Patents by Inventor Paul D. Shirley
Paul D. Shirley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230005785Abstract: Systems, method and related apparatuses for adjusting support elements of a support apparatus to approximate a surface profile of a wafer. The support apparatus may include a group of mutually lateral adjacent support elements, each mutually lateral adjacent support element is configured to independently move at least vertically and comprising an upper surface. The support apparatus may further include a thermal energy transfer device operably coupled to each of the mutually lateral support elements, and an actuator system operably coupled to each of the support elements to selectively move one or more of the mutually lateral support elements vertically.Type: ApplicationFiled: September 12, 2022Publication date: January 5, 2023Inventor: Paul D. Shirley
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Patent number: 11450552Abstract: Systems, method and related apparatuses for adjusting support elements of a support apparatus to approximate a surface profile of a wafer. The support apparatus may include a group of mutually lateral adjacent support elements, each mutually lateral adjacent support element is configured to independently move at least vertically and comprising an upper surface. The support apparatus may further include a thermal energy transfer device operably coupled to each of the mutually lateral support elements, and an actuator system operably coupled to each of the support elements to selectively move one or more of the mutually lateral support elements vertically.Type: GrantFiled: August 1, 2019Date of Patent: September 20, 2022Assignee: Micron Technology, Inc.Inventor: Paul D. Shirley
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Publication number: 20210035850Abstract: Systems, method and related apparatuses for adjusting support elements of a support apparatus to approximate a surface profile of a wafer. The support apparatus may include a group of mutually lateral adjacent support elements, each mutually lateral adjacent support element is configured to independently move at least vertically and comprising an upper surface. The support apparatus may further include a thermal energy transfer device operably coupled to each of the mutually lateral support elements, and an actuator system operably coupled to each of the support elements to selectively move one or more of the mutually lateral support elements vertically.Type: ApplicationFiled: August 1, 2019Publication date: February 4, 2021Inventor: Paul D. Shirley
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Patent number: 8859195Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: GrantFiled: October 24, 2012Date of Patent: October 14, 2014Assignee: Micron Technology, Inc.Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Publication number: 20130059255Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: ApplicationFiled: October 24, 2012Publication date: March 7, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Patent number: 8309297Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: GrantFiled: October 5, 2007Date of Patent: November 13, 2012Assignee: Micron Technology, Inc.Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Patent number: 8163468Abstract: Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.Type: GrantFiled: March 10, 2008Date of Patent: April 24, 2012Assignee: Micron Technology, Inc.Inventors: Yoshiki Hishiro, Lijing Gou, Scott E. Sills, Hiroyuki Mori, Paul D. Shirley, Troy V. Gugel, Adam L. Olson
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Patent number: 8124326Abstract: A method of patterning positive photoresist includes providing positive photoresist over a substrate. An area of the positive photoresist is exposed to a pattern of activating radiation at a dose which is below the Dose To CD of the pattern with the positive photoresist. The area of the positive photoresist is flood exposed to activating radiation at a dose from 1% to 75% of E0. A sum of the flood dose and the pattern dose is less than the Dose To CD yet effective to resolve the pattern in the positive photoresist upon develop. After exposing the area to the flood dose and the pattern dose, the area of the positive photoresist is developed to resolve the pattern in the positive photoresist. Other embodiments are contemplated.Type: GrantFiled: March 3, 2009Date of Patent: February 28, 2012Assignee: Micron Technology, Inc.Inventors: Paul D. Shirley, Hiroyuki Mori
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Publication number: 20100227282Abstract: A method of patterning positive photoresist includes providing positive photoresist over a substrate. An area of the positive photoresist is exposed to a pattern of activating radiation at a dose which is below the Dose To CD of the pattern with the positive photoresist. The area of the positive photoresist is flood exposed to activating radiation at a dose from 1% to 75% of E0. A sum of the flood dose and the pattern dose is less than the Dose To CD yet effective to resolve the pattern in the positive photoresist upon develop. After exposing the area to the flood dose and the pattern dose, the area of the positive photoresist is developed to resolve the pattern in the positive photoresist. Other embodiments are contemplated.Type: ApplicationFiled: March 3, 2009Publication date: September 9, 2010Inventors: Paul D. Shirley, Hiroyuki Mori
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Patent number: 7737055Abstract: A semiconductor substrate undergoing processing to fabricate integrated circuit devices thereon is spun about a rotational axis while introducing liquid onto a surface of the substrate. An annular-shaped sheet of liquid is formed on the surface, the sheet of liquid having an inner diameter defining a liquid-free void. The size of a diameter of the void is reduced by manipulation of the annular-shaped sheet of liquid. The void may then be enlarged until the surface is substantially dry. The annular-shaped sheet of liquid may be formed and altered by selectively moving a contact area on the surface of the substrate on which the liquid is introduced. Systems for processing a substrate and configured to deposit and manipulate a sheet of liquid thereon are also disclosed.Type: GrantFiled: November 17, 2008Date of Patent: June 15, 2010Assignee: Micron Technology, Inc.Inventors: Paul D. Shirley, Hiroyuki Mori
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Publication number: 20090226847Abstract: Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.Type: ApplicationFiled: March 10, 2008Publication date: September 10, 2009Applicant: MICRON TECHNOLOGY, INC.Inventors: Yoshiki Hishiro, Lijing Gou, Scott E. Sills, Hiroyuki Mori, Paul D. Shirley, Troy V. Gugel, Adam L. Olson
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Publication number: 20090092933Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: ApplicationFiled: October 5, 2007Publication date: April 9, 2009Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Publication number: 20090068848Abstract: A semiconductor substrate undergoing processing to fabricate integrated circuit devices thereon is spun about a rotational axis while introducing liquid onto a surface of the substrate. An annular-shaped sheet of liquid is formed on the surface, the sheet of liquid having an inner diameter defining a liquid-free void. The size of a diameter of the void is reduced by manipulation of the annular-shaped sheet of liquid. The void may then be enlarged until the surface is substantially dry. The annular-shaped sheet of liquid may be formed and altered by selectively moving a contact area on the surface of the substrate on which the liquid is introduced. Systems for processing a substrate and configured to deposit and manipulate a sheet of liquid thereon are also disclosed.Type: ApplicationFiled: November 17, 2008Publication date: March 12, 2009Applicant: Micron Technology, Inc.Inventors: Paul D. Shirley, Hiroyuki Mori
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Patent number: 7470638Abstract: A semiconductor substrate undergoing processing to fabricate integrated circuit devices thereon is spun about a rotational axis while introducing liquid onto a surface of the substrate. An annular-shaped sheet of liquid is formed on the surface, the sheet of liquid having an inner diameter defining a liquid-free void. The size of a diameter of the void is reduced by manipulation of the annular-shaped sheet of liquid. The void may then be enlarged until the surface is substantially dry. The annular-shaped sheet of liquid may be formed and altered by selectively moving a contact area on the surface of the substrate on which the liquid is introduced. Systems for processing a substrate and configured to deposit and manipulate a sheet of liquid thereon are also disclosed.Type: GrantFiled: February 22, 2006Date of Patent: December 30, 2008Assignee: Micron Technology, Inc.Inventors: Paul D. Shirley, Hiroyuki Mori
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Patent number: 7370659Abstract: Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning device for removing contaminants from the workpiece support, and a stage carrying the workpiece support. The stage and/or cleaning device is movable to selectively position the workpiece support proximate to the cleaning device. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R. § 1.72(b).Type: GrantFiled: August 6, 2003Date of Patent: May 13, 2008Assignee: Micron Technology, Inc.Inventors: Craig A. Hickman, Paul D. Shirley
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Patent number: 7361234Abstract: Stepper and/or scanner machines including cleaning devices and methods for cleaning stepper and/or scanner machines are disclosed herein. In one embodiment, a stepper and/or scanner machine includes a housing, an illuminator, a lens, a workpiece support, a cleaning device for removing contaminants from the workpiece support, and a stage carrying the workpiece support. The stage and/or cleaning device is movable to selectively position the workpiece support proximate to the cleaning device. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 C.F.R. § 1.72(b).Type: GrantFiled: May 10, 2006Date of Patent: April 22, 2008Assignee: Micron Technology, Inc.Inventors: Craig A. Hickman, Paul D. Shirley
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Patent number: 6872254Abstract: A method and apparatus for forming a generally uniform liquid layer on a surface of an upper surface microelectronic substrate. The apparatus can include a support that engages less than the entire lower surface of the microelectronic substrate and rotates the microelectronic substrate at a selected rate. A barrier can extend over the upper surface of the microelectronic substrate and can rotate at about the same rate as the substrate to separate a rotating air mass adjacent to the upper surface and within the barrier from a stationary air mass external to the barrier. The rotating air mass can reduce the likelihood for liquid/air interface disturbances that create non-uniformities in the liquid layer. Accordingly, the method and apparatus can increase the range of thicknesses to which the liquid layer can be formed and can reduce the topographical non-uniformities of the liquid layer.Type: GrantFiled: June 9, 2003Date of Patent: March 29, 2005Assignee: Micron Technology, Inc.Inventor: Paul D. Shirley
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Patent number: 6830619Abstract: A method and apparatus for controlling a temperature of a microelectronic substrate. In one embodiment, the apparatus can include a substrate support configured to engage and support the microelectronic substrate. The apparatus can further include a temperature controller having one or more thermal links coupled directly with the substrate when the substrate is supported by the substrate support. The thermal links can maintain thermal contact with the substrate when the substrate is either stationary or mobile relative to the temperature controller. The temperature controller can heat or cool different portions of the substrate at different rates with one or more of several heat transfer devices, including liquid jets, gas jets, resistive electrical elements and/or thermoelectric elements.Type: GrantFiled: August 7, 2001Date of Patent: December 14, 2004Assignee: Micron Technology, Inc.Inventor: Paul D. Shirley
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Publication number: 20030211232Abstract: A method and apparatus for forming a generally uniform liquid layer on a surface of an upper surface microelectronic substrate. The apparatus can include a support that engages less than the entire lower surface of the microelectronic substrate and rotates the microelectronic substrate at a selected rate. A barrier can extend over the upper surface of the microelectronic substrate and can rotate at about the same rate as the substrate to separate a rotating air mass adjacent to the upper surface and within the barrier from a stationary air mass external to the barrier. The rotating air mass can reduce the likelihood for liquid/air interface disturbances that create non-uniformities in the liquid layer. Accordingly, the method and apparatus can increase the range of thicknesses to which the liquid layer can be formed and can reduce the topographical non-uniformities of the liquid layer.Type: ApplicationFiled: June 9, 2003Publication date: November 13, 2003Inventor: Paul D. Shirley
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Patent number: 6645703Abstract: The invention encompasses a method of forming photoresist on a semiconductor wafer. A wafer is coated with a first layer of photoresist to define a first photoresist-coated wafer. The first photoresist-coated wafer is placed on a temperature-regulated mass and thermally equilibrated to a temperature. Subsequently, the first photoresist-coated wafer is photo-processed. After the photo-processing, the wafer is coated with a second layer of photoresist to define a second photoresist-coated wafer. The second photoresist-coated wafer is placed on the temperature-regulated mass and thermally equilibrated to the same temperature that the first photoresist-coated wafer had been equilibrated to. Subsequently, the second layer of photoresist is photo-processed. The invention also encompasses a reticle forming method. A layer of masking material is formed over a reticle substrate, and the reticle substrate is then placed on a temperature-regulated mass.Type: GrantFiled: June 27, 2001Date of Patent: November 11, 2003Assignee: Micron Technology, Inc.Inventors: Ziad R. Hatab, Paul D. Shirley, Tony C. Krauth