Abstract: Ferroelectric materials and more particularly cerium-doped ferroelectric materials and related devices and methods are disclosed. Aspects of the present disclosure relate to ferroelectric layers of hafnium-zirconium-oxide (HZO) doped with cerium that enable reliable ferroelectric fabrication processes and related structures with significantly improved cycling endurance performance. Such doping in ferroelectric layers also provides the capability to modulate polarization to achieve a desired operation voltage range. Doping concentrations of cerium in HZO films are disclosed with ranges that provide a stabilized polar orthorhombic phase in resulting films, thereby promoting ferroelectric capabilities. Exemplary fabrication techniques for doping cerium in HZO films as well as exemplary device structures including metal-ferroelectric-metal (MFM) and metal-ferroelectric-insulator-semiconductor (MFIS) structures are also disclosed.

Abstract: Techniques include a method of forming an interfacial passivation layer between a first semiconductor material (such as germanium) and a high-k gate dielectric. Such techniques include using a hydrogen-based plasma formed using a slotted-plane antenna plasma processing system. Such a plasma treatment can be executed with substrate temperatures less than 380 degrees Celsius, and even down to about 200 degrees Celsius or below.

Abstract: A device and a method of forming a continuous polycrystalline Ge film having crystalline Ge islands is provided that includes depositing an amorphous Ge (a-Ge) layer on a substrate, oxidizing the top surface of the a-Ge layer to form a GeOx layer, depositing a seed layer of Al on the GeOx layer and catalyzing the Al seed layer, where Ge mass transport is generated from the underlying a-Ge layer to the Al seed layer through the GeOx layer by thermal annealing, where a continuous polycrystalline Ge film having crystalline Ge islands is formed on the Al seed layer.

Abstract: Techniques include a method of forming an interfacial passivation layer between a first semiconductor material (such as germanium) and a high-k gate dielectric. Such techniques include using a hydrogen-based plasma formed using a slotted-plane antenna plasma processing system. Such a plasma treatment can be executed with substrate temperatures less than 380 degrees Celsius, and even down to about 200 degrees Celsius or below.

Abstract: A device and a method of forming a continuous polycrystalline Ge film having crystalline Ge islands is provided that includes depositing an amorphous Ge (a-Ge) layer on a substrate, oxidizing the top surface of the a-Ge layer to form a GeOx layer, depositing a seed layer of Al on the GeOx layer and catalyzing the Al seed layer, where Ge mass transport is generated from the underlying a-Ge layer to the Al seed layer through the GeOx layer by thermal annealing, where a continuous polycrystalline Ge film having crystalline Ge islands is formed on the Al seed layer.

Abstract: A photoelectrochemical regenerative photovoltaic cell is provided that includes an electrode structure having a semiconductor photoelectrode layer, and a pinhole-free metal oxide layer disposed on the semiconductor photoelectrode layer forming the electrode structure, where the pinhole-free metal oxide layer is less than 10 nm in thickness, where the thickness of the pinhole-free metal oxide layer protects the semiconductor photoelectrode layer from i) oxidation, ii) dissolution, or i) and ii) when in contact with an electrolyte solution, where the pinhole-free metal oxide layer has a band gap that is transparent to solar radiation and provides band offsets that permit facile electron or hole transport between the electrolyte solution and the semiconducting photoelectrode.

Abstract: Embodiments of the present disclosure include an anode, devices and systems including the anode (e.g., electrochemical devices and photo-electrochemical devices), methods of using the anode, methods of producing H2 and O2 from H2O, Cl2, oxidixed organic feedstocks, oxidation for the detection and quantification of chemical species, and the like.

Abstract: Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, a memory cell having two sections with outwardly-facing portions, the outwardly-facing portions electrically coupled to electrodes is implemented. The memory cell has an ionic barrier between the two sections. The two sections and the ionic barrier facilitate movement of ions from one of the two sections to the other of the two sections in response to a first voltage differential across the outwardly-facing portions. The two sections and the ionic barrier diminish movement of ions from the one of the two sections to the other of the two sections in response to another voltage differential across the outwardly-facing portions.

Abstract: Embodiments of the present disclosure include an anode, devices and systems including the anode (e.g., electrochemical devices and photo-electrochemical devices), methods of using the anode, methods of producing H2 and O2 from H2O, Cl2, oxidixed organic feedstocks, oxidation for the detection and quantification of chemical species, and the like.

Abstract: Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, resistance-change memory devices are implemented having a pair of electrodes and an intervening electrochemical material. A heating element facilitates changes in resistance of the electrochemical material-region due to changes in ion distribution. The method is implemented without a process for forming a filament-like region in the electrochemical material.

Abstract: A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where the plasma conditions are selected effective to form plasma excited N2 species while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H2O to alter the thickness and chemical composition of the layer.

Abstract: A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where the plasma conditions are selected effective to form plasma excited N2 species while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H2O to alter the thickness and chemical composition of the layer.

Abstract: Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, resistance-change memory devices are implemented having a pair of electrodes and an intervening electrochemical material. A heating element facilitates changes in resistance of the electrochemical material-region due to changes in ion distribution. The method is implemented without a process for forming a filament-like region in the electrochemical material.

Abstract: Carbon nanotube circuits are implemented with high-&kgr; dielectrics. According to one example embodiment of the present invention, a carbon nanotube circuit includes at least one carbon nanotube with a high-&kgr; dielectric material. In one implementation, a gate electrode is capacitively coupled to the carbon nanotube via the high-&kgr; dielectric material. Voltage applied to the gate electrode is thus capacitively coupled to the carbon nanotube to control, for example, electrical characteristics of the carbon nanotube. With this approach, the carbon nanotube circuit exhibits voltage-controllable characteristics that can be used for a variety of implementations.