Abstract: Electro-optic, especially electrophoretic, displays are used in variety of architectural and furniture applications, including a tile (100) comprising an electro-optic layer (110) capable of changing the color of the file, front and multiple rear electrodes and a light-transmissive polymeric layer (102), the exposed surface of which is textured to provide a plurality of facets inclined to the plane of the tile (100), the rear electrodes being aligned with the facets. A variable color writable board is also provided.

Abstract: Electro-optic, especially electrophoretic, displays are used in variety of architectural and furniture applications, including a tile (100) comprising an electro-optic layer (110) capable of changing the color of the file, front and multiple rear electrodes and a light-transmissive polymeric layer (102), the exposed surface of which is textured to provide a plurality of facets inclined to the plane of the tile (100), the rear electrodes being aligned with the facets. A variable color writable board is also provided.

Abstract: Electro-optic, especially electrophoretic, displays are used in variety of architectural and furniture applications, including a tile (100) comprising an electro-optic layer (110) capable of changing the color of the file, front and multiple rear electrodes and a light-transmissive polymeric layer (102), the exposed surface of which is textured to provide a plurality of facets inclined to the plane of the tile (100), the rear electrodes being aligned with the facets. A variable color writable board is also provided.

Abstract: Electro-optic, especially electrophoretic, displays are used in variety of architectural and furniture applications, including a tile (100) comprising an electro-optic layer (110) capable of changing the color of the file, front and multiple rear electrodes and a light-transmissive polymeric layer (102), the exposed surface of which is textured to provide a plurality of facets inclined to the plane of the tile (100), the rear electrodes being aligned with the facets. A variable color writable board is also provided.

Abstract: The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer.

Abstract: Compositions and methods of forming and using those compositions are provided herein where the composition comprises at least one oligomer or polymer of Formula I wherein E is a cage compound; each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; A is substituted or unsubstituted aryl with substituted or unsubstituted arylalkynyl group (substituents include hydrogen, halogen, alkyl, phenyl or substituted aryl; and aryl includes phenyl, biphenyl, naphthyl, terphenyl, anthracenyl, polyphenylene, polyphenylene ether, or substituted aryl); h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1.

Abstract: A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

Abstract: The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits having improved electrical properties. A silica dielectric film is formed on a substrate (a) preparing a composition comprising a silicon containing pre-polymer, a metal-ion-free catalyst, and optionally water; (b) coating a substrate with the composition to form a film, (c) crosslinking the composition by first heating the composition in a nitrogen atmosphere at a temperature of from about 750° C. to about 850° C. for from about 30 minutes to about 120 minutes; and thereafter heating the composition in an oxygen atmosphere at a temperature of from about 850° C. to about 1000° C. for from about 30 minutes to about 120 minutes, effective to produce a substantially crack-free, and substantially void-free silica dielectric film having a density of from about 1.8 to about 2.3 g/ml, a dielectric constant of about 4.

Abstract: The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free and substantially void-free silicon polymer film, having a a transparency to light in the range of about 400 nm to about 800 nm of about 95% or more.

Abstract: The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer having at least one organic group, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating the composition at a temperature of about 250° C. or less for about 30 minutes or less, to produce a substantially crack-free and substantially void-free silicon polymer film, which silicon polymer has a weight ratio of organic groups to SiO groups of about 0.15:1 or more, and which silicon containing polymer film has a field breakdown voltage of about 2.5 MV/cm or more and a transparency to light in the range of about 400 nm to about 700 nm of about 95% or more.

Abstract: A method of producing a nanoporous silica dielectric film having improved mechanical strength. A composition is formed which comprises in admixture a porogen, a solvent, a catalyst and a combination of silicon containing pre-polymers.

Abstract: The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 ?/minute or less.

Abstract: Methods are presented herein for forming thermally stable, adhesive, low dielectric constant polyorganosilicon dielectric films for use as semiconductor insulators and as adhesion promoters as and in conjunction with low k materials. Surprisingly, the methods described herein can provide polyorganosilicon materials, coatings and films having very low dielectric constants that are generated from specified polycarbosilane starting materials employing wet coating and standard high energy generating processes, without the need for exotic production techniques or incurring disadvantages found in other low k dielectric film-forming methods. The polycarbosilane compounds, polyorganosilane compounds, adhesion promoter materials and layered materials disclosed herein can be used in any suitable semiconductor or electronic application, including semiconductor devices, electronic devices, films and coatings.

Abstract: A composition comprising a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A method of producing a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A silicon containing pre-polymer is provided, which is capable of forming a film having a dielectric constant of about 2.8 or less. It is then combined with a porogen, and a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles, to thereby form a composition. A layer of the composition is coated on to a substrate, crosslinked to form a gelled film, and heated to remove substantially all of the porogen and to thereby produce a nanoporous silica dielectric film of the invention.

Abstract: The present invention provides adamantane or diamantane compositions that are useful as a dielectric material in microelectronic applications such as microchips.

Abstract: The present invention provides a composition comprising (a) thermosetting component comprising: (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where E, Q, G, h, I, j, and w are as set forth below and (b) porogen that bonds to thermosetting component (a). Preferably, the porogen is selected from the group consisting of unsubstituted polynorbornene, substituted polynorbornene, polycaprolactone, unsubstituted polystyrene, substituted polystyrene, polyacenaphthylene homopolymer, and polyacenaphthylene copolymer. Preferably, the present compositions may be used as dielectric substrate in microchips, multichip modules, laminated circuit boards, or printed wiring boards.

Abstract: Methods are presented herein for forming thermally stable, adhesive, low dielectric constant polyorganosilicon dielectric films for use as semiconductor insulators and as adhesion promoters as and in conjunction with low k materials. Surprisingly, the methods described herein can provide polyorganosilicon materials, coatings and films having very low dielectric constants that are generated from specified polycarbosilane starting materials employing wet coating and standard high energy generating processes, without the need for exotic production techniques or incurring disadvantages found in other low k dielectric film-forming methods. The polycarbosilane compounds, polyorganosilane compounds, adhesion promoter materials and layered materials disclosed herein can be used in any suitable semiconductor or electronic application, including semiconductor devices, electronic devices, films and coatings.

Abstract: The present composition provides a composition comprising: (a) thermosetting component wherein the thermosetting component comprises monomer having the structure dimer having the structure or a mixture of the monomer and the dimer wherein Y is selected from cage compound and silicon atom; R1, R2, R3, R4, R5, and R6 are independently selected from aryl, branched aryl, and arylene ether; at least one of the aryl, the branched aryl, and the arylene ether has an ethynyl group; R7 is aryl or substituted aryl; and at least one of the R1, R2, R3, R4, R5, and R6 comprises at least two isomers; and (b) adhesion promoter comprising compound having at least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with a substrate when the composition is applied to a substrate.

Abstract: The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer.

Abstract: Low dielectric constant layered materials and a methof for making said layered materials comprising the steps of: a) providing a surface; b) spinning a dielectric material on to the surface; c) curing the dielectric material to form a dielectric layer; d) spinning a low dielectric constant material on to the dielectric layer; and e) curing the low dielectric constant material to form a low dielectric constant layer. Each layer can be spun-on to the layered component and subsequently cured before additional layers are added or all layers can be spun-on to the layered component and then the entire stack is cured at once.