Abstract: A maze-based switch generally having three functional blocks is disclosed. The first functional block handles communications by accepting an entered maze pattern from an external system controller and outputting the entered maze pattern (and optionally its directional complement) to the second functional block. The second functional block stores the maze pattern (and optionally its directional complement) to a permanent storage element and outputs the stored, entered maze pattern and its directional complement to a series of transistors in the third functional block. The third functional block is an electronic maze in which a correct maze pattern and its directional complement must be received by the transistors for the transistors to pass electrical power through the electronic maze to a connected element. The third functional block may alternatively be implemented with optical elements, optoelectronic elements, microelectromechanical elements, or elements formed by other microsystem technologies.

Abstract: A system, method, and algorithm for detecting and identifying special nuclear material (SNM) (including fissionable material), explosives, or drugs is disclosed. This material detection system relies on active interrogation of material using a short, intense neutron pulse, and characterization of the resulting prompt gamma response in two short time windows, the first concurrent with and the second immediately following the end of the neutron pulse, optionally subject to a total transit delay time of the neutrons from the neutron source to the target and from the target to the gamma detector. A high data rate analysis system implements data stream analysis and statistical correlations of the two short time window gamma responses to rapidly detect or identify SNM, explosives, or drugs. The duration of the neutron pulse is so short that minimal dose results. Various shields help to minimize the background signal falling on the gamma detector to improve sensitivity.

Abstract: A microelectromechanical system (MEMS) device can be used for quantitative mechanical testing of materials within a controlled (chemical and temperature) environment, with the ability for electrochemical control to the specimen, that is coupled with a complimentary in-situ characterization technique.

Abstract: Apparatus for detecting radiation includes a sensor medium disposed within a cavity in a silicon-based substrate. An electrode arrangement is provided for collecting charge generated within the sensor medium by interactions with impinging radiation and drifted through the sensor medium. The electrode arrangement is constituted, in part, by a silicon portion of the substrate that is doped to increase its electrical conductivity and that defines part of the cavity wall.

Abstract: A microelectromechanical system (MEMS) device can be used for quantitative mechanical testing of materials within a controlled (chemical and temperature) environment, with the ability for electrochemical control to the specimen, that is coupled with a complimentary in-situ characterization technique.

Abstract: An apparatus for detecting radiation is provided. In embodiments, at least one sensor is disposed on a surface of a wafer-like substrate. At least one sensor medium is fixed relative to the substrate, optically or electrically coupled to the sensor, and separated from the sensor by no more than the substrate thickness. An electronic signal-processing circuit is connected to the sensor and configured to produce an output when the sensor is stimulated by a product of an interaction between the sensor medium and impinging radiation. The sensor is configured to collect, from the sensor medium, charge and/or light produced within the sensor medium by interactions with impinging radiation.

Abstract: A radiation generator useful for medical applications, among others, is provided. The radiation generator includes a catheter; a plasma discharge chamber situated within a terminal portion of the catheter, a cathode and an anode positioned within the plasma discharge chamber and separated by a gap, and a high-voltage transmission line extensive through the interior of the catheter and terminating on the cathode and anode so as to deliver, in operation, one or more voltage pulses across the gap.

Abstract: The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

Abstract: The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

Abstract: The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

Abstract: A directional neutron detector has an ion chamber formed in a dielectric material; a signal electrode and a ground electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; readout circuitry which is electrically coupled to the signal and ground electrodes; and a signal processor electrically coupled to the readout circuitry. The ion chamber has a pair of substantially planar electrode surfaces. The chamber pressure of the neutron absorbing material is selected such that the reaction particle ion trail length for neutrons absorbed by the neutron absorbing material is equal to or less than the distance between the electrode surfaces. The signal processor is adapted to determine a path angle for each absorbed neutron based on the rise time of the corresponding pulse in a time-varying detector signal.

Abstract: A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. The distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber.

Abstract: Various technologies described herein pertain to a micro gas-puff based source of neutrons, x-rays, and/or energetic particles. The micro gas-puff based source can generate plasma, which can emit neutrons, x-rays, and the like. The micro gas-puff based source includes a diode, which further includes an anode and a cathode. Further, a chamber is between the anode and the cathode. Moreover, a MEMS gas supply can inject a puff of gas between the anode and the cathode within the chamber, where the MEMS gas supply shapes the puff of gas to form a quasispherical density profile of gas created in various of geometries. Further, a pulsed power supply applies a voltage across the anode and the cathode to cause compression of the puff of gas to form the plasma.

Abstract: A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. Desirably, the distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber.

Abstract: Systems and methods for combining dielectrophoresis, magnetic forces, and hydrodynamic forces to manipulate particles in channels formed on top of an electrode substrate are discussed. A magnet placed in contact under the electrode substrate while particles are flowing within the channel above the electrode substrate allows these three forces to be balanced when the system is in operation. An optical detection scheme using near-confocal microscopy for simultaneously detecting two wavelengths of light emitted from the flowing particles is also discussed.

Abstract: A dielectrophoretic columnar focusing device uses interdigitated microelectrodes to provide a spatially non-uniform electric field in a fluid that generates a dipole within particles in the fluid. The electric field causes the particles to either be attracted to or repelled from regions where the electric field gradient is large, depending on whether the particles are more or less polarizable than the fluid. The particles can thereby be forced into well defined stable paths along the interdigitated microelectrodes. The device can be used for flow cytometry, particle control, and other process applications, including cell counting or other types of particle counting, and for separations in material control.

Abstract: Footwear comprises a sole and a plurality of sealed cavities contained within the sole. The sealed cavities can be incorporated as deformable containers within an elastic medium, comprising the sole. A plurality of micro electro-mechanical system (MEMS) pressure sensors are respectively contained within the sealed cavity plurality, and can be adapted to measure static and dynamic pressure within each of the sealed cavities. The pressure measurements can provide information relating to the contact pressure distribution between the sole of the footwear and the wearer's environment.

Abstract: A MEMS-based micro-unmanned vehicle includes at least a pair of wings having leading wing beams and trailing wing beams, at least two actuators, a leading actuator beam coupled to the leading wing beams, a trailing actuator beam coupled to the trailing wing beams, a vehicle body having a plurality of fulcrums pivotally securing the leading wing beams, the trailing wing beams, the leading actuator beam and the trailing actuator beam and having at least one anisotropically etched recess to accommodate a lever-fulcrum motion of the coupled beams, and a power source.

Abstract: The present invention comprises a novel, lightweight, massively parallel device comprising microelectromechanical (MEMS) fluidic actuators, to reconfigure the profile, of a surface. Each microfluidic actuator comprises an independent bladder that can act as both a sensor and an actuator. A MEMS sensor, and a MEMS valve within each microfluidic actuator, operate cooperatively to monitor the fluid within each bladder, and regulate the flow of the fluid entering and exiting each bladder. When adjacently spaced in a array, microfluidic actuators can create arbitrary surface profiles in response to a change in the operating environment of the surface. In an embodiment of the invention, the profile of an airfoil is controlled by independent extension and contraction of a plurality of actuators, that operate to displace a compliant cover.

Abstract: New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Compensation for etching-related structural artifacts can be accomplished by proper use of such an etching delay layer.