Patents by Inventor Paul Castrovillo
Paul Castrovillo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7402512Abstract: A high aspect ratio contact structure formed over a junction region in a silicon substrate comprises a titanium interspersed with titanium silicide layer that is deposited in the contact opening and directly contacts an upper surface of the substrate. Silicon-doping of CVD titanium, from the addition of SiH4 during deposition, reduces consumption of substrate silicon during the subsequent silicidation reaction in which the titanium reacts with silicon to form a titanium silicide layer that provides low resistance electrical contacts between the junction region and the silicon substrate. The contact structure further comprises a titanium nitride contact fill that is deposited in the contact opening and fills substantially the entire contact opening.Type: GrantFiled: June 15, 2005Date of Patent: July 22, 2008Assignee: Micron Technology, Inc.Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Publication number: 20060202283Abstract: A high aspect ratio contact structure using a metal silicide adhesion layer that is interposed between titanium and titanium nitride (TiN) to promote adhesion of TiN to Ti. The metal silicide adhesion layer created from silicon doped CVD Ti can be deposited over the unreacted Ti after the silicidation reaction or deposited directly on the silicon substrate in place of CVD Ti. The contact structure further includes contact fill that is comprised of TiCl4 based TiN, which affords improved step coverage in the contact structure.Type: ApplicationFiled: May 3, 2006Publication date: September 14, 2006Inventors: Ammar Deraa, Sujit Sharan, Paul Castrovillo
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Publication number: 20060175664Abstract: The invention includes methods of forming metal silicide. A layer consisting essentially of one or more metal nitrides is formed directly against a silicon-containing region. A layer comprising one or more metals is formed over the one or more metal nitrides. Silicon is transferred from the silicon-containing region, through the one or more metal nitrides, and to the one or more metals to convert at least some of the one or more metals into metal silicides. In particular aspects, titanium is formed over tantalum nitride, and the silicon is transferred into the titanium to convert the titanium into titanium silicide. The invention also includes semiconductor constructions having a layer consisting essentially of titanium silicide directly against a layer consisting essentially of tantalum nitride.Type: ApplicationFiled: February 7, 2005Publication date: August 10, 2006Inventors: Nirmal Ramaswamy, Paul Castrovillo, Joel Drewes
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Publication number: 20050233577Abstract: A high aspect ratio contact structure formed over a junction region in a silicon substrate comprises a titanium interspersed with titanium silicide layer that is deposited in the contact opening and directly contacts an upper surface of the substrate. Silicon-doping of CVD titanium, from the addition of SiH4 during deposition, reduces consumption of substrate silicon during the subsequent silicidation reaction in which the titanium reacts with silicon to form a titanium silicide layer that provides low resistance electrical contacts between the junction region and the silicon substrate. The contact structure further comprises a titanium nitride contact fill that is deposited in the contact opening and fills substantially the entire contact opening.Type: ApplicationFiled: June 15, 2005Publication date: October 20, 2005Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Patent number: 6908849Abstract: A high aspect ratio contact structure formed over a junction region in a silicon substrate comprises a titanium interspersed with titanium silicide layer that is deposited in the contact opening and directly contacts an upper surface of the substrate. Silicon-doping of CVD titanium, from the addition of SiH4 during deposition, reduces consumption of substrate silicon during the subsequent silicidation reaction in which the titanium reacts with silicon to form a titanium silicide layer that provides low resistance electrical contacts between the junction region and the silicon substrate. The contact structure further comprises a titanium nitride contact fill that is deposited in the contact opening and fills substantially the entire contact opening.Type: GrantFiled: September 1, 2004Date of Patent: June 21, 2005Assignee: Micron Technology, Inc.Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Patent number: 6858904Abstract: A high aspect ratio contact structure formed over a junction region in a silicon substrate comprises a titanium interspersed with titanium silicide layer that is deposited in the contact opening and directly contacts an upper surface of the substrate. Silicon-doping of CVD titanium, from the addition of SiH4 during deposition, reduces consumption of substrate silicon during the subsequent silicidation reaction in which the titanium reacts with silicon to form a titanium silicide layer that provides low resistance electrical contacts between the junction region and the silicon substrate. The contact structure further comprises a titanium nitride contact fill that is deposited in the contact opening and fills substantially the entire contact opening.Type: GrantFiled: August 30, 2001Date of Patent: February 22, 2005Assignee: Micron Technology, Inc.Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Publication number: 20050032361Abstract: A high aspect ratio contact structure formed over a junction region in a silicon substrate comprises a titanium interspersed with titanium silicide layer that is deposited in the contact opening and directly contacts an upper surface of the substrate. Silicon-doping of CVD titanium, from the addition of SiH4 during deposition, reduces consumption of substrate silicon during the subsequent silicidation reaction in which the titanium reacts with silicon to form a titanium silicide layer that provides low resistance electrical contacts between the junction region and the silicon substrate. The contact structure further comprises a titanium nitride contact fill that is deposited in the contact opening and fills substantially the entire contact opening.Type: ApplicationFiled: September 1, 2004Publication date: February 10, 2005Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Patent number: 6822299Abstract: Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The contacts are useful for providing electrical connection to active components beneath an insulation layer in integrated circuits such as memory devices. The conductive contacts comprise boron-doped TiCl4-based titanium nitride, and possess a sufficient level adhesion to the insulative layer to eliminate peeling from the sidewalls of the contact opening and cracking of the insulative layer when formed to a thickness of greater than about 200 angstroms.Type: GrantFiled: November 4, 2002Date of Patent: November 23, 2004Assignee: Micron Technology Inc.Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Patent number: 6791149Abstract: Diffusion barrier film layers and methods of manufacture and use are provided. The films comprise boron-doped TiCl4-based titanium nitride, and provide an improved diffusion barrier having good adhesive, electrical conductivity, and anti-diffusion properties. The films can be formed on a silicon substrate without an underlying contact layer such as TiSix, an improvement in the fabrication of contacts to shallow junctions and other miniature components of integrated circuits.Type: GrantFiled: November 4, 2002Date of Patent: September 14, 2004Assignee: Micron Technology, Inc.Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Patent number: 6746952Abstract: Diffusion barrier film layers and methods of manufacture and use are provided. The films comprise boron-doped TiCl4-based titanium nitride, and provide an improved diffusion barrier having good adhesive, electrical conductivity, and anti-diffusion properties. The films can be formed on a silicon substrate without an underlying contact layer such as TiSix, an improvement in the fabrication of contacts to shallow junctions and other miniature components of integrated circuits.Type: GrantFiled: August 29, 2001Date of Patent: June 8, 2004Assignee: Micron Technology, Inc.Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Patent number: 6696368Abstract: Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The contacts are useful for providing electrical connection to active components beneath an insulation layer in integrated circuits such as memory devices. The conductive contacts comprise boron-doped TiCl4-based titanium nitride, and possess a sufficient level adhesion to the insulative layer to eliminate peeling from the sidewalls of the contact opening and cracking of the insulative layer when formed to a thickness of greater than about 200 angstroms.Type: GrantFiled: July 31, 2001Date of Patent: February 24, 2004Assignee: Micron Technology, Inc.Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Publication number: 20030075802Abstract: Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The contacts are useful for providing electrical connection to active components beneath an insulation layer in integrated circuits such as memory devices. The conductive contacts comprise boron-doped TiCl4-based titanium nitride, and possess a sufficient level adhesion to the insulative layer to eliminate peeling from the sidewalls of the contact opening and cracking of the insulative layer when formed to a thickness of greater than about 200 angstroms.Type: ApplicationFiled: November 4, 2002Publication date: April 24, 2003Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Publication number: 20030077895Abstract: Diffusion barrier film layers and methods of manufacture and use are provided. The films comprise boron-doped TiCl4-based titanium nitride, and provide an improved diffusion barrier having good adhesive, electrical conductivity, and anti-diffusion properties. The films can be formed on a silicon substrate without an underlying contact layer such as TiSix, an improvement in the fabrication of contacts to shallow junctions and other miniature components of integrated circuits.Type: ApplicationFiled: November 4, 2002Publication date: April 24, 2003Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Publication number: 20030042550Abstract: A high aspect ratio contact structure formed over a junction region in a silicon substrate comprises a titanium interspersed with titanium silicide layer that is deposited in the contact opening and directly contacts an upper surface of the substrate. Silicon-doping of CVD titanium, from the addition of SiH4 during deposition, reduces consumption of substrate silicon during the subsequent silicidation reaction in which the titanium reacts with silicon to form a titanium silicide layer that provides low resistance electrical contacts between the junction region and the silicon substrate. The contact structure further comprises a titanium nitride contact fill that is deposited in the contact opening and fills substantially the entire contact opening.Type: ApplicationFiled: August 30, 2001Publication date: March 6, 2003Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Publication number: 20030042614Abstract: A high aspect ratio contact structure using a metal silicide adhesion layer that is interposed between titanium and titanium nitride (TiN) to promote adhesion of TiN to Ti. The metal silicide adhesion layer created from silicon doped CVD Ti can be deposited over the unreacted Ti after the silicidation reaction or deposited directly on the silicon substrate in place of CVD Ti. The contact structure further includes contact fill that is comprised of TiCl4 based TiN, which affords improved step coverage in the contact structure.Type: ApplicationFiled: August 30, 2001Publication date: March 6, 2003Inventors: Ammar Deraa, Sujit Sharan, Paul Castrovillo
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Publication number: 20030042607Abstract: Diffusion barrier film layers and methods of manufacture and use are provided. The films comprise boron-doped TiCl4-based titanium nitride, and provide an improved diffusion barrier having good adhesive, electrical conductivity, and anti-diffusion properties. The films can be formed on a silicon substrate without an underlying contact layer such as TiSix, an improvement in the fabrication of contacts to shallow junctions and other miniature components of integrated circuits.Type: ApplicationFiled: August 29, 2001Publication date: March 6, 2003Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo
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Publication number: 20030025206Abstract: Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The contacts are useful for providing electrical connection to active components beneath an insulation layer in integrated circuits such as memory devices. The conductive contacts comprise boron-doped TiCl4-based titanium nitride, and possess a sufficient level adhesion to the insulative layer to eliminate peeling from the sidewalls of the contact opening and cracking of the insulative layer when formed to a thickness of greater than about 200 angstroms.Type: ApplicationFiled: July 31, 2001Publication date: February 6, 2003Inventors: Ammar Derraa, Sujit Sharan, Paul Castrovillo