Abstract: An electronic thermally-initiated venting system (ETIVS) for rocket motors includes at least one linear-shaped charge attached to a rocket motor housing. At least one exploding foil initiator (EFI) is attached to the linear-shaped charge. At least one electronic thermally-initiated venting system circuit is electrically-connected to the EFI. The EFI is configured to auto-fire when the electronic thermally-initiated venting system circuit relays a current pulse through the EFI. The linear-shaped charge is configured to initiate when the current pulse is relayed through the EFI.

Abstract: Embodiments relate to fuze setback validation. An electronic setback validator for a launched munition safe-arm fuze includes a transient voltage suppressor. A piezoceramic element is electrically-connected to the transient voltage suppressor. A first electronic circuit is electrically-connected to the piezoceramic element and is a constant 1 milliamp discharge circuit. The first electronic circuit is configured to determine setback magnitude of acceleration. A second electronic circuit is electrically-connected to the piezoceramic element. The second electronic circuit is a constant 122 microamp charge circuit and is configured to determine setback duration of acceleration. A microcontroller is electrically-connected to the first and second electronic circuits.

Abstract: An insensitive crystalline high explosive molding powder, usable as a booster HE. The subject insensitive crystalline high explosive molding powder being manufactured by adding the crystalline high explosive, metal or semi-metal particles and a polymer or wax based binder to a solvent to form a solution, spray drying the solution to drive off the solvent, thereby co-precipitating the HE and binder to form granules in which the crystals of HE and metal particles are uniformly distributed in the binder.

Abstract: Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one embodiment, one such process includes providing an insulator, removing a portion of the insulator to form a trench within the insulator, depositing a carbon material on first portions of the insulator using a physical vapor deposition process, disposing at least one ferromagnetic material on second portions of the insulator to form a pole including a portion of the ferromagnetic material within the trench, and performing a chemical mechanical planarization on the at least one ferromagnetic material using at least a portion of the carbon material as a stop for the chemical mechanical planarization.

Abstract: A device for retrieving a subsea tubular comprises a housing. In addition, the device comprises a receiving body slidingly disposed within the housing. The body has a central axis, a lower end, and a receptacle extending from the lower end. Further, the device comprises an actuation member configured to move the housing axially relative to the body. Still further, the device comprises a plurality of cam members. Each cam member is rotatably coupled to the lower end of the body and has a cam head extending radially into the receptacle and a lever arm extending from the cam head. Each cam member is configured to rotate in a first direction to move the cam head radially inward and rotate in a second direction to move the cam head radially outward. Moreover, the device comprises a plurality of biasing members configured to bias the cam members in the first direction.

Abstract: Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

Abstract: A method of in-situ remediation of chlorinated and fluorinated reaction by-products resulting from energetic detonations and/or burning of energetic mixtures comprising adding a quantity of Calcium disilicide (CaSi2), Calcium silicide (CaSi), Magnesium disilicide (MgSi2), Magnesium silicide, or Aluminum Calcium (Al2Ca) compounds to the energetic mixture prior to its detonation and/or burning. Advantageously, the in-situ production of more inert by-products results from this addition thereby preventing the formation of any less-desirable by-products.

Abstract: Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

Abstract: A device for retrieving a subsea tubular comprises a housing. In addition, the device comprises a receiving body slidingly disposed within the housing. The body has a central axis, a lower end, and a receptacle extending from the lower end. Further, the device comprises an actuation member configured to move the housing axially relative to the body. Still further, the device comprises a plurality of cam members. Each cam member is rotatably coupled to the lower end of the body and has a cam head extending radially into the receptacle and a lever arm extending from the cam head. Each cam member is configured to rotate in a first direction to move the cam head radially inward and rotate in a second direction to move the cam head radially outward. Moreover, the device comprises a plurality of biasing members configured to bias the cam members in the first direction.

Abstract: Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

Abstract: Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

Abstract: A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.

Abstract: Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one embodiment, one such process includes providing an insulator, removing a portion of the insulator to form a trench within the insulator, depositing a carbon material on first portions of the insulator using a physical vapor deposition process, disposing at least one ferromagnetic material on second portions of the insulator to form a pole including a portion of the ferromagnetic material within the trench, and performing a chemical mechanical planarization on the at least one ferromagnetic material using at least a portion of the carbon material as a stop for the chemical mechanical planarization.

Abstract: Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

Abstract: Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.

Abstract: Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

Abstract: Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

Abstract: A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C.

Abstract: Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

Abstract: A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.