Abstract: An electrostatically controlled, micromachined micromechanical capacitor having an adjustable, extensive tuning range. A configuration consists of a set of various sized beams or plates adjacent to a common plate or plates. The pairs of plates are linearly moved relative to each other to provide an adjustable capacitance. The movement of the plates is caused electrostatically by an application of a DC or low frequency voltage to the respective plates. The signals that are processed by these micromechanical capacitors are typically in the megahertz range and higher. The process for micromachining the micromechanical capacitor is similar to the process utilized in integrated circuit fabrication.

Abstract: A microstructure device having a array of deep lamellar structures resembling parallel plates has sharp high pass cut-off behavior associated with incident TE polarized radiation. When two such microstructures are disposed in an orthogonal orientation, they act like a 2-D array of rectangular waveguides with the cut-off behavior determined by the separation of the respective parallel plates. Another embodiment of the present invention employs a linear drive to articulate the array of coupled parallel plates to tune the filter to the operative incident radiation relatively independent of the angle of incidence. The microstructure finds application placed proximate the focal plane of an array of radiation sensitive material so that very high resolution multispectral images may be generated.

Abstract: A mixer includes a local oscillator (LO) matching network having an LO input port, an RF matching network also having an input port and an IF filter which provides an IF output from the mixer. A FET having a gate, drain and source operates at the center of the mixer. A resonant loop is connected between the drain and gate of the FET. The gate of the FET is connected to an output of the LO matching network. The drain of the FET is connected to an output of the RF matching network. The source of the FET is connected to an input of the IF filter. The resonant loop may incorporate a DC blocking capacitor which does not function as part of the resonant loop, but which serves to block DC allowing the drain and gate of the FET to be biased independently.

Abstract: An improved internally matched Schottky barrier beam lead diode for use in millimeter wave frequency circuits. In this diode device which is made on a chip, a reactive shunt loop comprising a matching inductor and series connected capacitor is fabricated on the chip adjacent the diode and couples the ohmic beam lead to the Schottky contact beam lead.