Patents by Inventor Paul Damian Franzon

Paul Damian Franzon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stacked memory device with redundant resources to correct defects
    Patent number: 8982598
    Abstract: A memory device includes a stack of circuit layers, each circuit layer having formed thereon a memory circuit configured to store data and a redundant resources circuit configured to provide redundant circuitry to correct defective circuitry on at least one memory circuit formed on at least one layer in the stack. The redundant resources circuit includes a partial bank of redundant memory cells, wherein an aggregation of the partial bank of redundant memory cells in each of the circuit layers of the stack includes at least one full bank of redundant memory cells and wherein the redundant resources circuit is configured to replace at least one defective bank of memory cells formed on any of the circuit layers in the stack with at least a portion of the partial bank of redundant memory cells formed on any of the circuit layers in the stack.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: March 17, 2015
    Assignee: Rambus Inc.
    Inventors: Paul Damian Franzon, Evan Lawrence Erickson, Thomas Vogelsang, Frederick A. Ware
  • STACKED MEMORY DEVICE WITH REDUNDANT RESOURCES TO CORRECT DEFECTS
    Publication number: 20130279280
    Abstract: A memory device includes a stack of circuit layers, each circuit layer having formed thereon a memory circuit configured to store data and a redundant resources circuit configured to provide redundant circuitry to correct defective circuitry on at least one memory circuit formed on at least one layer in the stack. The redundant resources circuit includes a partial bank of redundant memory cells, wherein an aggregation of the partial bank of redundant memory cells in each of the circuit layers of the stack includes at least one full bank of redundant memory cells and wherein the redundant resources circuit is configured to replace at least one defective bank of memory cells formed on any of the circuit layers in the stack with at least a portion of the partial bank of redundant memory cells formed on any of the circuit layers in the stack.
    Type: Application
    Filed: April 17, 2013
    Publication date: October 24, 2013
    Applicant: Rambus Inc.
    Inventors: Paul Damian Franzon, Evan Lawrence Erickson, Thomas Vogelsang, Frederick A. Ware