Abstract: A telecommunication network associated with a wireless telecommunication provider can be configured based, at least in part, on one or more predictions of cell congestion. Data that may be utilized in the prediction of congestion is received and/or collected from one or more components. According to some examples, machine learning is utilized to generate the predictions. The prediction of cell congestion may be a prediction of congestion for a particular cell, or a group of cells (e.g., cells that exhibit similar activity may be clustered). In some configurations, cells that have exhibited congestion may be grouped or clustered such that a user may be able to more easily view mitigation solutions attempted in the past to address the congestion. After generating the cell congestion predictions, one or more actions may be taken to mitigate the predicted congestion.

Abstract: A semiconductor structure is provided. In one embodiment, the structure comprises at least one active device located in a substrate and directly under a bond pad. A conductor is located between the bond pad and the substrate. The conductor has a plurality of gaps filled with insulating material. The insulating material is harder than the conductor.

Abstract: A method of forming a semiconductor structure is provided. One method comprises forming a device region between a substrate and a bond pad. Patterning a conductor between the bond pad and the device region with gaps. Filling the gaps with insulation material that is harder than the conductor to form pillars of relatively hard material that extend through the conductor and forming an insulation layer of the insulation material between the conductor and the bond pad.

Abstract: Apparatus for and methods of thermally processing undoped or lightly doped semiconductor wafers (30) that typically are not very absorptive of an annealing radiation beam (14) are disclosed. The apparatus (10) uses a relatively low power activating radiation beam (240) with a photon energy greater than the bandgap energy of the semiconductor substrate in order to generate free carriers (315) at and near the substrate surface (32). The free carriers so generated enhance the absorption by the substrate surface of the longer wavelength annealing radiation beam. The annealing radiation beam is thus able to rapidly heat the substrate surface and permit subsequent rapid cooling to obtain, for example, a high level of electrical activity (activation) of dopants (310) formed therein. The invention obviates the need to pre-heat the substrate in order to increase absorption of the annealing radiation beam when performing thermal processing.

Abstract: An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.

Abstract: An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.