate is released and allowed to return to stasis. This is particularly of use where there are any intervening thermal cycles, and the thermal temperature coefficients of expansion for the chip/die and any substrate/mount are significantly different. This will allow the utilization of otherwise more desirable materials for the substrate in spite of some mismatch in thermal coefficients that may exist between the substrate and chips.

Abstract: A photosensitive imaging device for recording images across the entire visible spectrum includes a set of photosensors which have a peak response around the orange part of the spectrum, about 600 nm. The peak response is obtained by combining responses of, in one case, photosensors associated with a filter which admits red or infrared wavelengths and longer and photosensors associated with a filter which admits orange wavelengths and longer. In another case, the photosensor is structured to attenuate longer wavelengths, which, in combination with a filter which admits orange and longer wavelengths, can simulate a peak behavior around the orange part of the spectrum.

Abstract: A CMOS-based photosensor array, having a plurality of photodiodes therein, includes a spillover protection circuit associated with each photodiode. The spillover protection circuit causes a potential to be applied to a photodiode in response to a charge spillover or “blooming” condition. The spillover protection device is momentarily disabled whenever a bias charge is injected onto the photodiode by the transfer circuit. Also, a reference voltage applied to the gate of a transistor forming the spillover protection device is higher than a threshold voltage of the transistor but is lower than a sum of the threshold voltage and a maximum light-intensity signal from the photodiode.

Abstract: In a photosensitive imaging chip, such as employing CCD or CMOS technology, each photosite is electrically isolated from other structures on the chip by a trench. The trench extends through an epitaxial layer of the chip and intersects a heavily-doped substrate layer of the chip by at least 1 &mgr;m. The trench can be formed by plasma etching, and filled with polysilicon.

Abstract: The present invention generally relates to a photosensor array including a plurality of photosites; an amplifier associated with each photosite and including a plurality of transistors, wherein the amplifier includes autozeroing transistors for autozeroing at low power to remove voltage offsets in the amplifier; a transfer circuit associated with each photosite for transferring a charge on the photosite to a reset node interposed between the photosite and amplifier.

Abstract: In a photosensitive device wherein signals are read sequentially from a plurality of photosensors onto a video line, an offset control detects a condition in which the photosensors experience a predetermined number of integration periods without reading out signals onto the video line. In response to such a condition, the offset control resets the offset on the video line.

Abstract: A set of CMOS-based amplifiers amplify signals from a set of photosensors within a large photosensitive imaging device. When the imaging device reads out image signals, each amplifier is selected for operation only within a brief time window when the particular photosensor associated therewith is reading out. Incidental to reading out a signal through a particular amplifier, all nodes which are capacitively coupled to the input node of the amplifier are biased to a known magnitude. In this way, residual charges remaining in the amplifier from a previous readout will not distort subsequent signals read through the amplifier.

Abstract: Geometric configurations for photosites found on photosensitive chips for creating electrical signals from an original image, as would be found, for example, in a digital scanner, copier, facsimile machine, or other document generating or reproducing device. The photosensitive chips are mounted on a substrate to form a photosensitive array in a full width scanner or other photosensitive device. The geometric configurations reduce the Moiré patterns to provide a higher quality image.

Abstract: In a photosensitive device wherein a photodiode is operated by placing an initial fat zero charge thereon before the integration of a light-induced signal, the actual dark level signal created by the fat zero charge is sampled with each readout from the photodiode, and then retransferred to the photodiode. After integration, the sampled dark level is subtracted from the total signal level on the photodiode. In this way both fixed-pattern and thermally-induced noise is obviated.

Abstract: A photosensitive imaging device for recording images across the entire visible spectrum includes a set of photosensors which have a peak response around the orange part of the spectrum, about 600 nm. The peak response is obtained by combining responses of, in one case, photosensors associated with a filter which admits red or infrared wavelengths and longer and photosensors associated with a filter which admits orange wavelengths and longer. In another case, the photosensor is structured to attenuate longer wavelengths, which, in combination with a filter which admits orange and longer wavelengths, can simulate a peak behavior around the orange part of the spectrum.

Abstract: The present disclosure relates that by modifying chip die dicing methodology to a U-groove profile from a V-groove profile by modifying the second etch step to be a dry etch instead of a wet etch results in a direct cost savings by eliminating a more expensive process step, as well as the need for stripping the developed photoresist layer. Furthermore, going to a U-groove profile accomplishes additional indirect and greater cost savings resulting from increased process throughput, improved yield, and reduced metal layer defects.

Abstract: The present disclosure relates that constraining a substrate into a convex arc prior to mounting and affixing of any chips, allows those chips to achieve exemplary final chip-to-chip abutment when the substrate is released and allowed to return to stasis. This is particularly of use where there are any intervening thermal cycles, and the thermal temperature coefficients of expansion for the chip/die and any substrate/mount are significantly different. This will allow the utilization of otherwise more desirable materials for the substrate in spite of some mismatch in thermal coefficients that may exist between the substrate and chips.

Abstract: The present invention generally relates to electrical detection of V-groove width during the fabrication of photosensitive chips, which create electrical signals from an original image, as would be found, for example, in a digital scanner or facsimile machine.

Abstract: A CMOS-based voltage signal amplifier is particularly useful for amplifying signals from a single photodiode, or a small set of photodiodes, within a large photosensitive imaging device. When the imaging device reads out image signals from a large number of photodiodes, each amplifier is selected for operation only within a very brief time window when the particular photodiode associated therewith is reading out. The amplifier of the present design is suitable for rapid power-up and power-down when it is selected and deselected.

Abstract: An electronic photosensitive apparatus, such as an image scanner in a digital copier, uses depleted-gate photosensors or photogates as the photosensitive elements therein. The linearity of the transfer circuit associated with each photogate or set of photogates is improved by placing a bias charge of predetermined magnitude on a phototransfer gate disposed downstream of the photogate prefatory to reading out an image signal from the photogate.

Abstract: A method of fabricating and a wafer having a plurality of photosensor Arrays thereon. And, a method of testing the wafer before the wafer is diced and assembled to form a Silicon photosensor Array which may be combined with other like photosensor arrays to form a full page width image sensor bar. The invention allows checking of every V-groove on every chip. An implanted or diffused region is placed across the V-groove, with electrical connections on both ends of the diffusion. If the V-groove is formed, the diffused region will be broken and the electrical path will be open. A deeper diffusion can be also used to check for incomplete V-grooves. If one end of the electrical path is tied to an existing I/O pad on the chip and the other end to ground, this path will have no effect on the input resistance if the V-groove is formed. There will be a small, but acceptable, increase in input capacitance.

Abstract: A method of fabricating and a wafer having a plurality of photosensor Arrays thereon. And, a method of testing the wafer before the wafer is diced and assembled to form a Silicon photosensor Array which may be combined with other like photosensor arrays to form a full page width image sensor bar. The invention allows checking of every V-groove on every chip. An implanted or diffused region is placed across the V-groove, with electrical connections on both ends of the diffusion. If the V-groove is formed, the diffused region will be broken and the electrical path will be open. A deeper diffusion can be also used to check for incomplete V-grooves. If one end of the electrical path is tied to an existing I/O pad on the chip and the other end to ground, this path will have no effect on the input resistance if the V-groove is formed. There will be a small, but acceptable, increase in input capacitance.

Abstract: A photosensitive imaging device for recording images across the entire visible spectrum includes a set of photosensors which have a peak response around the orange part of the spectrum, about 600 nm. The peak response is obtained by combining responses of, in one case, photosensors associated with a filter which admits red or infrared wavelengths and longer and photosensors associated with a filter which admits orange wavelengths and longer. In another case, the photosensor is structured to attenuate longer wavelengths, which, in combination with a filter which admits orange and longer wavelengths, can simulate a peak behavior around the orange part of the spectrum.