Abstract: A polishing apparatus that employs a polishing media retention arrangement to prevent slippage or wrinkles in the polishing media during polishing. The polishing media is drawn against a support surface by a vacuum applied between the polishing media and the support surface. Also, a porous layer may be placed between the polishing media and the support surface to form dimples in the polishing media upon the application of vacuum. An alternative arrangement draws the polishing media against a carrier and the substrate to be polished.

Abstract: A semiconductor wafer processing system, more specifically, a chemical mechanical planarization system including a polishing media reconditioning system. In one embodiment, the polishing media reconditioning system comprises at least a first and second conditioning roller that contact a working surface of a polishing media while rotating in opposite directions. Other embodiments include conditioning plates disposed on a carrier that includes the polishing head, a conditioning roller or disk that traverses the surface of the polishing media and a conditioning disk that conditions the polishing media while retained in the polishing head. Alternatively, the polishing media may be conditioned utilizing the devices embodied above remotely from the processing system.

Abstract: Apparatus and method of polishing substrates using a carrier that does not contact the backside of the substrate during polishing. The apparatus preferably forms an air bearing between the substrate and the carrier plate during polishing. Alternatively, liquids, or combinations of liquids and gases may be used to form the bearing layer. When a water layer is formed, at least a portion of the carrier plate is formed as a microporous force applicator. The apparatuses are also capable of adjusting the force profile that is applied to the substrate so as to differentially polish different areas of the substrate. A containment ring is provided for horizontal containment of the substrate during polishing and to define an area within which the substrate precesses during polishing. A containment ring or barrier is also provided for precessing with a substrate during polishing.