Abstract: A physical vapor deposition sputtering process for enhancing the <0002> preferred orientation of a titanium layer uses hydrogen before or during the deposition process. Using the oriented titanium layer as a base layer for a titanium, titanium nitride, aluminum interconnect stack results in formation of an aluminum layer with predominant <111> crystallographic orientation which provides enhanced resistance to electromigration. In one process, a mixture of an inert gas, usually argon, and hydrogen is used as the sputtering gas for PVD deposition of titanium in place of pure argon. Alternatively, titanium is deposited in a two-step process in which an initial burst of hydrogen is introduced into the reaction chamber in a separate, first step. Pure argon is used as the sputtering gas for the titanium deposition in a second step. The method is broadly applicable to the deposition of metallization layers.

Abstract: A method and apparatus are provided for adaptively and predictively determining probabilities of occurrence for each symbol of a finite alphabet within a symbol string. A plurality of intervals are defined over a portion of the symbol string. As successive new symbols are added to the string, they enter the intervals, and old symbols pass out of the intervals. A probability for each symbol of the alphabet is maintained and updated by the following process. For each new symbol which enters the intervals, it is determined whether the new symbol is a given character of the alphabet, and whether each old symbol leaving each interval is the given character. Accordingly, the number of occurrences of the given character within each interval may change. A probability update value is determined, having a component from each interval determined by whether the number of occurrences of the given character in that interval changed.