Patents by Inventor Paul C. Waldrop

Paul C. Waldrop has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6969470
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Grant
    Filed: October 23, 2003
    Date of Patent: November 29, 2005
    Assignee: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Patent number: 6913701
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Grant
    Filed: October 16, 2003
    Date of Patent: July 5, 2005
    Assignee: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Patent number: 6824697
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: November 30, 2004
    Assignee: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Patent number: 6780336
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: August 24, 2004
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Publication number: 20040082088
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Application
    Filed: October 23, 2003
    Publication date: April 29, 2004
    Applicant: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Publication number: 20040079723
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Application
    Filed: October 16, 2003
    Publication date: April 29, 2004
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Patent number: 6706200
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: March 16, 2004
    Assignee: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Patent number: 6702950
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: March 9, 2004
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Patent number: 6673253
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: January 6, 2004
    Assignee: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Patent number: 6464892
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: October 15, 2002
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Patent number: 6444138
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Grant
    Filed: June 16, 1999
    Date of Patent: September 3, 2002
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Publication number: 20020113034
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Application
    Filed: November 2, 2001
    Publication date: August 22, 2002
    Applicant: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Publication number: 20020092822
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Application
    Filed: November 2, 2001
    Publication date: July 18, 2002
    Applicant: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Publication number: 20020084249
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Application
    Filed: November 2, 2001
    Publication date: July 4, 2002
    Applicant: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Publication number: 20020084242
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Application
    Filed: November 2, 2001
    Publication date: July 4, 2002
    Applicant: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Publication number: 20020079287
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Application
    Filed: November 2, 2001
    Publication date: June 27, 2002
    Applicant: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson
  • Publication number: 20020063107
    Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.
    Type: Application
    Filed: November 2, 2001
    Publication date: May 30, 2002
    Applicant: Kionix, Inc.
    Inventors: James E. Moon, Timothy J. Davis, Gregory J. Galvin, Kevin A. Shaw, Paul C. Waldrop, Sharlene A. Wilson