Patents by Inventor Paul D. Kirsch

Paul D. Kirsch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitors, systems, and methods
    Patent number: 8432020
    Abstract: Capacitors, systems, and methods are disclosed. In one embodiment, the capacitor includes a first electrode. The capacitor may also include a first insulator layer having a positive VCC adjacent to the first electrode. The capacitor may further include a second insulator layer having a negative VCC adjacent to the first insulator layer. The capacitor may also include a third insulator layer having a positive VCC adjacent to the second insulator layer. The capacitor may also include a second electrode adjacent to the third insulator layer.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: April 30, 2013
    Assignee: Sematech, Inc.
    Inventors: Chanro Park, Sangduk Park, Paul D. Kirsch, David Gilmer, Chang Yong Kang, Joel Barnett
  • Capacitors, Systems, and Methods
    Publication number: 20110298090
    Abstract: Capacitors, systems, and methods are disclosed. In one embodiment, the capacitor includes a first electrode. The capacitor may also include a first insulator layer having a positive VCC adjacent to the first electrode. The capacitor may further include a second insulator layer having a negative VCC adjacent to the first insulator layer. The capacitor may also include a third insulator layer having a positive VCC adjacent to the second insulator layer. The capacitor may also include a second electrode adjacent to the third insulator layer.
    Type: Application
    Filed: June 4, 2010
    Publication date: December 8, 2011
    Inventors: Chanro Park, Sangduk Park, Paul D. Kirsch, David Gilmer, Chang Yong Kang, Joel Barnett
  • Method of monitoring introduction of interfacial species
    Patent number: 7335969
    Abstract: A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.
    Type: Grant
    Filed: March 9, 2005
    Date of Patent: February 26, 2008
    Assignee: International Business Machines Corporation
    Inventors: Lance Genicola, Mark J. Hurley, Jeremy J. Kempisty, Paul D. Kirsch, Ravikumar Ramachandran, Suri Hedge
  • Method of monitoring introduction on interfacial species
    Patent number: 6929964
    Abstract: A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: August 16, 2005
    Assignee: International Business Machines Corporation
    Inventors: Lance Genicola, Mark J. Hurley, Jeremy J. Kempisty, Paul D. Kirsch, Ravikumar Ramachandran, Suri Hedge
  • Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric
    Patent number: 6930060
    Abstract: Methods for preparing a silicon oxynitride layer where the silicon oxynitride layer is deposited atop a substrate and have a low concentration of nitrogen at the interface of the silicon oxynitride layer and the substrate. The silicon oxynitride layer is formed by pulsing at least one interface precursor onto a substrate, where said substrate chemisorbs a portion of said at least one interface precursor to form a monolayer of said at least one interface precursor; and pulsing a nitrogen-containing precursor onto said substrate containing said monolayer of interface precursor, where said monolayer of said at least one interface precursor chemisorbs a portion of said nitrogen-containing precursor to form a monolayer of said nitrogen-containing precursor. The interface precursor includes oxygen-containing or silicon-containing precursor gasses.
    Type: Grant
    Filed: June 18, 2003
    Date of Patent: August 16, 2005
    Assignee: International Business Machines Corporation
    Inventors: Anthony I. Chou, Michael P. Chudzik, Toshiharu Furukawa, Oleg Gluschenkov, Paul D. Kirsch, Kristen C. Scheer, Joseph Shepard, Jr.
  • METHOD FOR FORMING A UNIFORM DISTRIBUTION OF NITROGEN IN SILICON OXYNITRIDE GATE DIELECTRIC
    Publication number: 20040256664
    Abstract: Methods for preparing a silicon oxynitride layer where the silicon oxynitride layer is deposited atop a substrate and have a low concentration of nitrogen at the interface of the silicon oxynitride layer and the substrate. The silicon oxynitride layer is formed by pulsing at least one interface precursor onto a substrate, where said substrate chemisorbs a portion of said at least one interface precursor to form a monolayer of said at least one interface precursor; and pulsing a nitrogen-containing precursor onto said substrate containing said monolayer of interface precursor, where said monolayer of said at least one interface precursor chemisorbs a portion of said nitrogen-containing precursor to form a monolayer of said nitrogen-containing precursor. The interface precursor includes oxygen-containing or silicon-containing precursor gasses.
    Type: Application
    Filed: June 18, 2003
    Publication date: December 23, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Anthony I. Chou, Michael P. Chudzik, Toshiharu Furukawa, Oleg Gluschenkov, Paul D. Kirsch, Kristen C. Scheer, Joseph Shepard