Abstract: A method for characterizing an electric signal (10), includes the propagation of a first light beam (18) through an electro-optical medium (17) in a first propagation direction, wherein at least one optical property of the medium changes when it is submitted to an electrical field, and the propagation of a second light beam (19) through the electro-optical medium in a second propagation direction different from the first direction. For each light beam, a measurement of a variation in an optical property of the light beam (18; 19) due to the propagation of the beam in the medium (17) is used for determining the propagation direction (20) of an electric signal (10) submitting the medium to an electrical field. A device for implementing the method, and an electro-optical probe implemented in the device are also disclosed. Applicability: electro-optical sampling of a component, characterization of electric pulses in guided structures.

Abstract: A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.

Abstract: A method for characterising an electric signal (10), includes the propagation of a first light beam (18) through an electro-optical medium (17) in a first propagation direction, wherein at least one optical property of the medium changes when it is submitted to an electrical field, and the propagation of a second light beam (19) through the electro-optical medium in a second propagation direction different from the first direction. For each light beam, a measurement of a variation in an optical property of the light beam (18; 19) due to the propagation of the beam in the medium (17) is used for determining the propagation direction (20) of an electric signal (10) submitting the medium to an electrical field. A device for implementing the method, and an electro-optical probe implemented in the device are also disclosed. Applicability: electro-optical sampling of a component, characterisation of electric pulses in guided structures.

Abstract: A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.