Patents by Inventor Paul Bernatis
Paul Bernatis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8592037Abstract: Compositions containing a nanostructure, preferably a nanocrystal, are provided. The nanostructures have ligands bound to the surface. Such ligands are preferably siloxane containing ligands having at least one —COON group, although ligands having various ?P?O groups are also contemplated. The nanostructures can be embedded into a polymer such as a silicone polymer.Type: GrantFiled: October 20, 2011Date of Patent: November 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: J. Wallace Parce, Paul Bernatis, Robert Dubrow, William P Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery A Whiteford, Jonathan Ziebarth
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Patent number: 8425803Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.Type: GrantFiled: November 9, 2009Date of Patent: April 23, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: J. Wallace Parce, Paul Bernatis, Robert Dubrow, William P. Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery A. Whiteford, Jonathan Ziebarth
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Publication number: 20120068118Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.Type: ApplicationFiled: October 20, 2011Publication date: March 22, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: J. Wallace Parce, Paul Bernatis, Robert Dubrow, William P. Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery A. Whiteford, Jonathan Ziebarth
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Publication number: 20110251295Abstract: Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.Type: ApplicationFiled: May 27, 2011Publication date: October 13, 2011Applicant: NANOSYS, INC.Inventors: Srikanth Ranganathan, Paul Bernatis, Joel Gamoras, Chao Liu, J. Wallace Parce
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Patent number: 7976646Abstract: Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.Type: GrantFiled: August 18, 2006Date of Patent: July 12, 2011Assignee: Nanosys, Inc.Inventors: Srikanth Ranganathan, Paul Bernatis, Joel Gamoras, Chao Liu, J. Wallace Parce
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Publication number: 20110150695Abstract: Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.Type: ApplicationFiled: August 18, 2006Publication date: June 23, 2011Applicant: NANOSYS, Inc.Inventors: Srikanth Ranganathan, Paul Bernatis, Joel Gamoras, Chao Liu, J. Wallace Parce
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Patent number: 7741197Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.Type: GrantFiled: December 20, 2006Date of Patent: June 22, 2010Assignee: Nanosys, Inc.Inventors: Xiangfeng Duan, Paul Bernatis, Alice Fischer-Colbrie, James M. Hamilton, Francesco Lemmi, Yaoling Pan, J. Wallace Parce, Cheri X. Y. Pereira, David P. Stumbo
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Publication number: 20100140551Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.Type: ApplicationFiled: November 9, 2009Publication date: June 10, 2010Applicant: NANOSYS, Inc.Inventors: J. Wallace Parce, Paul Bernatis, Robert Dubrow, William P. Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery A. Whiteford, Jonathan Ziebarth
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Patent number: 7645397Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.Type: GrantFiled: July 24, 2006Date of Patent: January 12, 2010Assignee: Nanosys, Inc.Inventors: J. Wallace Parce, Paul Bernatis, Robert Dubrow, William P. Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery A. Whiteford, Jonathan Ziebarth
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Publication number: 20070034833Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.Type: ApplicationFiled: July 24, 2006Publication date: February 15, 2007Inventors: J. Parce, Paul Bernatis, Robert Dubrow, William Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery Whiteford, Jonathan Ziebarth