Abstract: A process for photoresist layer removal from a semiconductor wafer comprises exposing at relatively high temperature the wafer to an RIE-free microwave-energy-generated plasma of a primary gas mixture, the exposing causing photoresist removal such as by ashing. The method also comprises determining an endpoint to the removal by a determined change in the visible light emanating from a chamber containing the wafer. A multi-step process of the present invention comprises the above method and a preliminary RIE-free microwave-energy-generated plasma that solubilizes polymer on walls of vias of the wafer. This multi-step process also comprises, following the exposing step, a cooling step, a cooling step with a temperature check, and a deglazing step. The deglazing step also uses an RIE-free microwave-energy-generated plasma. Specific gas mixtures for the respective plasmas are exemplified. Other embodiments of methods of the present invention are comprised of less steps, or a consolidation of such steps.

Abstract: The present invention provides a method of manufacturing a semiconductor device. In one embodiment, the method includes forming a positive relief structure from a material located on a substrate, the step of forming the positive relief structure leaving an unwanted remnant of said material proximate a base of the positive relief structure. The method further includes cleaning the positive relief structure. In addition, the method includes removing the unwanted remnant with a gas containing fluorine and that is substantially free of hydrogen.

Abstract: The present invention provides a method of manufacturing a semiconductor device. In one embodiment, the method includes forming a positive relief structure from a material located on a substrate, the step of forming the positive relief structure leaving an unwanted remnant of said material proximate a base of the positive relief structure. The method further includes cleaning the positive relief structure. In addition, the method includes removing the unwanted remnant with a gas containing fluorine and that is substantially free of hydrogen.

Abstract: A process (100) for forming a metal interconnect (102) in a semiconductor device (82) using a photoresist layer (20) having a thickness (T) of no more than 0.66 microns without forming a notch in the side (30) of the interconnect. A reactive ion etching process (118) used to remove portions of a metal layer (16) to form the interconnect includes a burst etch step (108) wherein a first high flow rate (48) of passivation gas is delivered, followed by a main metal etch step (110) wherein the flow rate of passivation gas is reduced to a second lower value.