Abstract: A method for improving both the microscopic and macroscopic uniformity of materials during etching is disclosed herein. These improvements may be accomplished through the formation and dissolution of thin, self-limiting layers on the material surface by the use of wet atomic layer etching (ALE) techniques. For etching of polycrystalline materials, these self-limiting reactions can be used to prevent this roughening of the surface during etching. Thus, as disclosed herein, a wet ALE process uses sequential, self-limiting reactions to first modify the surface layer of a material and then selectively remove the modified layer.

Abstract: A method and a system for etching of semiconductor substrates, and particularly, wet etching of wafers. The etch rate of liquid solutions applied on the wafer is adjusted by irradiating the liquid solutions with spatially varied light intensity. Photo-reactive agents are added to the liquid solutions, the agents including photo acids, photo bases and photo-oxidizers. Illumination of the photo-reactive agents causes increase/decrease of the pH value and oxidation potential value of the liquid solutions.

Abstract: Systems and methods for protocol processing using a systolic array (e.g., programmed in an FPGA). For example, protocol processing is performed for incoming data (e.g., received for storage) prior to encryption and/or sending to a remote storage device (e.g., cloud storage or server).

Abstract: Systems and methods for in-line TCP processing using a systolic array. For example, data received for storage is processed in-line prior to encryption and/or sending to a remote storage device (e.g., cloud storage or server).

Abstract: A method for improving both the microscopic and macroscopic uniformity of materials during etching is disclosed herein. These improvements may be accomplished through the formation and dissolution of thin, self-limiting layers on the material surface by the use of wet atomic layer etching (ALE) techniques. For etching of polycrystalline materials, these self-limiting reactions can be used to prevent this roughening of the surface during etching. Thus, as disclosed herein, a wet ALE process uses sequential, self-limiting reactions to first modify the surface layer of a material and then selectively remove the modified layer.

Abstract: A processing system and platform for improving both the microscopic and macroscopic uniformity of materials during etching is disclosed herein. These improvements may be accomplished through the formation and dissolution of thin, self-limiting layers on the material surface by the use of wet atomic layer etching (ALE) techniques. For etching of polycrystalline materials, these self-limiting reactions can be used to prevent this roughening of the surface during etching. Thus, as disclosed herein, a wet ALE process uses sequential, self-limiting reactions to first modify the surface layer of a material and then selectively remove the modified layer.

Abstract: A method and a system for etching of semiconductor substrates, and particularly, wet etching of wafers. The etch rate of liquid solutions applied on the wafer is adjusted by irradiating the liquid solutions with spatially varied light intensity. Photo-reactive agents are added to the liquid solutions, the agents including photo acids, photo bases and photo-oxidizers. Illumination of the photo-reactive agents causes increase/decrease of the pH value and oxidation potential value of the liquid solutions.

Abstract: A method for depositing a functional material on a substrate is disclosed. A plate having a first surface and a second surface is provided. A layer of light scattering material is applied onto the first surface of the plate, and a layer of reflective material is applied onto the second surface of the plate. After a group of wells has been formed on the second surface of the plate, a layer of light-absorbing material is applied on the second surface of the plate. Next, the wells are filled with a functional material. The plate is then irradiated with a pulse of light to heat the light-absorbing material in order to generate gas at an interface between the light-absorbing material and the functional material to release the functional material from the wells onto a receiving substrate.

Abstract: A redox flow battery system including a reactive cell with an anode chamber separated from a cathode chamber separated by an ion-permeable membrane is provided. A catholyte reservoir is connected to the cathode chamber by a catholyte fluid circulation circuit. An anolyte reservoir is connected to the anolyte chamber by an anolyte fluid circulation circuit. Nitrogen sparging of reactive oxygen from the catholyte fluid in the catholyte reservoir prevents the formation of a finely divided solid precipitate in the catholyte fluid. Nitrogen may be provided from an external source of nitrogen. Nitrogen may also be provided by the in situ generation of nitrogen from air.

Abstract: The disclosure relates to an anode or an electrolytic capacitor electrode including an active anode material containing a chalcogen-containing-germanium composition in which the germanium:chalcogen atom ratio is between 80:20 and 98:2. The disclosure also relates to an anode including an active anode material containing a lithium and germanium-containing alloy wherein the lithium:germanium atom ratio is 22:5 or less. The anode also includes a non-cycling lithium chalcogenide. The disclosure further relates to lithium ion batteries including such anodes. The disclosure additionally relates to capacitor electrodes containing similar materials and capacitors containing such electrodes.

Abstract: A redox flow battery system including a reactive cell with an anode chamber separated from a cathode chamber separated by an ion-permeable membrane. A catholyte reservoir is connected to the cathode chamber by a catholyte fluid circulation circuit. An anolyte reservoir is connected to the anolyte chamber by an anolyte fluid circulation circuit. Nitrogen sparging of reactive oxygen from the catholyte fluid in the catholyte reservoir prevents the formation of a finely divided solid precipitate in the catholyte fluid. Nitrogen may be provided from an external source of nitrogen. Nitrogen may also be provided by the in situ generation of nitrogen from air.

Abstract: The disclosure relates to an anode or an electrolytic capacitor electrode including an active anode material containing a chalcogen-containing-germanium composition in which the germanium:chalcogen atom ratio is between 80:20 and 98:2. The disclosure also relates to an anode including an active anode material containing a lithium and germanium-containing alloy wherein the lithium:germanium atom ratio is 22:5 or less. The anode also includes a non-cycling lithium chalcogenide. The disclosure further relates to lithium ion batteries including such anodes. The disclosure additionally relates to capacitor electrodes containing similar materials and capacitors containing such electrodes.

Abstract: Regenerative shock absorber. A piston is disposed for reciprocating motion within a cylinder as a vehicle's suspension system deflects. Hydraulic fluid passes through an hydraulic motor to turn its shaft. The hydraulic motor shaft is connected to an electric generator to generate electricity. Flow characteristics of hydraulic circuits are selected to provide suspension system damping for appropriate wheel control.

Abstract: Regenerative shock absorber. A piston is disposed for reciprocating motion within a cylinder as a vehicle's suspension system deflects. Hydraulic fluid passes through an hydraulic motor to turn its shaft. The hydraulic motor shaft is connected to an electric generator to generate electricity. Flow characteristics of hydraulic circuits are selected to provide suspension system damping for appropriate wheel control.

Abstract: A rotary kiln has a cylindrical casing interrupted along its length by annular members which are welded into and constitute part of the casing and which are provided with outwardly projecting, profiled webs adapted for attachment to the mounting structure of cooler tubes which are arranged in planetary manner about the casing.

Abstract: This invention relates to a rotary tube for heat exchange between solid material and gas, with satellite cooler tubes uniformly distributed around the periphery of the rotary tube in the vicinity of the exit end thereof, the satellite tubes being supported over at least one longitudinal section by a group of support elements uniformly distributed on the outside of the rotary tube casing.