Abstract: Disclosed herein are integrated circuit structures, packages, and devices that include resistors and/or capacitors which may be provided on the same substrate/die/chip as III-N devices, e.g., III-N transistors. An integrated circuit structure, comprising a base structure comprising a III-N material, the base structure having a conductive region of a doped III-N material. The IC structure further comprises a first contact element, including a first conductive element, a dielectric element, and a second conductive element, wherein the dielectric element is between the first conductive element and the second conductive element, and wherein the first conductive element is between the conductive region and the dielectric element. The IC structure further comprises a second contact element electrically coupled to the first contact element via the conductive region.

Abstract: Disclosed herein are IC structures, packages, and devices that include planar III-N transistors with wrap-around gates and/or one or more wrap-around source/drain (S/D) contacts. An example IC structure includes a support structure (e.g., a substrate) and a planar III-N transistor. The transistor includes a channel stack of a III-N semiconductor material and a polarization material, provided over the support structure, a pair of S/D regions provided in the channel stack, and a gate stack of a gate dielectric material and a gate electrode material provided over a portion of the channel stack between the S/D regions, where the gate stack at least partially wraps around an upper portion of the channel stack.

Abstract: Disclosed herein are IC structures, packages, and devices that include III-N transistors integrated on the same support structure as non-III-N transistors (e.g., Si-based transistors), using semiconductor regrowth. In one aspect, a non-III-N transistor may be integrated with an III-N transistor by depositing a III-N material, forming an opening in the III-N material, and epitaxially growing within the opening a semiconductor material other than the III-N material. Since the III-N material may serve as a foundation for forming III-N transistors, while the non-III-N material may serve as a foundation for forming non-III-N transistors, such an approach advantageously enables implementation of both types of transistors on a single support structure. Proposed integration may reduce costs and improve performance by enabling integrated digital logic solutions for III-N transistors and by reducing losses incurred when power is routed off chip in a multi-chip package.

Abstract: This invention relates to thienopyrimidinones and their use as inhibitors of TRPA1 activity, pharmaceutical compositions containing the same, and methods of using the same as agents for treatment and/or prevention of fibrotic diseases, inflammatory and auto-immune diseases and CNS-related diseases.

Abstract: A near-field test system for a phased array antenna includes a probe, a beam forming network, and a computing system. The probe is disposed at a fixed position in a near-field of the phased array antenna and transmits a test beam toward a fixed location on the phased array. The beam forming network is coupled to the phased array and includes a plurality of phase shifters and a beam summer. The phase shifters steer received beams for each antenna element of the phased array to form a planar wave front. The beam summer is coupled to the phase shifters and combines power of the received beams. The computing system is coupled to the beam forming network and scales combined power of the received beams and generates a virtual spectrum for the phased array antenna from scaled power of the received beams.

Abstract: Systems and methods include determination, for each of a plurality of discrete features, of statistics based on a number of occurrences of each discrete value of the discrete feature in the data, determination of first summary statistics based on the determined statistics, determine of a dissimilarity for each discrete feature based on the first summary statistics and on the statistics determined for the discrete feature, determination of candidate discrete features based on the determined dissimilarities, determination, for each of the candidate discrete features, of second summary statistics based on values of a continuous feature associated with each discrete value of the candidate discrete feature, determination of a deviation score for each of the candidate discrete features based on the second summary statistics, and transmission of the candidate discrete features for display in association with the continuous feature based on the determined deviation scores.

Abstract: The present invention relates to monoclonal anti-Sortilin antibodies which have been found useful correcting a deficient level progranulin (PGRN). In particular, these antibodies can be used in the treatment of frontotemporal dementia (FTD) and amyotrophic lateral sclerosis (ALS).

Abstract: Systems and methods include determination, determine, for each of a plurality of discrete features, of statistics for each discrete value of the discrete feature based on values of a continuous feature associated with the discrete value, determination, for each discrete feature, of first summary statistics based on the statistics determined for each discrete value of the discrete feature, determination, for each discrete feature, of a dissimilarity based on the first summary statistics determined for the discrete feature and on the statistics determined for each discrete value of the discrete feature, determination of candidate discrete features of the discrete features based on the determined dissimilarities, the candidate discrete features comprising less than all of the discrete features, determination, for each of the candidate discrete features, of second summary statistics based on values of the continuous feature associated with each discrete value of the candidate discrete feature, determine of a devi

Abstract: Disclosed herein are IC structures, packages, and devices that include III-N transistor-based cascode arrangements that may simultaneously realize enhancement mode transistor operation and high voltage capability. In one aspect, an IC structure includes a source region, a drain region, an enhancement mode III-N transistor, and a depletion mode III-N transistor, where each of the transistors includes a first and a second source or drain (S/D) terminals. The transistors are arranged in a cascode arrangement in that the first S/D terminal of the enhancement mode III-N transistor is coupled to the source region, the second S/D terminal of the enhancement mode III-N transistor is coupled to the first S/D terminal of the depletion mode III-N transistor, and the second S/D terminal of the depletion mode III-N transistor is coupled to the drain region.

Abstract: Systems and methods include reception of a set of data, the set of data comprising a plurality of features, building, for each of a plurality of subsets of the plurality of features, a dimension reduction model based on the subset of features and associated values of the set of data, and, for each dimension reduction model, determination of a weight associated with each of subset of features based on the dimension model, identification of a predetermined number of features associated with the highest weights, and generation, for each dimension reduction model, of a data structure comprising the predetermined number of features and the weight associated with each of the predetermined number of features. A plurality of top features are determined based on the plurality of data structures, and a supervised learning model is trained based on the plurality of top features of the set of data.

Abstract: Systems and methods include reception of a set of data including continuous features and a discrete feature, each continuous feature associated with a plurality of values and the discrete feature associated with a plurality of discrete values, determine, for each continuous feature, a relationship factor representing a relationship between the discrete feature and the continuous feature based on the plurality of values associated with the continuous feature and the plurality of discrete values, identify one of the continuous features associated with a largest one of the determined relationship factors, generate, for each of the other features, a correlation factor representing a correlation between the continuous feature and the identified continuous feature, determine, for each of the continuous features other than the identified continuous feature, a composite relationship score based on the relationship factor and the correlation factor associated with the feature, and present a visualization associated wi

Abstract: Provided herein, inter alia, are methods of detecting the presence of extrachromosomal DNA (ecDNA) in esophageal cells obtained from a subject who has esophageal cancer or who is at risk of developing esophageal cancer. Provided are methods for treating esophageal cancer, including detecting the presence of ecDNA and administering an esophageal cancer treatment.

Abstract: Systems and methods include reception of data including a plurality of continuous features and a first discrete feature, each of the plurality of continuous features associated with a plurality of values and the first discrete feature associated with a plurality of discrete values, determination of an overall output value of a function based on the plurality of values associated with each of the plurality of continuous features, determination, for each discrete value of the plurality of discrete values, of an output value of the function based on ones of the plurality of values associated with the discrete value, scaling of the output value determined for each discrete value based on the determined output values and the overall output value, and presentation of the scaled output values.

Abstract: The present disclosure provides certain uracil derivatives that are inhibitors of transient receptor potential ankyrin 1 (TRPA1), and are therefore useful for the treatment of diseases treatable by inhibition of TRPA1. Also provided are pharmaceutical compositions containing the same, and processes for preparing said compounds.

Abstract: The present disclosure provides certain 3H,4H,5H,6H,7H-pyrimido[4,5-b][1,4]oxazine-4,6-dione derivatives that are inhibitors of transient receptor potential ankyrin 1 (TRPA1), and are therefore useful for the treatment of diseases treatable by inhibition of TRPA1. Also provided are pharmaceutical compositions containing the same, and processes for preparing said compounds.

Abstract: The present disclosure provides certain 3H,4H-thieno[2,3-d]pyrimidin-4-one derivatives that are inhibitors of transient receptor potential ankyrin 1 (TRPA1), and are therefore useful for the treatment of diseases treatable by inhibition of TRPA1. Also provided are pharmaceutical compositions containing the same, and processes for preparing said compounds.

Abstract: The present disclosure provides certain imidazo[4,5-d]pyridazinonyl derivatives that are inhibitors of transient receptor potential ankyrin 1 (TRPA1), and are therefore useful for the treatment of diseases treatable by inhibition of TRPA1. Also provided are pharmaceutical compositions containing the same, and processes for preparing said compounds.

Abstract: The present disclosure involves systems, software, and computer implemented methods for ranking time dimensions. One example method includes receiving a request for an insight analysis for a dataset that includes a value dimension and a set of multiple date dimensions. Each date dimension is converted into a time series and a value quality factor is determined for each time series that represents a level of data quality for the time series. A time series informative factor is determined for each time series that represents how informative the time series is within a specified time window. An insight score is determined, for each time dimension, based on the determined value quality factors and the determined time series informative factors. The insight score for the time dimension is provided, for at least some of the time dimensions.

Abstract: Systems, apparatuses, and methods provides for technology that controls a confocal antenna system. The technology controls an Integrated Phased Array (IPA) feed system to emit electromagnetic energy towards a sub-reflector, where the sub-reflector reflects the electromagnetic energy to a main reflector, and further where the main reflector receives and reflects the electromagnetic energy to form a radiation pattern on an area. The radiation pattern has a first size and a first gain. The technology conducts an identification that the radiation pattern is to be adjusted so as to adjust the first size to a second size and adjust the first gain to a second gain. In response to the identification, the technology moves the main reflector linearly along a first axis, and electronically steers a beam of the electromagnetic energy emitted from the IPA feed system towards the sub-reflector.