Abstract: An improved laser trimming technique allows for a portion of the laser energy to always be on a path length for creating a constructive node independently of the oxide thickness. This improvement is accomplished by forming steps in the reflective silicon that ensure constructive nodes (or prevents the formation of destructive nodes) at the thin film plane. The steps are formed using any of the following techniques: shallow trench isolation, a separate etch step, or LOCOS.

Abstract: A method for releasing a structure from contact with a substrate in a micromechanical device includes the step of irradiating the structure with energy having parameters selected to produce a thermal gradient normal to the surface of the structure which causes upward bowing and release of the structure from the substrate. Preferably, the structure is irradiated with laser energy and, more preferably, the structure is irradiated with pulsed laser energy. The temperature gradient creates a strain gradient, due to thermal expansion, which causes the structure to bow upwardly. Support elements react and hold the structure up after the thermal gradient has disappeared.

Abstract: A method for separating individual dies from a wafer in which the wafer is adhered to a plastic film on a film carrier with the circuit side of the wafer facing the film and with circuit components exposed through a hole in the film. In this manner, the circuitry is protected from dust, and trauma from the sawing and cleaning processes because the circuitry is sealed between the film and the non-circuit side of the wafer.

Abstract: Process of making an IC chip with thin film resistors, and IC chips made by such process, wherein a chip substrate first is covered with layers of thin film and interconnect material (with an intermediate barrier layer if needed), such layers being etched away in predetermined regions in accordance with the metal interconnect pattern, the remaining layered material being aligned vertically, and thereafter, in a section of the remaining material, etching away the interconnect material (and barrier material if used) to expose the thin film material to form a thin film resistor which is self-aligned withe the adjoining sections of interconnect conductors. The material in the predetermined regions may be etched by a dry-etch (plasma) or by a wet-etch.

Abstract: A method of manufacturing an integrated circuit chip utilizing a two-step process for converting an ordinary photoresist material to a useful dielectric. This is done by exposing the photoresist to an xenon flash lamp and then baking it at a high temperature. The converted photoresist is used as a permanent dielectric layer in the integrated chip.