Abstract: A use composition monitor determines the concentration of peracid and/or peroxide in a use composition using a kinetic assay procedure. A sample mixture containing a sample of the use composition, a diluent and at least one reagent is prepared and analyzed using, for example, an optical detector. Response data obtained by the detector is used to determine the concentrations of peracid and/or peroxide in the use composition based upon an evaluation function determined by a calibration method. The calibration method includes determining coefficients of the evaluation function based upon known concentrations, and measured response data of calibration samples.

Abstract: A multi-channel device includes up to three channels for optical testing of liquid samples. The liquid sample(s) may include surface water, drinking water, processed water or the like. The multi-channel device may include a turbidity channel and a color channel that measure turbidity and color, respectively, of a liquid sample using spectrographic analysis. The multi-channel device may also include a colorimetric channel that measures the concentration of various analytes in a liquid sample, such as free chlorine, total chlorine, copper and phosphate.

Abstract: An optical detection sensor detects presence or absence of a product within a fluid delivery medium. An emitter directs radiation into the fluid delivery medium. Each of a plurality of detectors detects light within an associated one of a plurality of wavelength ranges transmitted through the fluid delivery medium. The output of each detector is further associated with at least one out-of-product threshold. A controller may further combine detector outputs, such as by multiplication, summation, or other mathematical operation, to produce additional measures of product presence or absence. Each combination output is also associated with at least one out-of-product threshold. The controller compares the output of each detector with the associated out-of-product threshold(s) and compares each combination output with the associated out-of-product threshold(s) to determine presence or absence of product within the fluid delivery medium.

Abstract: Methods are provided for cleaning a microelectronic device, and one method includes providing a substrate having a patterned SOG/anti-reflective material; performing a process to cure the patterned SOG/anti-reflective material; and performing a cleaning process to remove the cured SOG/anti-reflective material. An apparatus for cleaning a microelectronic device is provided that includes a processing chamber; means for performing a SOG/anti-reflective material curing process within the processing chamber, means for performing a cleaning process within the processing chamber and means for venting the processing chamber.

Abstract: A UV absorption spectrometer includes a housing, a controller, and a sensor unit including an ultraviolet light source, an analytical area in an analytical cell or in running water or gaseous medium, and an UV wavelength separator including a UV detector. An ultraviolet light in a wavelength range of 200-320 nm emits from the light source through the analytical area to the wavelength separator, and the controller transforms output signals from the UV detector into absorbance values or optical densities for two or more wavelengths in the wavelength range, calculates differences of said absorbance values or optical densities, determines a concentration of a chemical in the solution with calibration constants found for a known concentration of the chemical and said differences of said absorbance values or optical densities.

Abstract: An ultraviolet (UV) fluorometric sensor measures a chemical concentration in a sample based on the measured fluorescence of the sample. The sensor includes a controller, at least one UV light source, and at least one UV detector. The sensor emits UV light in a wavelength range of 245-265 nm from the light source through the sample in an analytical area. The UV detector measures the fluorescence emission from the sample. The controller transforms output signals from the UV detector into fluorescence values or optical densities for one or more wavelengths in the wavelength range of 265-340 nm. The controller calculates the chemical concentration of the chemical in the sample based on the measured fluorescence emissions.

Abstract: A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS) and chlorotrimethylsilane (TMCS) and combinations thereof. The silicon oxide-based low-k material, in accordance with embodiments of the invention, is maintained at temperatures in a range of 40 to 200 degrees Celsius, and preferably at a temperature of about 150 degrees Celsius, and at pressures in a range of 1,070 to 9,000 psi, and preferably at a pressure of about 3,000 psi, while being exposed to the supercritical passivating solution. In accordance with further embodiments of the invention, a silicon oxide-based low-k material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.

Abstract: A UV absorption spectrometer includes a housing, a controller, and a sensor unit including an ultraviolet light source, an analytical area in an analytical cell or in running water or gaseous medium, and an UV wavelength separator including a UV detector. An ultraviolet light in a wavelength range of 200-320 nm emits from the light source through the analytical area to the wavelength separator, and the controller transforms output signals from the UV detector into absorbance values or optical densities for two or more wavelengths in the wavelength range, calculates differences of said absorbance values or optical densities, determines a concentration of a chemical in the solution with calibration constants found for a known concentration of the chemical and said differences of said absorbance values or optical densities.

Abstract: A device, method, and system for treating low-k dielectric material films to reduce damage during microelectronic component cleaning processes is disclosed. The current invention cleans porous low-k dielectric material films in a highly selectivity with minimal dielectric material damage by first treating microelectronic components to a passivating process followed by a cleaning solution process.

Abstract: Methods are provided for cleaning a microelectronic device, and one method includes providing a substrate having a patterned SOG/anti-reflective material; performing a process to cure the patterned SOG/anti-reflective material; and performing a cleaning process to remove the cured SOG/anti-reflective material. An apparatus for cleaning a microelectronic device is provided that includes a processing chamber; means for performing a SOG/anti-reflective material curing process within the processing chamber, means for performing a cleaning process within the processing chamber and means for venting the processing chamber.

Abstract: An apparatus for developing a polymeric film without the need for a water rinse step is disclosed. An object having a surface supporting a polymeric film is placed onto a support region within a pressure chamber of the apparatus. A fluid and developer is introduced into the pressure chamber and the object is processed at supercritical conditions to develop the polymeric film such that the polymeric film is not substantially deformed. The pressure chamber is then vented.

Abstract: A method of removing post-etch residue from a patterned low-k dielectric layer is disclosed. The low-k dielectric layer preferably comprises a porous silicon oxide-based material with the post-etch residue thereon. The post-etch residue is a polymer, a polymer contaminated with an inorganic material, an anti-reflective coating and/or a combination thereof. In accordance the method of the present invention, the post-etch residue is removed by treating the patterned low-k dielectric layer to a cleaning solution comprising supercritical carbon dioxide and an amount of an ionic fluid that preferably includes a salt with cyclic a nitrogen cation structure, such as an imidazolium or pyridinium ion, and a suitable anion, including but not limited to, a chloride, a bromide, a tetrafluoroborate, a methyl sulfate and a hexafluorophosphate anion.

Abstract: A method for drying an object, having a polymeric film, wherein the object is submerged in a rinse liquid. The object is removed from the rinse liquid and the object is placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object. The density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force. The object is removed from the solvent bath. A drying process is performed.

Abstract: A method of developing a polymeric film without the need for a water rinse step. An object having a surface supporting a polymeric film is placed onto a support region within a pressure chamber. A fluid and developer is introduced into the pressure chamber and the object is processed at supercritical conditions to develop the polymeric film such that the polymeric film is not substantially deformed. The pressure chamber is then vented.

Abstract: A method of developing a polymeric film without the need for a water rinse step. An object having a surface supporting a polymeric film is placed onto a support region within a pressure chamber. A fluid and developer is introduced into the pressure chamber and the object is processed at supercritical conditions to develop the polymeric film such that the polymeric film is not substantially deformed. The pressure chamber is then vented.

Abstract: A method is disclosed for decontaminating a supercritical processing apparatus and/or wafers after a wafer cleaning step. In accordance the embodiments of the invention, a supercritical cleaning step utilizes a surfactant to clean a wafer and uses a supercritical rinse solution in a post-cleaning step to decontaminate the supercritical processing apparatus, the wafer or both from processing residues. In accordance with further embodiments of the invention, supercritical rinse solutions are used to cure processing surfaces of the supercritical processing apparatus after the supercritical processing apparatus is serviced or when replacement parts are installed.

Abstract: A method of cleaning a surface of an object is disclosed. The object is placed onto a support region within a pressure chamber. The pressure chamber is then pressurized. A cleaning process is performed. A series of decompression cycles are performed. The pressure chamber is then vented.

Abstract: A method for drying an object, having a polymeric film, wherein the object is submerged in a rinse liquid. The object is removed from the rinse liquid and the object is placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object. The density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force. The object is removed from the solvent bath. A drying process is performed.

Abstract: A device, method, and system for treating low-k dielectric material films to reduce damage during microelectronic component cleaning processes is disclosed. The current invention cleans porous low-k dielectric material films in a highly selectivity with minimal dielectric material damage by first treating microelectronic components to a passivating process followed by a cleaning solution process.