Abstract: A LIDAR system or the like uses a star coupler to distribute an input light beam over a steerable array. The input light beam is injected through an input signal waveguide on the input side of the star coupler. The light returning after reflecting from external objects is directed back through the star coupler to one or more waveguides on the input side. Return light is detected in one or more waveguides on the input side that are displaced from the input signal waveguide. In embodiments, the beam direction of the steerable array changes during the round-trip transit time of the returning light. This causes the returning light to arrive off-axis, which in turn causes it to couple into one or more of the displaced input-side waveguides instead of coupling back into the input signal waveguide.

Abstract: An apparatus is provided for nanoantenna-enhanced detection of infrared radiation. The apparatus includes one or more detector pixels. A plurality of detector pixels can constitute a focal plane array (FPA). Each detector pixel carries at least a first and a second subpattern of nanoantenna elements, with elements of the second subpattern interpolated between elements of the first subpattern. Each detector pixel also includes separate collection electrodes for collecting photogenerated current from the respective subpatterns.

Abstract: A rectenna is used for full-wave rectification of infrared radiation to produce electricity. In the rectenna, a metallic grating overlies a semiconductor body. A tunnel barrier is interposed between each grating element and the semiconductor body. Each of the grating elements overlies a bridge pair consisting of a region of n+-doped semiconductor and a region of p+-doped semiconductor, both of which are embedded in more lightly doped host semiconductor material. Each of the two regions that compose the bridge pair forms a rectifying tunnel junction through a tunnel barrier to at least one overlying grating element. Each of the two regions also forms a semiconductor junction with the host semiconductor material.

Abstract: An actively tunable optical filter can control the amplitude of reflected infrared light. The filter exploits the dependence of the excitation energy of plasmons in a continuous and unpatterned sheet of graphene, on the Fermi-level, which can be controlled by conventional electrostatic gating. An exemplary filter enables simultaneous modification of two distinct spectral bands whose positions are dictated by the device geometry and graphene plasmon dispersion. Within these bands, the reflected amplitude can be varied by over 15% and resonance positions can be shifted by over 90 cm?1. Electromagnetic simulations verify that tuning arises through coupling of incident light to graphene plasmons by a nanoantenna grating structure. Importantly, the tunable range is determined by a combination of graphene properties, device structure, and the surrounding dielectrics, which dictate the plasmon dispersion. Thus, the underlying design is applicable across a broad range of infrared frequencies.

Abstract: An actively tunable optical filter can control the amplitude of reflected infrared light. The filter exploits the dependence of the excitation energy of plasmons in a continuous and unpatterned sheet of graphene, on the Fermi-level,which can be controlled by conventional electrostatic gating. An exemplary filter enables simultaneous modification of two distinct spectral bands whose positions are dictated by the device geometry and graphene plasmon dispersion. Within these bands, the reflected amplitude can be varied by over 15% and resonance positions can be shifted by over 90 cm?1. Electromagnetic simulations verify that tuning arises through coupling of incident light to graphene plasmons by a nanoantenna grating structure. Importantly, the tunable range is determined by a combination of graphene properties, device structure, and the surrounding dielectrics, which dictate the plasmon dispersion. Thus, the underlying design is applicable across a broad range of infrared frequencies.

Abstract: Various technologies for performing discrete-variable (DV) quantum key distribution (QKD) with integrated electro-optical circuits are described herein. An integrated DV-QKD system uses Mach-Zehnder modulators (MZMs) to modulate a polarization of photons at a transmitter and select a photon polarization measurement basis at a receiver. A transmitter of a DV-QKD system further uses phase shifters to correct for non-idealities of the MZM in output provided to a polarization beam splitter. A receiver of a DV-QKD system can use phase shifters between a polarization beam splitter and an MZM to correct for non-idealities of the polarization beam splitter and the MZM on the receiver side.

Abstract: Various technologies for performing continuous-variable (CV) and discrete-variable (DV) quantum key distribution (QKD) with integrated electro-optical circuits are described herein. An integrated DV-QKD system uses Mach-Zehnder modulators to modulate a polarization of photons at a transmitter and select a photon polarization measurement basis at a receiver. An integrated CV-QKD system uses wavelength division multiplexing to send and receive amplitude-modulated and phase-modulated optical signals with a local oscillator signal while maintaining phase coherence between the modulated signals and the local oscillator signal.

Abstract: An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

Abstract: A beam-steering optical transceiver is provided. The transceiver includes one or more modules, each comprising an antenna chip and a control chip bonded to the antenna chip. Each antenna chip has a feeder waveguide, a plurality of row waveguides that tap off from the feeder waveguide, and a plurality of metallic nanoantenna elements arranged in a two-dimensional array of rows and columns such that each row overlies one of the row waveguides. Each antenna chip also includes a plurality of independently addressable thermo-optical phase shifters, each configured to produce a thermo-optical phase shift in a respective row. Each antenna chip also has, for each row, a row-wise heating circuit configured to produce a respective thermo-optic phase shift at each nanoantenna element along its row. The control chip includes controllable current sources for the independently addressable thermo-optical phase shifters and the row-wise heating circuits.

Abstract: Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Abstract: Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Abstract: Avalanche photodiodes (APDs) and single photon avalanche detectors (SPADs) are provided with a lateral multiplication region that provides improved amplification through increased impact ionization.

Abstract: An interdigitated nanoelectrode grating functions both as an absorption-enhancing sub-wavelength antenna and to minimize the distance between electron-hole creation and current collection so as to enhance photodetection schemes based upon active layers comprising two-dimensional semiconducting materials.

Abstract: The integration of bilayer graphene with an absorption enhancing sub-wavelength antenna provides an infrared photodetector capable of real-time spectral tuning without filters at nanosecond timescales.

Abstract: An optical beam-steering apparatus is provided. The apparatus includes one or more optical waveguides and at least one row of metallic nanoantenna elements overlying and electromagnetically coupled to a respective waveguide. In each such row, individual nanoantenna elements are spaced apart along an optical propagation axis of the waveguide so that there is an optical propagation phase delay between successive pairs of nanoantenna elements along the row. The apparatus also includes a respective single electric heating element in thermal contact with each of the waveguides. Each heating element is arranged to heat, substantially uniformly, at least that portion of its waveguide that directly underlies the corresponding row of nanoantenna elements.

Abstract: A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (˜64%) at large incidence angles.

Abstract: A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure.

Abstract: Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.

Abstract: An exemplary embodiment of the present invention is a photodetector comprising a semiconductor body, a periodically patterned metal nanoantenna disposed on a surface of the semiconductor body, and at least one electrode separate from the nanoantenna. The semiconductor body comprises an active layer in sufficient proximity to the nanoantenna for plasmonic coupling thereto. The nanoantenna is dimensioned to absorb electromagnetic radiation in at least some wavelengths not more than 12 ?m that are effective for plasmonic coupling into the active layer. The electrode is part of an electrode arrangement for obtaining a photovoltage or photocurrent in operation under appropriate stimulation.

Abstract: A photovoltaic system described herein includes a first group of photovoltaic modules that comprises a first plurality of microsystem enabled photovoltaic modules. A second group of photovoltaic modules comprises a second plurality of microsystem enabled photovoltaic modules, wherein the first group of photovoltaic modules are electrically connected in parallel to the second group of photovoltaic modules.