Patents by Inventor Paul-Cyril Moutou

Paul-Cyril Moutou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4097142
    Abstract: This invention relates to apparatus for automatically tracing patterns under the control of a program recorded in a computer. Said apparatus comprises means for initially recording the pattern in a liquid crystal cell by a known method under the control of said computer, and means for projecting the pattern thus recorded onto a photosensitive surface which records it on a reduced scale. It may also be projected on a large scale onto a monitor screen.
    Type: Grant
    Filed: December 14, 1976
    Date of Patent: June 27, 1978
    Assignee: Thomson-CSF
    Inventors: Paul Cyril Moutou, Michel Hareng, Serge Le Berre
  • Patent number: 4045252
    Abstract: The method relates to the production of a very thin insulating or weakly-doped layer in the immediate neighborhood of a highly-doped layer within the body of a semiconductor structure designed to operate in the microwave range. For instance a P.sup.+ I N.sup.+ structure is obtained in an N.sup.+ -doped gallium arsenide substrate, by implanting a P.sup.+ - layer using beryllium ions. An insulating layer is spontaneously formed between the highly-doped layers. Using beryllium, the thickness is effectively of the order of one-tenth of a micron. In another example, an avalanche diode of high efficiency, made of gallium arsenide for microwave operation, having a P.sup.+ N.sup.- N.sup.+ N N.sup.+ structure is obtained wherein the layer N.sup.- is the thin weakly-doped layer in the immediate neighborhood of a highly-doped layer (N.sup.+), which is substantially as thin as the N.sup.- layer in this particular case.
    Type: Grant
    Filed: October 15, 1975
    Date of Patent: August 30, 1977
    Assignee: Thomson-CSF
    Inventor: Paul Cyril Moutou
  • Patent number: 4006490
    Abstract: A Gunn diode comprises deposited in succession on the active zone of gallium arsenide of type N: a first layer of the same material having the same type of conductivity but very strongly doped, and a second layer of amorphous germanium in which is developed a tunnel effect. A metallic deposit covering this second layer serves as cathode contact.
    Type: Grant
    Filed: November 28, 1975
    Date of Patent: February 1, 1977
    Assignee: Thomson-CSF
    Inventors: Paul-Cyril Moutou, Jean-Jacques Godart