Abstract: An integrated circuit structure comprises a fin extending from a substrate, the fin comprising source and drain regions, and a channel region between the source and drain regions. A multilayer high-k gate stack comprising a plurality of materials extends conformally over the fin over the channel region. A gate electrode is over and on a topmost material in the multilayer high-k gate stack. Fluorine is implanted in the substrate beneath the multilayer high-k gate stack or in the plurality of materials comprising the multilayer high-k gate stack.

Abstract: Integrated circuit structures having deep via bar width tuning are described. For example, an integrated circuit structure includes a plurality of gate lines extending over first and second semiconductor nanowire stack channel structures or fin structures. A plurality of trench contacts is intervening with the plurality of gate lines. A conductive structure is between the first and second semiconductor nanowire stack channel structures or fin structures, the conductive structure having a first width in a first region and a second width in a second region between the first and second semiconductor nanowire stack channel structures or fin structures, the second width different than the first width.

Abstract: Multiple voltage threshold integrated circuit structures with local layout effect tuning, and methods of fabricating multiple voltage threshold integrated circuit structures with local layout effect tuning, are described. For example, an integrated circuit structure includes a first fin structure or vertical arrangement of horizontal nanowires. A second fin structure or vertical arrangement of horizontal nanowires is laterally spaced apart from the first fin structure or vertical arrangement of horizontal nanowires. An N-type gate structure is over the first fin structure or vertical arrangement of horizontal nanowires. A P-type gate structure is over the second fin structure or vertical arrangement of horizontal nanowires, the P-type gate structure in contact with the N-type gate structure with a PN boundary between the P-type gate structure and the N-type gate structure.

Abstract: Integrated circuit structures having reduced local layout effects, and methods of fabricating integrated circuit structures having reduced local layout effects, are described. For example, an integrated circuit structure includes an NMOS region including a first plurality of fin structures or vertical stacks of horizontal nanowires, and first alternating gate lines and trench contact structures over the first plurality of fin structures or vertical stacks of horizontal nanowires. The integrated circuit structure also includes a PMOS region including a second plurality of fin structures or vertical stacks of horizontal nanowires, and second alternating gate and trench contact structures over the second plurality of fin structures or vertical stacks of horizontal nanowires. A gate line is shared between the NMOS region and the PMOS region, and a trench contact structure is shared between the NMOS region and the PMOS region.

Abstract: The present invention relates to a magnesium alloy material, which is an in situ magnesium hydroxide nanosheet layer modified magnesium alloy. The material is prepared from a magnesium alloy through a hydrothermal reaction under alkaline condition. The protective effect of the in situ formed magnesium hydroxide nanosheet layer structure results in remarkably enhanced corrosion resistance of the magnesium alloy, meanwhile the biocompatibility can also be significantly improved since the release rate of magnesium ion can be significantly reduced. In addition, the two-dimensional nanolayer structure has a non-releasing physical antibacterial property depending on contact. Therefore, the magnesium alloy material according to the present invention has an extremely great application prospect in the field of medical implant.

Abstract: Disclosed herein is a device for facilitating managing administering of psychedelic drugs to users, in accordance with some embodiments. Accordingly, the apparatus comprises a dispenser unit, a communication device, a processing device, and a storage device. Further, the dispenser unit dispenses a dosage of a type of psychedelic drug. Further, the communication device receives user data. Further, the processing device analyzes the user data, determines mental disorder of the users, analyzes clinical data and research data using machine learning models, generates treatment plans for treating the mental disorder of the one or more users, determines the dosage of the type of psychedelic drug, and generates commands for the dispenser unit. Further, the dispensing of the dosage of the type of psychedelic drug is based on the commands. Further, the storage device retrieves the clinical data, retrieves the research data, and stores the machine learning models and the user data.

Abstract: The present invention relates to a magnesium alloy material, which is an in situ magnesium hydroxide nanosheet layer modified magnesium alloy. The material is prepared from a magnesium alloy through a hydrothermal reaction under alkaline condition. The protective effect of the in situ formed magnesium hydroxide nanosheet layer structure results in remarkably enhanced corrosion resistance of the magnesium alloy, meanwhile the biocompatibility can also be significantly improved since the release rate of magnesium ion can be significantly reduced. In addition, the two-dimensional nanolayer structure has a non-releasing physical antibacterial property depending on contact. Therefore, the magnesium alloy material according to the present invention has an extremely great application prospect in the field of medical implant.

Abstract: Disclosed are a material with supercapacitance modified surface and a preparation method and application thereof. Specifically, the present disclosure introduces a material having a controllably supercapacitive surface. The surface is chargeable, the full-charged modified surface can interact with bacteria disturbing the electron transfer of respiratory chain of bacteria and inhibiting the growth and reproduction of bacteria in a short-term. The antibacterial rate can be improved by cyclically charging-discharging without losing capacitance, and prevent formation of biofilm of bacteria. The antibacterial system can quantitatively control the antibacterial process without affecting the biocompatibility of the material, and has the advantages of environmental protection and controllability.

Abstract: Disclosed herein are systems, methods, and apparatus for tailoring dosages of compounds to a user's individual needs using a software application comprising artificial intelligence and hardware for formulating and dispensing the tailored dosages determined from user information and available databases.

Abstract: Novel hybrid materials and fabrication methods thereof are provided. The novel hybrid materials can include a biodegradable polymer and a biodegradable metallic material. The hybrid material can also include a coupling agent between the biodegradable metallic material and the biodegradable polymer. A method of fabricating a hybrid material can include performing a surface treatment process on the biodegradable metallic material, and then either performing a solvent formation method or a thermal formation method.

Abstract: Novel hybrid materials and fabrication methods thereof are provided. The novel hybrid materials can include a biodegradable polymer and a biodegradable metallic material. The hybrid material can also include a coupling agent between the biodegradable metallic material and the biodegradable polymer. A method of fabricating a hybrid material can include performing a surface treatment process on the biodegradable metallic material, and then either performing a solvent formation method or a thermal formation method.

Abstract: Some embodiments of the present disclosure relate to a method to increase breakdown voltage of a power device. A power device is formed on a silicon-on-insulator (SOI) wafer made up of a device wafer, a handle wafer, and an intermediate oxide layer. A recess is formed in a lower surface of the handle wafer to define a recessed region of the handle wafer. The recessed region of the handle wafer has a first handle wafer thickness, which is greater than zero. An un-recessed region of the handle wafer has a second handle wafer thickness, which is greater than the first handle wafer thickness. The first handle wafer thickness of the recessed region provides a breakdown voltage improvement for the power device.

Abstract: A substrate for an integrated circuit includes a device wafer having a raw carrier concentration and an epitaxial layer disposed over the device wafer. The epitaxial layer has a first carrier concentration. The first carrier concentration is higher than the raw carrier concentration.

Abstract: Some embodiments of the present disclosure relate to a method to increase breakdown voltage of a power device. A power device is formed on a silicon-on-insulator (SOI) wafer made up of a device wafer, a handle wafer, and an intermediate oxide layer. A recess is formed in a lower surface of the handle wafer to define a recessed region of the handle wafer. The recessed region of the handle wafer has a first handle wafer thickness, which is greater than zero. An un-recessed region of the handle wafer has a second handle wafer thickness, which is greater than the first handle wafer thickness. The first handle wafer thickness of the recessed region provides a breakdown voltage improvement for the power device.

Abstract: A substrate for an integrated circuit includes a device wafer having a raw carrier concentration and an epitaxial layer disposed over the device wafer. The epitaxial layer has a first carrier concentration. The first carrier concentration is higher than the raw carrier concentration.

Abstract: A network device has a H.323 interface to communicate under a H.323 standard of the International Telecommunications Union. The device also has a Session Initiation Protocol (SIP) interface. A processor converts signaling messages between H.323 and Session Initiation Protocol to establish a fax session for communication of packetized fax signals and data.

Abstract: Techniques for determining media statistics for a communication from a first device to a second device are provided. The techniques include receiving media traffic for the communication at a network device configured to receive the media traffic from the first device. The network device is also configured to transmit the media traffic to the second device. A copy of the received media traffic is also forked to a processor. The received media traffic is sent to the second device while the forked copy of the media traffic is analyzed at the processor to generate media statistics about the media traffic.

Abstract: Techniques for determining media statistics for a communication from a first device to a second device are provided. The techniques include receiving media traffic for the communication at a network device configured to receive the media traffic from the first device. The network device is also configured to transmit the media traffic to the second device. A copy of the received media traffic is also forked to a processor. The received media traffic is sent to the second device while the forked copy of the media traffic is analyzed at the processor to generate media statistics about the media traffic.

Abstract: A candle light-diversifying device is mounted at a bottom side of a candle which includes a tunnel running through an imaginary central axis thereof, and a candlewick received in the tunnel. The candle light-diversifying device includes a housing having three through holes and an insertion hole; a light-emitting module mounted inside the housing and having a power source, a control circuit, three illuminants, and a photosensitive element, the three illuminants running through the through the three through holes to be exposed outside the housing for emitting red light, blue light, and green light respectively, the photosensitive element having a concavity formed at a top end thereof; and the optical fiber having a spherical portion formed at a bottom end thereof and fixedly mounted in the concavity to be received in the tunnel of the candle. Thus, the candle light-diversifying device enables the candle to emit colorful light.

Abstract: The invention provides a method for making surface treated shape memory materials such as from NiTi alloy using plasma immersion ion implantation and deposition and related ion-beam and plasma-based techniques to alter the surface properties of those materials primarily for biomedical applications. The surfaces are treated with nitrogen, oxygen, and carbon, but become bio-inactive after implanted with other elements such as silicon.