Abstract: Methods and apparatuses for an integration scheme for forming a fully aligned via using selective deposition of graphene on metal surfaces and selective deposition of an inhibitor layer on exposed barrier surfaces prior to depositing dielectric material are provided.

Abstract: The present disclosure relates to methods and apparatuses for selective deposition on a surface. In particular, a silicon-containing inhibitor can be used to selectively bind to a first region, thus inhibiting deposition of a material on that first region.

Abstract: Methods and apparatuses for selective deposition of metal oxides on metal surfaces relative to dielectric surfaces are provided. Selective deposition is achieved by exposing metal and dielectric surfaces to a blocking reagent capable of forming a hydrolyzable bond with metal while forming a non-hydrolyzable bond with the dielectric, and dipping the surfaces in water to cleave the hydrolyzable bond and leave a blocked surface on the dielectric surface, followed by depositing metal oxide selectively on the metal surface relative to the dielectric surface. Blocking reagents are deposited by wet or dry techniques and may include an alkylaminosilane or alkylchlorosilane as examples.

Abstract: Methods and apparatuses for selective deposition of metal oxides on metal surfaces relative to dielectric surfaces are provided. Selective deposition is achieved by exposing metal and dielectric surfaces to a blocking reagent capable of forming a hydrolyzable bond with metal while forming a non hydrolyzable bond with the dielectric, and dipping the surfaces in water to cleave the hydrolyzable bond and leave a blocked surface on the dielectric surface, followed by depositing metal oxide selectively on the metal surface relative to the dielectric surface. Blocking reagents are deposited by wet or dry techniques and may include an alkylaminosilane or alkylchlorosilane as examples.

Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.

Abstract: Methods and apparatuses for selective deposition of metal oxides on metal surfaces relative to dielectric surfaces are provided. Selective deposition is achieved by exposing metal and dielectric surfaces to a blocking reagent capable of forming a hydrolyzable bond with metal while forming a non hydrolyzable bond with the dielectric, and dipping the surfaces in water to cleave the hydrolyzable bond and leave a blocked surface on the dielectric surface, followed by depositing metal oxide selectively on the metal surface relative to the dielectric surface. Blocking reagents are deposited by wet or dry techniques and may include an alkylaminosilane or alkylchlorosilane as examples.

Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.

Abstract: A method is provided, including the following operations: simultaneously applying an organosilyl chloride inhibitor and a Lewis base to a surface of a substrate, the organosilyl chloride inhibitor being configured to adsorb onto dielectric regions of the surface of the substrate; performing a plurality of cycles of an ALD process to deposit a metal oxide onto the surface of the substrate; wherein the applying of the organosilyl chloride inhibitor and the Lewis base prevents the ALD process from depositing the metal oxide onto the dielectric regions of the surface of the substrate.

Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.

Abstract: A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.

Abstract: A method is provided, including the following operations: simultaneously applying an organosilyl chloride inhibitor and a Lewis base to a surface of a substrate, the organosilyl chloride inhibitor being configured to adsorb onto dielectric regions of the surface of the substrate; performing a plurality of cycles of an ALD process to deposit a metal oxide onto the surface of the substrate; wherein the applying of the organosilyl chloride inhibitor and the Lewis base prevents the ALD process from depositing the metal oxide onto the dielectric regions of the surface of the substrate.

Abstract: A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.

Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.