Patents by Inventor Paul Cornelis Barton

Paul Cornelis Barton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10580922
    Abstract: Method of providing a boron doped region (8, 8a, 8b) in a silicon substrate (1), includes the steps of: (a) depositing a boron doping source (6) over a first surface (2) of the substrate (1); (b) annealing the substrate (1) for diffusing boron from the boron doping source (6) into the first surface (2), thereby yielding a boron doped region; (c) removing the boron doping source (6) from at least part of the first surface (2); (d) depositing undoped silicon oxide (10) over the first surface (2); and (e) annealing the substrate (1) for lowering a peak concentration of boron in the boron doped region (8, 8a) through boron absorption by the undoped silicon oxide. The silicon oxide (10) acts as a boron absorber to obtain the desired concentration of the boron doped region (8).
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: March 3, 2020
    Assignee: NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO
    Inventors: Yuji Komatsu, John Anker, Paul Cornelis Barton, Ingrid Gerdina Romijn
  • Publication number: 20150357499
    Abstract: Method of providing a boron doped region (8, 8a, 8b) in a silicon substrate (1), includes the steps of: (a) depositing a boron doping source (6) over a first surface (2) of the substrate (1); (b) annealing the substrate (1) for diffusing boron from the boron doping source (6) into the first surface (2), thereby yielding a boron doped region; (c) removing the boron doping source (6) from at least part of the first surface (2); (d) depositing undoped silicon oxide (10) over the first surface (2); and (e) annealing the substrate (1) for lowering a peak concentration of boron in the boron doped region (8, 8a) through boron absorption by the undoped silicon oxide. The silicon oxide (10) acts as a boron absorber to obtain the desired concentration of the boron doped region (8).
    Type: Application
    Filed: January 9, 2014
    Publication date: December 10, 2015
    Inventors: Yuji KOMATSU, John ANKER, Paul Cornelis BARTON, Ingrid Gerdina ROMIJN
  • Patent number: 9034670
    Abstract: A method (100; 100a; 100b; 100c) for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: May 19, 2015
    Assignee: Stichting Energieonderzoek Centrum Nederland
    Inventors: Paul Cornelis Barton, Ronald Cornelis Gerard Naber, Arno Ferdinand Stassen
  • Patent number: 8623688
    Abstract: A method for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: January 7, 2014
    Assignee: Stichting Energieonderzoek Centrum Nederland
    Inventors: Lambert Johan Geerligs, Gaofei Li, Paul Cornelis Barton, Ronald Cornelis Gerard Naber, Arno Ferdinand Stassen, Zhiyan Hu
  • Publication number: 20120204948
    Abstract: A method (100; 100a; 100b; 100c) for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.
    Type: Application
    Filed: August 24, 2010
    Publication date: August 16, 2012
    Inventors: Paul Cornelis Barton, Ronald Cornelis Gerard Naber, Arno Ferdinand Stassen
  • Publication number: 20120181667
    Abstract: A method for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.
    Type: Application
    Filed: August 24, 2010
    Publication date: July 19, 2012
    Applicant: STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND
    Inventors: Lambert Johan Geerligs, Gaofei Li, Paul Cornelis Barton, Ronald Cornelis Gerard Naber, Arno Ferdinand Stassen, Zhiyan Hu