Patents by Inventor Paul A. Tiner

Paul A. Tiner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for reducing dopant loss for semiconductor devices
    Publication number: 20030129804
    Abstract: A method of forming a semiconductor device includes doping at least one region of an at least partially formed semiconductor device. The method further includes depositing at least one spacer layer outwardly from the at least one region of the at least partially formed semiconductor device. The at least one deposited spacer layer is formed in an environment that substantially minimizes dopant loss and deactivation in the at least one region of the at least partially formed semiconductor device.
    Type: Application
    Filed: May 14, 2002
    Publication date: July 10, 2003
    Inventors: Manoj Mehrotra, Wayne A. Bather, Reji K. Koshy, Amitabh Jain, Mark S. Rodder, Rajesh B. Khamankar, Paul A. Tiner, Rick L. Wise, Darin K. Wedel
  • Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agent
    Patent number: 6423648
    Abstract: A method of forming an ultra-thin gate oxide (14) for a field effect transistor (10). The gate oxide (14) is formed by combining an oxidizing agent (e.g., N2O, CO2) with an etching agent (e.g., H2) and adjusting the partial pressures to controllably grow a thin (˜12 Angstroms) high quality oxide (14).
    Type: Grant
    Filed: December 14, 2000
    Date of Patent: July 23, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Ming Hwang, Paul Tiner, Sunil Hattangady
  • Controllable oxidation technique for high quality ultrathin gate oxide formation
    Patent number: 6352941
    Abstract: A method of forming an ultra-thin gate oxide (14) for a field effect transistor (10). The gate oxide (14) is formed by combining an oxidizing agent (e.g., N2O, CO2) with an etching agent (e.g., H2) and adjusting the partial pressures to controllably grow a thin (˜12 Angstroms) high quality oxide (14).
    Type: Grant
    Filed: July 8, 1999
    Date of Patent: March 5, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Ming Hwang, Paul Tiner, Sunil Hattangady
  • Controllable oxidation technique for high quality ultra-thin gate oxide
    Publication number: 20010001074
    Abstract: A method of forming an ultra-thin gate oxide (14) for a field effect transistor (10). The gate oxide (14) is formed by combining an oxidizing agent (e.g., N2O, CO2) with an etching agent (e.g., H2) and adjusting the partial pressures to controllably grow a thin (˜12 Angstroms) high quality oxide (14).
    Type: Application
    Filed: December 14, 2000
    Publication date: May 10, 2001
    Inventors: Ming Hwang, Paul Tiner, Sunil Hattangady