Abstract: A pulse modulator comprises a solid state power switch having a source, a drain, a gate and a separate gate drive connected to ground. One pulse modulator comprises a plurality of stages connected as an induction adder. Each stage includes a plurality of cells and at least some of the cells each include a solid state power switch having a source, a drain, a gate and a separate gate drive connected to ground to control the discharge of a capacitor. In one embodiment the solid state power switch is a power MOSFET.

Abstract: A pulse modulator comprises a solid state power switch having a source, a drain, a gate and a separate gate drive connected to ground. One pulse modulator comprises a plurality of stages connected as an induction adder. Each stage includes a plurality of cells and at least some of the cells each include a solid state power switch having a source, a drain, a gate and a separate gate drive connected to ground to control the discharge of a capacitor. In one embodiment the solid state power switch is a power MOSFET.

Abstract: A pulse modulator comprises a solid state power switch having a source, a drain, a gate and a separate gate drive connected to ground. One pulse modulator comprises a plurality of stages connected as an induction adder. Each stage includes a plurality of cells and at least some of the cells each include a solid state power switch having a source, a drain, a gate and a separate gate drive connected to ground to control the discharge of a capacitor. In one embodiment the solid state power switch is a power MOSFET.

Abstract: A high voltage switch is provided, comprising a pair of electrodes housed within a high pressure gas vessel and separated by a nominal distance D. At least one of the electrodes is provided with raised surface features each having a radius of curvature that is significantly smaller than the electrode separation D. Preferably one of the electrodes is flat-faced. Preferred gas pressures within the pressure vessel are in the range 300 psi to 1200 psi. When used to switch voltages of several hundred kilovolts, an operational life for the electrodes of between 400 and 1000 hours has been achieved.

Abstract: A high voltage switch is provided, comprising a pair of electrodes housed within a high pressure gas vessel and separated by a nominal distance D. At least one of the electrodes is provided with raised surface features each having a radius of curvature that is significantly smaller than the electrode separation D. Preferably one of the electrodes is flat-faced. Preferred gas pressures within the pressure vessel are in the range 300 psi to 1200 psi. When used to switch voltages of several hundred kilovolts, an operational life for the electrodes of between 400 and 1000 hours has been achieved.

Abstract: This invention relates to a method of potting a component, namely encasing a component (110) in a potting compound (112) with, optionally, all or some of the voids in the component also being filled with potting compound. In particular, the present invention relates to potting a component that will be subject to high electric field strengths in use. The method comprises introducing an inert gas into a first pressure vessel (100) containing the component to be potted thereby to create an inert environment, introducing a potting compound into the first pressure vessel and allowing the potting compound to cure in the inert environment.

Abstract: This invention relates to a method of potting a component, namely encasing a component (110) in a potting compound (112) with, optionally, all or some of the voids in the component also being filled with potting compound. In particular, the present invention relates to potting a component that will be subject to high electric field strengths in use. The method comprises introducing an inert gas into a first pressure vessel (100) containing the component to be potted thereby to create an inert environment, introducing a potting compound into the first pressure vessel and allowing the potting compound to cure in the inert environment.