Patents by Inventor Paul Albert Kohl

Paul Albert Kohl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
    Patent number: 6888249
    Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap.
    Type: Grant
    Filed: August 25, 2003
    Date of Patent: May 3, 2005
    Assignee: Georgia Tech Research Corporation
    Inventors: Paul Albert Kohl, Sue Ann Bidstrup Allen, Clifford Lee Henderson, Hollie Ann Reed, Dhananjay M. Bhusari
  • Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
    Publication number: 20040038513
    Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.
    Type: Application
    Filed: August 25, 2003
    Publication date: February 26, 2004
    Inventors: Paul Albert Kohl, Sue Ann Bidstrup Allen, Clifford Lee Henderson, Hollie Ann Reed, Dhananjay M. Bhusari
  • Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same
    Patent number: 6610593
    Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap.
    Type: Grant
    Filed: August 31, 2001
    Date of Patent: August 26, 2003
    Assignee: Georgia Tech Research Corporation
    Inventors: Paul Albert Kohl, Sue Ann Bidstrup Allen, Clifford Lee Henderson, Hollie Anne Reed, Dhananjay M. Bhusari
  • Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
    Publication number: 20020081787
    Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.
    Type: Application
    Filed: August 31, 2001
    Publication date: June 27, 2002
    Inventors: Paul Albert Kohl, Sue Ann Bldstrup Allen, Clifford Lee Henderson, Hollie Anne Reed, Dhananjay M. Bhusari