Abstract: Methods, apparatuses, and systems are presented for generating natural language models using a novel system architecture for feature extraction. A method for extracting features for natural language processing comprises: accessing one or more tokens generated from a document to be processed; receiving one or more feature types defined by user; receiving selection of one or more feature types from a plurality of system-defined and user-defined feature types, wherein each feature type comprises one or more rules for generating features; receiving one or more parameters for the selected feature types, wherein the one or more rules for generating features are defined at least in part by the parameters; generating features associated with the document to be processed based on the selected feature types and the received parameters; and outputting the generated features in a format common among all feature types.

Abstract: Some embodiments include a semiconductor device having a stack structure including a plurality of alternating tiers of dielectric material and poly-silicon formed on a substrate. Such a semiconductor device may further include at least one opening having a high aspect ratio and extending into the stack structure to a level adjacent the substrate, a first poly-silicon channel formed in a lower portion of the opening adjacent the substrate, a second poly-silicon channel formed in an upper portion of the opening, and WSiX material disposed between the first poly-silicon channel and the second poly-silicon channel in the opening. The WSiX material is adjacent to the substrate, and can be used as an etch-landing layer and a conductive contact to contact both the first poly-silicon channel and the second poly-silicon channel in the opening. Other embodiments include methods of making semiconductor devices.

Abstract: Some embodiments include a semiconductor device having a stack structure including a plurality of alternating tiers of dielectric material and poly-silicon formed on a substrate. Such a semiconductor device may further include at least one opening having a high aspect ratio and extending into the stack structure to a level adjacent the substrate, a first poly-silicon channel formed in a lower portion of the opening adjacent the substrate, a second poly-silicon channel formed in an upper portion of the opening, and WSiX material disposed between the first poly-silicon channel and the second poly-silicon channel in the opening. The WSiX material is adjacent to the substrate, and can be used as an etch-landing layer and a conductive contact to contact both the first poly-silicon channel and the second poly-silicon channel in the opening. Other embodiments include methods of making semiconductor devices.

Abstract: Some embodiments include a semiconductor device having a stack structure including a plurality of alternating tiers of dielectric material and poly-silicon formed on a substrate. Such a semiconductor device may further include at least one opening having a high aspect ratio and extending into the stack structure to a level adjacent the substrate, a first poly-silicon channel formed in a lower portion of the opening adjacent the substrate, a second poly-silicon channel formed in an upper portion of the opening, and WSiX material disposed between the first poly-silicon channel and the second poly-silicon channel in the opening. The WSiX material is adjacent to the substrate, and can be used as an etch-landing layer and a conductive contact to contact both the first poly-silicon channel and the second poly-silicon channel in the opening. Other embodiments include methods of making semiconductor devices.

Abstract: Some embodiments include a semiconductor device having a stack structure including a plurality of alternating tiers of dielectric material and poly-silicon formed on a substrate. Such a semiconductor device may further include at least one opening having a high aspect ratio and extending into the stack structure to a level adjacent the substrate, a first poly-silicon channel formed in a lower portion of the opening adjacent the substrate, a second poly-silicon channel formed in an upper portion of the opening, and WSiX material disposed between the first poly-silicon channel and the second poly-silicon channel in the opening. The WSiX material is adjacent to the substrate, and can be used as an etch-landing layer and a conductive contact to contact both the first poly-silicon channel and the second poly-silicon channel in the opening. Other embodiments include methods of making semiconductor devices.

Abstract: A plasma etch process to anisotropically etch a sandwich structure of silicon dioxide, polycrystalline silicon, and silicon dioxide "in situ", that is, in a single etch chamber. The silicon dioxide is etched using a SF.sub.6 /CHF.sub.3 /He chemistry. The polycrystalline silicon is etched using a HBr/He chemistry. A non-erodible cathode is used. Tungsten silicide may replace the polycrystalline silicon. Silicon nitride may replace the silicon dioxide.

Abstract: Railroad tank cars are provided with spirally wound cylindrical tanks spanning and supported on wheeled trucks with a continuous weld extending the full length of the tank. A steel plate ribbon or strip is spirally wound in the form of a right circular cylinder with a continuous weld bonding the edges of the strip in abutted relation to provide the tank side wall. The open ends of the resulting cylinder tube are closed by welded-on end caps and suitable openings are provided in the tube for manways, vents, valves and the like. A heating coil may be provided on the inside or outside of the tank in intimate contact with the spirally wound ribbon and conventional insulation and jacketing may be provided around the tank. Drop center and center sump tank are provided by cutting the spirally wound tube along a diagonal plane, rotating adjoining sections 180.degree.