Abstract: Selective electrical connections between an electronic component and a test substrate are made using an electrical conductive material. The conductive material of the present invention is a dissolvable material, allowing for rework and repair of a wafer at the wafer-level, and retesting at the wafer-level. In addition, the conductive material may also be used in a permanent package, since the conductive material of the present invention provides complete electrical conductivity and connection between the electronic component and the substrate.

Abstract: A method of selectively and simultaneously depositing a non-reactive material such as a polyimide polymer to vertical sidewalls of a mesa-like structure is provided. The method of the present invention is useful in providing a modified mesa-like structure which prevents the flow of a reactive material along the vertical sidewalls of the mesa-like structure.

Abstract: A method of selectively and simultaneously depositing a non-reactive material such as a polyimide polymer to vertical sidewalls of a mesa-like structure is provided. The method of the present invention is useful in providing a modified mesa-like structure which prevents the flow of a reactive material along the vertical sidewalls of the mesa-like structure.

Abstract: A structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

Abstract: An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al-Cu and interlayer contact regions or studs of Al.sub.2 Cu between patterned interconnect layers. The invention overcomes the problem of electromigration at high current density in the interconnect structure by providing a continuous path for Cu and/or Al atoms to move in the interconnect structure.

Abstract: A process for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

Abstract: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.

Abstract: A low copper concentration multilayered, device interconnect metallurgy, comprises an aluminum-copper (<2 weight percent copper) conductor having formed on one of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum from the aluminum-copper conductor. The intermetallic compound is formed so as to contain only the single phase line compound of the intermetallic compound.

Abstract: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.

Abstract: A sputtered low copper concentration multilayered, device interconnect metallurgy structure is disclosed herein. The interconnect metallization structure comprises a sputtered aluminum-copper (<2) weight percent copper conductor. In the preferred embodiment, the AlCu conductor has formed on one or both of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum. The Group IVA metal is deposited by sputtering. Optionally, onto said top intermetallic layer is further deposited a non-reflective, non-corrosive, etch-stop, capping layer.

Abstract: A method for forming contact studs to connect the substrate component devices to the overlying wiring patterns is disclosed herein. The contact studs are formed by a combination of blanket depositing an adhesive and reactive layer into the contact opening. Onto said adhesive and reactive layer is deposited a seed layer and said contact stud is completed by filling the contact opening with a third metal layer. Preferably, the adhesive and reactive layer is a transition metal and the seen and fillter layers are refractory metals.

Abstract: A method for forming contact studs to connect the substrate component devices to the overlying wiring patterns is disclosed herein. The contact studs are formed by a combination of blanket depositing an adhesive and reactive layer into the contact opening. Onto said adhesive and reactive layer is deposited a seed layer and said contact stud is completed by filling the contact opening with a third metal layer. Preferably, the adhesive and reactive layer is a transistion metal and the seed and filler layers are refractory metals.

Abstract: An integrated circuit chip including a first and a higher second surface levels with an abrupt sidewall step transition therebetween, and having a first layer of a first conductive material disposed over the first surface level and over the second surface level, but terminating on the first surface level in a first end portion which extends up to but does not touch the sidewall. This end portion comprises a conductive material which has been converted to an insulator. A second layer of a second conductive material is disposed on top of the first conductive layer with essentially no conductive material conversion to insulator therein adjacent to the abrupt sidewall transition. In a preferred embodiment, the conductive material is an alloy of aluminum and the end portion is aluminum oxide.

Abstract: In the process of braze attachment of electronic package members, such as attaching metallic coated connector pins to a multilayer ceramic substrate, contact areas of the substrate are formed by sequential coatings of molybdenum and nickel, which are heated to diffuse the nickel. A pure gold paste is applied by screen printing, for example, followed by the step of firing to burn out the paste binder and to sinter the pure gold particles onto a dense low porosity structure. The sintering operation converts the Ni film into a continuous Au-Ni solid solution. During pin braze, Ni-Sn intermetallics are dispersed in a gold rich matrix of the Au-Ni solid solution.

Abstract: Apparatus in a vacuum deposition system positions a workpiece holder in substantial alignment with a source of material to be deposited onto a work piece affixed to the workpiece holder. The apparatus also rotates the workpiece holder about the deposition source and linearly drives the workpiece holder to varying distances from the deposition source. The apparatus used to drive the workpiece holder is sealably mounted atop an opening in the vacuum chamber. The apparatus enables multiple source depositions to be carried out consecutively without accessing the vacuum chamber. By aligning the workpiece holder over the deposition source, nonuniform deposition onto the workpiece is substantially eliminated.

Abstract: A method for forming thin film patterns in the fabrication of integrated circuits utilizing a lift-off mask in an inverse vertical relationship with the desired metal film. The method involves the preliminary blanket deposition of the metal in-point, followed by a coating of a patterned lift-off mask over which is blanket coated a dry-etch resistant material with subsequent removal of the lift-off mask, and dry etching of the exposed metal film. In one embodiment the dry-etch mask can comprise a diverse metal layer when a dry-etch ambient is employed which is passive to the diverse metal. In another embodiment, where dry etch ambients are employed which are corrosive to the diverse metal which is desired in the final structure, it can be covered with a blanket layer of any convenient dry-etch resistant material, such as magnesium oxide, prior to removal of the lift-off mask.