Abstract: A multiplexer is configured to receive a transmit signal from a first amplifier and to provide a receive signal to a second amplifier. A leakage signal is transmitted to a path leading to the second amplifier. A first device configured to provide a portion of the transmit signal to an active cancellation circuit, the active cancellation circuit configured to substantially invert the phase of the portion of transmit signal and to attenuate the amplitude of the portion of the transmit signal. A second device configured to receive the portion of the transmit signal from the active cancellation circuit, and to combine the portion of the transmit signal from the active cancellation circuit with the leakage signal prior to an input to the second amplifier.

Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

Abstract: In a filter having a half-ladder structure comprising an alternating series of series branches and shunt branches, including a signal input and a signal output related to a common ground, at least one series branch or one parallel branch of the filter is configured as a BAW device comprising a first BAW resonator and a second BAW resonator connected either antiparallel or antiseries. The second harmonic emission generated by the first BAW resonator substantially cancels the second harmonic emission of the second BAW resonator and the second harmonic emission of at least one other series branch or one other parallel branch of the filter. By this method, the filter's second harmonic emissions are reduced.

Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

Abstract: An apparatus includes a substrate with a cavity and a two-stage resonator filter fabricated over the cavity. The two-stage resonator filter includes a first stage and a second stage. The first stage includes a first resonator and a second resonator, the second resonator acoustically coupled to the first resonator. The second stage includes a third resonator and a fourth resonator, the fourth resonator acoustically coupled to the third resonator. The second resonator and the third resonators are electrically coupled. A decoupling layer couples the first resonator and the second resonator. The decoupling layer extends between the third resonator and the fourth resonator. The first resonator and the fourth resonator are above the substrate. The decoupling layer is above the first resonator and the fourth resonator. The second resonator and the third resonators are above the decoupling layer.

Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

Abstract: In a filter having a half-ladder structure comprising an alternating series of series branches and shunt branches, including a signal input and a signal output related to a common ground. at least one series branch or one parallel branch of the filter is configured as a BAW device comprising a first BAW resonator and a second BAW resonator connected either antiparallel or antiseries. The second harmonic emission generated by the first BAW resonator substantially cancels the second harmonic emission of the second BAW resonator and the second harmonic emission of at least one other series branch or one other parallel branch of the filter. By this method, the filter's second harmonic emissions are reduced.

Abstract: An apparatus includes a substrate with a cavity and a two-stage resonator filter fabricated over the cavity. The two-stage resonator filter includes a first stage and a second stage. The first stage includes a first resonator and a second resonator, the second resonator acoustically coupled to the first resonator. The second stage includes a third resonator and a fourth resonator, the fourth resonator acoustically coupled to the third resonator. The second resonator and the third resonators are electrically coupled. A decoupling layer couples the first resonator and the second resonator. The decoupling layer extends between the third resonator and the fourth resonator. The first resonator and the fourth resonator are above the substrate. The decoupling layer is above the first resonator and the fourth resonator. The second resonator and the third resonators are above the decoupling layer.

Abstract: A film acoustically-coupled transformer (FACT) has a first and a second stacked bulk acoustic resonator (SBAR 1, SBAR 2). Each SBAR has a stacked pair of film bulk acoustic resonators (FBARs) and an acoustic decoupler between the FBARs. Each FBAR has opposed planar electrodes and a layer of piezoelectric material between the electrodes. A first electrical circuit connecting one of the FBARs of SBAR1 to one of the FBARs of SBAR 2 and a second electrical circuit connecting the other of the FBARs of SBAR 1 to the other of the FBARs of SBAR 2. The first electrical circuit connects the respective FBARs in parallel and second electrical circuit connects the respective FBARs in series. A shunt inductor is included from the reception path to ground.

Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

Abstract: A method for fabricating an apparatus is disclosed. A substrate is provided and a seed layer is fabricated on the substrate. A thin-film resonator is fabricated on the substrate, the resonator including a portion of a bottom electrode layer and a portion of a top electrode layer. Then, at least one aligned opening is etched through the bottom electrode layer and the seed layer. Finally, at least one bonding pad is fabricated, the bonding pad extending through the aligned opening such that bonding pad contacts the substrate forming a Schottky diode.

Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

Abstract: An acoustic resonator includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a recessed region. The substrate has a first surface. The first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material. The second electrode has a second electrode perimeter that is shaped as a polygon. The recessed region is adjacent the second electrode. The recessed region has a shape defining a recessed region perimeter. The recessed region perimeter is recessed relative to the second electrode perimeter.

Abstract: The present invention is a modular frequency division filter having an antenna port that connects to two or three transmission paths. Each transmission path includes either a band pass filter or a duplexer to separate the received signal by frequency. Frequency phase shifters or shunt inductors may be included to further enhance the frequency separation. Following frequency separation, the separated signal is transceived by a device operating at the respective separated frequency.

Abstract: Acoustically coupled resonators include a first and a second acoustic resonator. Both the first and second acoustic resonators include a first electrode, a layer of piezoelectric material, and a second electrode. The first electrode is adjacent a first surface of the layer of piezoelectric material. The second electrode is adjacent a second surface of the layer of piezoelectric material. At least the second electrode has an edge that is tapered.

Abstract: A filter having a thin-film resonator fabricated on a semiconductor substrate and a method of making the same are disclosed. The filter has a bonding pad connected to the resonator and in contact with the substrate to form a Schottky diode with the substrate to protect the resonator from electrostatic discharges.

Abstract: High port-to-port RF isolation for a test socket in a production RF test environment is achieved by establishing a coaxial-type connection between the test socket and the device under test (DUT). This coaxial-type connection results by at least partially surrounding each port of the DUT with a ground seal connected to RF ground connection. In one embodiment, the ground seal is a metallic base plate of the test socket which surrounds the RF connection to the DUT.

Abstract: An apparatus such as a thin film resonator has a bottom electrode, a top electrode, and a composite layer between the two electrodes. The composite layer includes a piezoelectric (PZ) layer having a first coupling coefficient and a coupling coefficient control (CCC) layer having a second coupling coefficient. By varying the relative thicknesses of the PZ layer and the CCC layer during the manufacturing process, the coupling coefficient of the resonator can be established (to any value between the first coupling coefficient and the second coupling coefficient) with minimal impact on resonant frequency. Further, it is relatively less difficult to fabricate the PZ layer and the CCC layer having the desired coupling coefficient (as a combination of the first coupling coefficient and the second coupling coefficient) compared to the difficulties of fabrication of a uniform PZ layer having the desired coupling coefficient.

Abstract: A filter having a thin-film resonator fabricated on a semiconductor substrate and a method of making the same are disclosed. The filter has a bonding pad connected to the resonator and in contact with the substrate to form a Schottky diode with the substrate to protect the resonator from electrostatic discharges.