Abstract: In one embodiment, a first transistor is configured to switch ON to discharge accumulated charges on an interconnect line during a metallization process. This advantageously protects a second transistor, which is coupled to the interconnect line, from charge buildup. The gate of the first transistor may be coupled to the interconnect line by way of a coupling capacitor. The gate of the first transistor may remain floating during the metallization process, and subsequently coupled to ground at a topmost metal level. The metallization process may be physical vapor deposition, for example.

Abstract: Customization methodology for integrated circuit (e.g., clocks) design customization using a software tool that integrates multiple integrated circuit development operations.

Abstract: In one embodiment, a first transistor is configured to switch ON to discharge accumulated charges on an interconnect line during a metallization process. This advantageously protects a second transistor, which is coupled to the interconnect line, from charge buildup. The gate of the first transistor may be coupled to the interconnect line by way of a coupling capacitor. The gate of the first transistor may remain floating during the metallization process, and subsequently coupled to ground at a topmost metal level. The metallization process may be physical vapor deposition, for example.

Abstract: An improved MOS memory circuit using an MOS clamp circuit on the bitlines which turns on when the voltage on a bitline exceeds a predetermined voltage, thereby drawing current from the bitline to remove excess charge and return the bitline to the predetermined voltage. The clamp circuit of this invention allows prompt read access because reading is not substantially delayed by the excess bitline charge.

Abstract: A method and apparatus for resetting a SRAM in a single DRAM-SRAM transfer cycle in a graphics system is described comprising a SRAM address decoder, a DRAM data input buffer, a reset data register and data lines. In operation, reset data is transferred into the DRAM data input buffer. Thereafter, the SRAM is isolated from the address decoder and the data lines and the reset data is transferred from the DRAM data input buffer into the reset data register. Then data is transferred in parallel between the DRAM and the SRAM. Upon completion of the transfer of data between the DRAM and the SRAM, the SRAM is recoupled to the data lines. After the SRAM is recoupled to the data lines, the reset data is transferred in parallel to the SRAM. Upon the transfer of the reset data to the SRAM, the system is returned to its pre-transfer cycle condition.

Abstract: A data load serializer for use in conjunction with a multi-stage, multiple parallel data channel serializer is described. Each data channel of the data serializer preferably includes a data sensing stage and a data latching stage. The serializer is preferably responsive to the provision of an address for selecting data from the main buffer memory for provision to the serial buffer memory and further preferably includes sequencer control logic for receiving the main buffer memory address and for directing the transfer of data between the main and serial buffer memories and an address counter for receiving a start location address referencing a beginning serial data buffer memory location of the storage of data sourced to or from the data serializer.

Abstract: Multiple bit parallel data serializers are described for accessing data serially through a port at high video data rates. The serializer preferably comprises a buffer array for storing data at a plurality of SRAM memory locations, sense amplifiers for sensing the stored data, an address decoder for selecting a predetermined memory location of the buffer array for data access by the sense amplifiers, a data latch for the latched buffering of data prior to output to the serial port and a control gate for enabling the gated transfer of data between the sense amplifiers and the output latch.

Abstract: A high access speed memory for the internal storage of data and the addressable input/output transfer of data thereto, the memory comprising means for the dynamic storage of data, means for the static storage of data, and means for transferring data between the dynamic storage means and the static storage means. The intimate interfacing of the static and dynamic memories provides a high access speed pathway to the dynamically stored data while impacting minimally on sense amplification timing and the use of a redundant dynamic memory scheme.

Abstract: A high speed, low power, multi-bit, single edge triggered, wraparound binary counter is provided which is resettable and loadable from a user-supplied address. The binary counter requires a relatively small amount of power due to the use of CMOS technology for construction of its circuitry, may be initiated at any of 2.sup.N (where N=bit count) start locations, and can be easily adapted to accommodate any desired number of counter cells. Further, it is capable of operating over wide ranges of temperatures and power supply conditions. The high speed binary counter is formed of a plurality of counter cells in which each counter cell includes a pass gate device responsive to a counter-update signal for allowing true and complement addresses to control a switching device when the counter-update signal is in the low state and for isolating the true and complement addresses from the switching device when the counter-update signal is in the high state.

Abstract: An improved substrate bias generator is disclosed for use in a capacitive charge storage integrated circuit memory device having an external voltage supply. The generator comprises means for generating first and second timing signals, charge pumping means disposed for pumping positive charge from the substrate of the integrated circuit memory device in response to the first and second timing signals. Removal of the positive charge from the substrate polarizes the substrate at a negative potential, which is the generated bias voltage. A voltage regulation means is disposed between the output of the charge pumping means (i.e., the substrate) and the means for generating the timing signals. The voltage regulation means provides a reference potential that regulates the amount of charge pumped from the substrate as a function of the magnitude of the generated bias voltage.

Abstract: In source-clocked type of cross-coupled latch sense amplifier of a dynamic random access memory device, there is provided a sense clock that employs multiple extended dummy memory cells to provide reference timing which tracks time constants of word line, cell transfer gate, cell capacitor, and bit line, and the sense clock is further compensated over large variations of fabrication process parameters and operating conditions. The trigger and slave clock circuit are chained in series to control the timing sequence of a plurality of clocked output signals. The clocked output signals are selectively amplified and summed in parallel to generate current with an intended dynamic characteristic. The current so generated is applied to the common source electrodes of the cross-coupled latch.